STB6 Search Results

b01619

Abstract: D6NM60N
Contextual Info: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N

STB60NE06L-16

Contextual Info: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY

stp6nc60fp

Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY

STB60NF03L

Contextual Info: STB60NF03L N-CHANNEL 30V - 0.008Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF03L • ■ VDSS RDS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

STB6NA80

Contextual Info: STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA80 800 V < 1.9 Ω 5.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

b60nf06

Abstract: B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368
Contextual Info: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

STB6LNC60

Contextual Info: STB6LNC60 N-CHANNEL 600V - 1Ω - 5.8A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB6LNC60 600 V < 1.25 Ω 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

B60NE06L

Abstract: B60NE06L-16 b60ne
Contextual Info: STB60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST B60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY

Contextual Info: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STB60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T B 6 0 N E 0 6 L -1 6 60 V < 0 .0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

Contextual Info: STB60NF03L N-CHANNEL 30V - 0.008 Q. - 60A D2PAK _ STripFET POWER MOSFET PRELIMINARY DATA TYP E S TB60N F03L V d ss R dS oii Id 30 V < 0.01 Q. 60 A • TYPICAL R D S (on) = 0.008 . OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS . LOW THRESHOLD DRIVE

Contextual Info: SGS-THOMSON ÍIJCTIMfflO STB60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STB60N06-14 dss 60 V Id R D S o n < 0.014 n 60 A TYPICAL R DS(on) =0.012 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

STB6000

Abstract: stv0299 application STV0299 QFN-32 bpsk QFN32Pin ST omega
Contextual Info: STB6000 QPSK DVB/DIRECTVTM direct conversion tuner IC DATA BRIEF Description satellite front end that can seamlessly interface to ST’s OMEGA range of set-top box decoders. Packaged in a small QFN 32-pin package, it is ideal for low cost DBS design. The STB6000 ASIC is a highly integrated, low

STB6NB50

Abstract: DSASW003744 58AR
Contextual Info: STB6NB50 N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAK PowerMESH MOSFET TYPE V DSS R DS on ID STB6NB50 500 V < 1.5 Ω 5.8 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STB60NE03L-12

Contextual Info: STB60NE03L-12 N-CHANNEL 30V - 0.009 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS R DS on ID STB60NE03L-12 30 V <0.012 Ω 60 A TYPICAL RDS(on) = 0.009 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

6NC60

Abstract: STP6NC60 welding smps schematic N-Channel mosfet 600v 36A stp6nc60fp equivalent STB6NC60-1 STP6NC60FP
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY

STB6NA60

Contextual Info: STB6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA60 600 V < 1.2 Ω 6.5 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

6NC60

Abstract: STP6NC60 STP6NC60FP stp6nc60fp equivalent STB6NC60-1
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

b60ne

Abstract: B60NE06L STB60NE06L-16T4 B60NE06
Contextual Info: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature

p6nk90zfp

Abstract: p6nk90z p6nk90 B6NK90Z STP6NK90ZFP p6nk90zf b6nk90 p6nk STP6NK90Z B6NK9
Contextual Info: STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z • ■ ■ ■ ■ ■ V DSS R DS on ID Pw 900 V 900 V 900 V <2Ω <2Ω <2Ω 5.8 A 5.8 A

STP6NC60

Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: SANGDEST MICROELECTRONICS STB60100C-A Technical Data Data Sheet N1620, Rev. - Green Products STB60100C-A SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •

B60NE06L

Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
Contextual Info: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature

STP6NC60

Abstract: 6NC60 STB6NC60-1 STP6NC60FP
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY