STB30N Search Results

Contextual Info: ¿7/ STB30N10 N - CHANNEL 100V - 0.06Î2 - 30A - D2PAK POWER MOS TRANSISTOR TYPE V STB30N10 d ss 100 V R d S o ii < 0 .0 7 a Id 30 A TYPICAL R D S (on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

STB30NE06L

Contextual Info: STB30NE06L N-CHANNEL 60V - 0.035 Ω - 30A D 2PAK STripFET POWER MOSFET TYPE STB30NE06L VDSS RDS on ID 60 V <0.05 Ω 30 A TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT

Contextual Info: STB30NS15 N-CHANNEL 150V - 0.075 Ω - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB30NS15 150 V <0.1 Ω 30 A TYPICAL RDS(on) = 0.075 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

CT-1004

Abstract: D4808
Contextual Info: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω

STP30NF10

Abstract: STP30NF10FP STB30NF10
Contextual Info: STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.045 Ω <0.045 Ω <0.045 Ω 35 A

STB30NE06L

Contextual Info: STB30NE06L N-CHANNEL 60V - 0.035 Ω - 30A D 2PAK STripFET POWER MOSFET TYPE STB30NE06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.05 Ω 30 A TYPICAL RDS(on) = 0.035Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION

STB30NS15

Contextual Info: STB30NS15 N-CHANNEL 150V - 0.075 Ω - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB30NS15 150 V <0.1 Ω 30 A TYPICAL RDS(on) = 0.075 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

F30NM60ND

Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Contextual Info: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND

Contextual Info: STB30NS15 N-CHANNEL 150V - 0.075 Ω - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB30NS15 150 V <0.01 Ω 30 A TYPICAL RDS(on) = 0.075 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STB30NF20L N-channel 200 V, 0.065 Ω, 30 A STripFET Power MOSFET in D2PAK package Datasheet — production data Features Order code VDSS RDS on ID PTOT STB30NF20L 200 V 0.075 Ω 30 A 150 W TAB • Gate charge minimized ■ 100% avalanche tested ■ Excellent figure of merit (RDS* Qg)

STW30NM50N

Abstract: 30NM50N STP30NM50N STB30NM50N STF30NM50N STI30NM50N
Contextual Info: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω

STB30NS15

Contextual Info: STB30NS15 N-CHANNEL 150V - 0.075 Ω - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB30NS15 150 V <0.1 Ω 30 A TYPICAL RDS(on) = 0.075 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

STB30N10

Abstract: airbag
Contextual Info: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 VDSS RDS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

DD 127 D TRANSISTOR

Abstract: STB30N10 transistor DD 127 D
Contextual Info: STB30N10 N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB30N10 100 V < 0.07 Ω 30 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STB30NE06L

Contextual Info: STB30NE06L  N - CHANNEL 60V - 0.35Ω - 30A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB30NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.05 Ω 30 A TYPICAL RDS(on) = 0.035 Ω 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED

Contextual Info: STB30NF10 N-CHANNEL 100V - 0.052Ω - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STB30NF10 100 V < 0.060 Ω 30 A TYPICAL RDS(on) = 0.052Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION

30NM60ND

Abstract: STP30NM60ND JESD97 STB30NM60ND STF30NM60ND STI30NM60ND STW30NM60ND T150 30nm60 01125A
Contextual Info: STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh II Power MOSFET with fast diode TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ max Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 650 V RDS(on) max ID 0.13 Ω 25 A 25 A 25 A(1)

Contextual Info: STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh II Power MOSFET with fast diode TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ max Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 650 V RDS(on) max ID 0.13 Ω 25 A 25 A 25 A(1)

30nm60

Abstract: 30nm60n STP30NM60N JESD97 STB30NM60N STF30NM60N STI30NM60N STW30NM60N T150 STW30NM60
Contextual Info: STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 Ω, 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features Type VDSS @ TJmax RDS on max ID PW STB30NM60N 650 V <0.13Ω 25A 190 W STI30NM60N 650 V <0.13Ω

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

30nm60

Abstract: 30nm60n equivalent M 393 STF30 30NM6
Contextual Info: STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 Ω, 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features Type VDSS @ TJmax RDS on max ID PW STB30NM60N 650 V <0.13Ω 25A 190 W STI30NM60N 650 V <0.13Ω

30nm60

Abstract: 30nm60n
Contextual Info: STB30NM60N-STI30NM60N-STF30NM60N STP30NM60N-STW30NM60N N-channel 600V - 0.1Ω - 25A - TO-220/FP - TO-247 - D2/I2PAK second generation MDmesh Power MOSFET Preliminary Data Features Type VDSS RDS on Max ID PW STB30NM60N 600 V <0.13Ω 25A 190 W STI30NM60N

STP30NF10FP

Abstract: STB30NF10 STP30NF10 diode 400A
Contextual Info: STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.045 Ω <0.045 Ω <0.045 Ω 35 A

Contextual Info: STB30NE06L N - CHANNEL 60V - 0.35H - 30A - D^PAK _STripFET POWER MOSFET PRELIMINARY DATA TYPE STB30N E06L V dss R dS oii Id 60 V < 0.05 Q. 30 A . • TYPICAL R D S (on) = 0.035 100% AVALANCHE TESTED . LOW GATE CHARGE 100 °C . APPLICATION ORIENTED