STB11 Search Results

P11NM60AFP

Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
Contextual Info: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω

11NM60

Abstract: STP11NM60FP STB11NM60 STB11NM60-1 STP11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS RDS on 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω

p11nm60fdfp

Abstract: equivalent to220 p11nm60fd STB11NM60FD-1 STP11NM60FD STP11NM60FDFP ZVS phase-shift converters MOSFET 400V TO-220
Contextual Info: STP11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V - 0.40Ω - 11A TO-220 / TO-220FP/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD-1 VDSS RDS(on) ID 600 V 600 V 600 V < 0.45Ω < 0.45Ω < 0.45Ω 11 A 11 A

p11nk50zfp

Abstract: P11NK50Z P11NK50 B11NK50Z STP11NK50ZFP STB11NK50Z STB11NK50ZT4 STP11NK50Z
Contextual Info: STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STB11NK50Z STP11NK50Z STP11NK50ZFP • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.52 Ω < 0.52 Ω

10003 NPN

Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Contextual Info: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

STB1132

Abstract: STD1664
Contextual Info: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664

8002 amplifier

Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
Contextual Info: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766

STD1664

Abstract: Transistor STB1132 a2 sot-89
Contextual Info: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

11N65M5

Abstract: 11n65 STB11N65M5
Contextual Info: STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB Order codes VDSS @ TJmax RDS on max 2

f11nm80

Abstract: p11nm80 W11nm80 ST 9241 9241 B11nm80 marking code STB S 9241 STP11NM80 STB11NM80
Contextual Info: STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features Type VDSS RDS on max RDS(on)*Qg ID 3 STB11NM80 1 3 2 D²PAK 1 STF11NM80 800 V STP11NM80 < 0.40 Ω 14Ω*nC TO-247 11 A

P11NM60AFP

Abstract: p11nm60 b11nm60 p11nm6 p11nm60a STP11NM60A b11nm6 B11NM60A STB11NM60A-1 STP11NM60AFP
Contextual Info: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω

11NM60

Abstract: STP11NM60FP b11nm60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET PRELIMINARY DATA TYPE STP11NM60 STP11NM60FP STB11NM60-1 n n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω

Contextual Info: STP11NM60 STB11NM60-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/I2PAK MDmesh Power MOSFET PRELIMINARY DATA TYPE STP11NM60 STB11NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V <0.45Ω <0.45Ω 11 A 11 A TYPICAL RDS(on) = 0.4Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

STF11NM65

Abstract: p11nm6
Contextual Info: STB11NM65N-1 - STF11NM65N STP11NM65N - STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB11NM65N-1 710V < 0.38Ω 12A STF11NM65N 710V < 0.38Ω 12A(1) STP11NM65N

Contextual Info: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A

SOT89 MARKING CODE B2

Abstract: STD1766 STB1188
Contextual Info: ㅇ STD1766 NPN Silicon Transistor Descriptions • Medium power amplifier PIN Connection Features • PC Collector power dissipation =2W (Ceramic substrate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

F11NM80

Abstract: p11nm80 3L4-9 B11NM80 STF11NM80 W11nm80 STW11NM80 STB11NM80 STP11NM80 STB11NM80T4
Contextual Info: STP11NM80 - STF11NM80 STB11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247 MDmesh MOSFET Table 1: General Features TYPE STP11NM80 STF11NM80 STB11NM80 STW11NM80 • ■ ■ ■ Figure 1: Package VDSS RDS on 800 800 800 800 < <

f11nm60n

Abstract: STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11nm60
Contextual Info: STD11NM60N-1 - STB11NM60N-1 STD11NM60N-STP11NM60N-STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET Features VDSS @TJmax RDS(on) STB11NM60N-1 650 V < 0.45 Ω 10 A STD11NM60N 650 V < 0.45 Ω 10 A

smd marking code r54

Abstract: R54M CM 8517 STB1106R54MZF SMD MARKING CODE 318
Contextual Info: SHIELDED SMD POWER INDUCTORS STB1106 SERIES 1. PART NO. EXPRESSION : STB1106R54MZF a (b) (c) (d)(e)(f) (a) Series code (d) Tolerance code : M = ±20% (b) Dimension code (e) X, Y, Z : Standard part (c) Inductance code : R54 = 0.54uH (f) F : Lead Free H 2. CONFIGURATION & DIMENSIONS :

P11NK40ZFP

Abstract: P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97
Contextual Info: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP

p11nk50

Abstract: p11nk50zfp P11NK50Z B11NK50Z isd10 equivalent JESD97 STB11NK50Z STB11NK50ZT4 STP11NK50Z STP11NK50ZFP
Contextual Info: STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on max ID Pw STB11NK50Z 500 V < 0.52 Ω 10 A 125 W STP11NK50ZFP 500 V < 0.52 Ω 10 A 30 W STP11NK50Z

Contextual Info: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766

Contextual Info: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

STB11NB40

Contextual Info: STB11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STB11NB40 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10.7 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED