STB1 Search Results

STP13NM60

Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Contextual Info: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N

P11NM60AFP

Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
Contextual Info: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

STB18N20

Abstract: isd 2100
Contextual Info: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STP12NM50FP

Abstract: STP12NM50 12NM50 STB12NM50 STB12NM50-1
Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP12NM50/FP STB12NM50 STB12NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.35Ω <0.35Ω <0.35Ω 12 A 12 A 12 A

ISD 1720

Abstract: STB160NF03L
Contextual Info: STB160NF03L N-CHANNEL 30V - 0.0021Ω - 160A D2PAK STripFET POWER MOSFET TYPE STB160NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.0030 Ω 160 A TYPICAL RDS(on) = 0.0021Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE VERY LOW GATE CHARGE 100% AVALANCHE TESTED

11NM60

Abstract: STP11NM60FP STB11NM60 STB11NM60-1 STP11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS RDS on 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω

STP14NF10FP

Abstract: STB14NF10 STP14NF10
Contextual Info: STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB14NF10 STP14NF10 STP14NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.13 Ω <0.13 Ω <0.13 Ω 15 A

STB1277

Abstract: STB1277Y
Contextual Info: STB1277 -2A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity

STB16NS25

Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™

STB100NF04L

Contextual Info: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of

STB16NF06L

Contextual Info: STB16NF06L N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET POWER MOSFET TYPE STB16NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.09 Ω 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)

STB10NB50

Contextual Info: STB10NB50 N-CHANNEL 500V - 0.55Ω - 10.6A D²PAK PowerMesh MOSFET TYPE VDSS RDS on ID STB10NB50 500 V < 0.60 Ω 10.6 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

P130NS04ZB

Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
Contextual Info: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A

p11nm60fdfp

Abstract: equivalent to220 p11nm60fd STB11NM60FD-1 STP11NM60FD STP11NM60FDFP ZVS phase-shift converters MOSFET 400V TO-220
Contextual Info: STP11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V - 0.40Ω - 11A TO-220 / TO-220FP/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD-1 VDSS RDS(on) ID 600 V 600 V 600 V < 0.45Ω < 0.45Ω < 0.45Ω 11 A 11 A

ISD 1720

Abstract: STB100NF03L-03-1
Contextual Info: STB100NF03L-03-1 N-CHANNEL 30V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION

p11nk50zfp

Abstract: P11NK50Z P11NK50 B11NK50Z STP11NK50ZFP STB11NK50Z STB11NK50ZT4 STP11NK50Z
Contextual Info: STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STB11NK50Z STP11NK50Z STP11NK50ZFP • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.52 Ω < 0.52 Ω

ST160NF3LL

Abstract: STB160NF3LL ISD 1720
Contextual Info: STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE

10003 NPN

Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Contextual Info: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

STB1277

Abstract: Transistor TRANSISTOR stb1277 STD1862
Contextual Info: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92

STB1132

Abstract: STD1664
Contextual Info: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664

8002 amplifier

Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
Contextual Info: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766

STD1664

Abstract: Transistor STB1132 a2 sot-89
Contextual Info: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132

1313L1

Abstract: STD17N25 STF17N25
Contextual Info: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω