STATIC RAM WITH DATA RETENTION Search Results

48Z02

Abstract: 232268 "lithium battery pack" pinout
Contextual Info: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data

48Z02

Abstract: "lithium battery pack" pinout
Contextual Info: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data

EDI8F81025C100B6C

Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
Contextual Info: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is

L6116PC85

Abstract: L6116NC35 L6116PC35 cy6116 L6116PC45 IDT6116 L6116NC85 L6116PC20
Contextual Info: L6116 2K x 8 Static RAM Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data In and Data Out signals share I/O

L7C185NC85

Abstract: l7c185uc85 L7C185NC45 ma 8630 IDT7164 L7C185PC20 L7C185PC25 L7C185PC45 L7C185PC85 L7C185NC35
Contextual Info: L7C185 8K x 8 Static RAM Features Description □ 8K by 8 Static RAM with chip select powerdown, output enable The L7C185 is a high-performance, low-power CMOS static RAM. The storage circuitry is organized as 8,192 words by 8 bits per word. The 8 Data In and Data Out signals share I/O

PCF8570CP

Abstract: PCF8570CT
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with

ic software program pcf8583

Abstract: PCF8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8583 Clock Calendar with 256 x 8-bit Static RAM Product specification File under Integrated Circuits, IC01 October 1991 Philips Semiconductors Product specification Clock Calendar with 256 x 8-bit Static RAM PCF8583 FEATURES

Contextual Info: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data

PCF8570P

Abstract: PCF8570 PCF8570T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with

Contextual Info: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and

9398 393 40011

Abstract: PCF8570T P80CLXXX PCF8570 PCF8570P
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with

P80CLXXX

Abstract: PCF8570 PCF8570P PCF8570T MBA605
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with

LCC 18 Pin Package

Abstract: LCC 16 Pin Package E12M
Contextual Info: ma EDI8464C Electronic DeilQns Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C is a high performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.

Contextual Info: INTEGRATED CIRCUITS DAT PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with

7C13

Abstract: UT7C138 UT7C139 4Kx8 Dual-Port Static RAM 7L Marking
Contextual Info: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM

5962F1123501QXA

Abstract: SECDED CYPT1049DV33-12FZMB
Contextual Info: CYRS1049DV33 4-Mbit 512 K x 8 Static RAM with RadStop Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance • Radiation Data Features characteristics in a 36-pin ceramic flat package ■ Total dose 300 Krad

a7r smd

Abstract: smd marking A4L smd a4l A1L smd
Contextual Info: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM

dualport

Abstract: smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
Contextual Info: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM

Contextual Info: ^E D I _ EDI8464C Etoctionte P w lqn» Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C isahigh performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.

MS621000-10FC

Abstract: MS621000-80FC MS621000-80PC MS621000L-80PC P322
Contextual Info: MOSEL MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.

DS1213C

Abstract: DS1213B
Contextual Info: DS1213C SmartSocket 256k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection

8822 TRANSISTOR

Abstract: U62H256A ZMD AG ZMDU62H256ASK
Contextual Info: U62H256A Automotive Fast 32K x 8 SRAM Features Description ! 32768 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and ! ! ! ! ! ! ! ! ! ! The U62H256A is a static RAM manufactured using a CMOS process technology with the following

smartsocket

Contextual Info: DS1213C SmartSocket 256k www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection

Contextual Info: MOSEL _MS621000 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power ADVANCE INFORMATION FEATURES DESCRIPTION • Available in 80/100/120 ns (Max.) The MOSEL MS621000 is a high performance, low power CMOS static RAM organized as 131,072 words by 8 bits.