ST BD140 Search Results

BD135-BD137-BD139

Abstract: bd139 BD139 amplifier BD139I st BD139 BD135,BD137,BD139 BD135 Toshiba Bd135 st BD137 toshiba
Contextual Info: "st, TOSHIBA {DISCRETE/OPTO} SILICON NPN EPITA X IA L TYPE PCT PROCESS 9097250 TO SH IBA DÊj| TOTVSSD OQOÖObfl S B D 1 3 7 BD 139I 5ôC (D ISCR ETE/O PTO ) 08Û68 o r- MEDIUM POWER AMPLIFIER APPLICATIONS. 3 3 ~ û 5j Unit in mm 7.9 MAX, FEATURES: . Designed for Complementary Use with BD136, BD138

BD135 CURVES

Abstract: BD140 application circuits circuits BD139 BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140
Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed

BD139

Abstract: BD139-10 bd140-10
Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed

S40S

Abstract: oms 450 RD51P 104 csk RD47E RD47F RD47M RD47P RD51F RD51FM
Contextual Info: — Vz A M RD47E RD47F RD47FM RD47M RD47P RD51E RD51F RD51FM RD51P RD56E RD56F RD56P RD62E RD62F RD62P RD68E RD68F RD68P RD75E RD75F RD75P RD82E R D82F RD82P R D91S RD91P RD100E RDIOOP RD110E RD110P RD12GE RD120P RD130E BD140E RD150E RD160E RD170E RD180E

104 csk

Abstract: oms 450 RD51P 40nsT RD47E RD47F RD47M RD47P RD51F RD51FM
Contextual Info: — Vz A M RD47E RD47F RD47FM RD47M RD47P RD51E RD51F RD51FM RD51P RD56E RD56F RD56P RD62E RD62F RD62P RD68E RD68F RD68P RD75E RD75F RD75P RD82E R D82F RD82P R D91S RD91P RD100E RDIOOP RD110E RD110P RD12GE RD120P RD130E BD140E RD150E RD160E RD170E RD180E

oms 450

Abstract: IC LA 40102 104 csk RD47E RD47F RD47M RD47P RD51F RD51FM RD51P
Contextual Info: — A M RD47E RD47F RD47FM RD47M RD47P RD51E RD51F RD51FM RD51P RD56E RD56F RD56P RD62E RD62F RD62P RD68E RD68F RD68P RD75E RD75F RD75P RD82E RD82F RD82P RD91S RD91P RD100E RDIOOP RD110E RD110P RD12GE RD120P RD130E BD140E RD150E RD160E RD170E RD180E RD190E

RLZ2.0

Abstract: oms 450 104 csk RD47E RD47F RD47M RD47P RD51F RD51FM RD51P
Contextual Info: — A M RD47E RD47F RD47FM RD47M RD47P RD51E RD51F RD51FM RD51P RD56E RD56F RD56P RD62E RD62F RD62P RD68E RD68F RD68P RD75E RD75F RD75P RD82E RD82F RD82P RD91S RD91P RD100E RDIOOP RD110E RD110P RD12GE RD120P RD130E BD140E RD150E RD160E RD170E RD180E RD190E

R047F

Abstract: oms 450 RD51P 104 csk R075E RD47E RD47F RD47M RD47P RD51F
Contextual Info: — A M RD47E RD47F RD47FM RD47M RD47P RD51E RD51F RD51FM RD51P RD56E RD56F RD56P RD62E RD62F RD62P RD68E RD68F RD68P RD75E RD75F RD75P RD82E RD82F RD82P RD91S RD91P RD100E RDIOOP RD110E RD110P RD12GE RD120P RD130E BD140E RD150E RD160E RD170E RD180E RD190E

BD 139 transistor

Abstract: BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140
Contextual Info: BD140 PNP E P IT A X IA L - P L A N A R - S IL IC O N - T R A N S IS T O R • • • • • • • Driver for Audio Amplifier Active Convergenz Regulators Power Switching Ptot = 6.5 W at T q * 60 °C hpE > 40 at lc = 150 mA VcE sat < 0-5 V at lc = 0.5 A

BD139

Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD135 BD140 npn TRANSISTOR NPN BD140 of ic BD140
Contextual Info: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed

BD140 npn

Abstract: BD140 BD136 BD138 transistor BD140 BD140 circuits BD140 01 BD136-16 BD140-10 of transistor BD140
Contextual Info: BD136 BD138/BD140  PNP SILICON TRANSISTORS Type Marking BD136 BD136 BD136-10 BD136-10 BD136-16 BD136-16 BD138 BD138 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140-16 3 • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon

BD140 npn

Abstract: BD140 philips BD139 NPN transistor TRANSISTOR NPN BD140 BD140 application circuits circuits transistor BD139 N bd135 n bd140 equivalent transistor BD136 BD140 circuits
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of 1997 Mar 26 1999 Apr 12 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 PINNING

bd136 N

Abstract: BD139 p BD136 BD139 to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO-128 • Complement to B D 135, B D 137 and BD139 respectively A BSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage BD136 BD138 BD140 Collector Emitter Voltage BD136

BD140 philips

Abstract: TRANSISTOR NPN BD140 TRANSISTOR NPN BD139 BD140 application circuits circuits bd140 equivalent transistor BD136 PHILIPS bd140 equivalent bd140 data sheet BD139 N BD139 NPN transistor download datasheet
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors

BD136

Abstract: BD140 TRANSISTOR NPN BD140 BD140 npn BD138 transistor BD140 BD140 circuits transistor BD138 transistor bd136 of transistor BD140
Contextual Info: BD136 BD138/BD140 PNP SILICON TRANSISTORS Type Marking BD136 BD136-10 BD136 BD136-10 BD136-16 BD136-16 BD138 BD140 BD138 BD140 BD140-10 BD140-10 BD140-16 BD140-16 3 • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon

transistors bd136

Contextual Info: DISCRETE SEMICONDUCTORS BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139

CDIL BD137

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package EC B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

PC817B

Abstract: VIPER53 ST VIPER 06 flyback VIPER53-E STEVAL-ISA029V1 VIPER53 EQUIVALENT PC817-B STPS1150 STPS2H100 VIPER53E
Contextual Info: STEVAL-ISA029V1 Compact power supply for DVD/set top box evaluation board with three Vout -30 V, +3.3 V, +12 V Data Brief Features • Input voltage range 85 VAC – 300 VAC ■ VOUT1= 12 V (±5%) ■ IOUT1= 1 A ■ VOUT2= 3.3 V (±2%) ■ IOUT2= 100 mA

VIPER53

Abstract: PC817B optocoupler PC817b VIPER53-E STPS1150 VIPER53 EQUIVALENT PC817-B STPS2H100 STTH110 VIPer53 Application Note
Contextual Info: STEVAL-ISA029V1 Compact power supply for DVD/set-top box demonstration board with three Vout -30 V, +3.3 V, +12 V Data Brief Features • Input voltage range: 85 VAC – 300 VAC ■ VOUT1= 12 V (±5%) ■ IOUT1= 1 A ■ VOUT2= 3.3 V (±2%) ■ IOUT2= 100 mA

Contextual Info: STEVAL-ISA029V1 Compact power supply for DVD/set-top box demonstration board with three Vout -30 V, +3.3 V, +12 V Data Brief Features • Input voltage range: 85 VAC – 300 VAC ■ VOUT1= 12 V (±5%) ■ IOUT1= 1 A ■ VOUT2= 3.3 V (±2%) ■ IOUT2= 100 mA

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes