SST5912 Search Results

SST5912

Abstract: 2N5911 DS072
Contextual Info: N-Channel JFET Monolithic Dual LLC SST5912 FEATURES DESCRIPTION APPLICATIONS The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 mmhos , low leakage ( < 1pA typically) and low noise, The

M5911

Contextual Info: SILICONIX INC IflE D • A5S473S D D I B I S I A ■ SST5912 ja rs s ö ä N-Channel JFET Pair / The SST5912 Is a monolithic pair of JFETs mounted In a single SO-8 package. The SST5912 features high speed amplification slew rate , high gain (typically > 6 mS), and low gate leakage (typically

Dual N-Channel JFET

Abstract: jfet differential transistor VGS1 PIN N-CHANNEL Datasheet SST5912 "N-Channel JFET" 2N5911 dual jfet vhf MONOLITHIC AMPLIFIERS SST5911
Contextual Info: N-Channel JFET Monolithic Dual CORPORATION SST5911 / SST5912 FEATURES DESCRIPTION APPLICATIONS The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 µmhos ,

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,

SST5912

Abstract: 2N5911 100C2
Contextual Info: N-Channel JFET Monolithic Dual caioqic CORPORATION SST5912 FEATURES DESCRIPTION • • • • Th e S S T 5 9 1 2 is a High S peed N -Channel Monolithic JFE T pair encapsulated in a surface mount plastic S O -8 package. Th e device is designed far high gain typically > 6 000 |j.mhos ,

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 FEATURES DESCRIPTION • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 nmhos ,

Contextual Info: SST5912C MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix / National SST5912C FEATURES Improved Direct Replacement for SILICONIX & NATIONAL SST5912C LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)

SST5912

Contextual Info: SST5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National SST5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL SST5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)

SST5911

Abstract: SST5912 2N5911 ds071
Contextual Info: N-Channel JFET Monolithic Dual LLC SST5911 / SST5912 FEATURES DESCRIPTION APPLICATIONS The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 µmhos ,

dual jfet vhf

Contextual Info: N-Channel JFET Monolithic Dual calodlc CORPORATION SST5912 FEATURES • • • • High G a in . Low Leakage . Low Noise Surface Mount Package APPLICATIONS • Differential Wideband Amplifier

2N5911

Abstract: SST5912
Contextual Info: N-Channel JFET Monolithic Dual CORPORATION SST5912 FEATURES DESCRIPTION APPLICATIONS The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 mmhos , low leakage ( < 1pA typically) and low noise, The

M5911

Abstract: fs211
Contextual Info: SILICONIX INC IflE D • 6254735 0013T14 & M5911 SERIES JUi in c o rp o ra te d N-Channel JFET Pairs The M5911 Series are monolithic pairs of JFETs mounted In a single TO-78 package. The M5911 features high speed amplification slew rate , high gain (typically > 6 mS), and low gate leakage

2n4392 SPECIFICATION

Abstract: SST4856 BSR58 equivalent SST4092 VCR2N equivalent SST4857 2N4858 equivalent SST4860 2N4856 SILICONIX SST4858
Contextual Info: Siliconix incorporated HIGH GAIN JFET AMPLIFIERS Cont'd en 'DSS PART# V(BR)GSS (V) MIN MAX (mA) 'GSS (PA) 9fs 9 os (mS) (nS) C| SS (PF) C rs s (PF) 7 12 12 12 13 13 13 12 12 12 3 3.5 3.5 3.5 3.5 3.8 4 3.5 3.5 3.5 4 3 3 3 3 3 3 3 3 3 1 1 1 4 4 4 3.5 3.5 3.5

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation

Ultra High Input Impedance N-Channel JFET Amplifier

Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
Contextual Info: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

"DUAL N-Channel JFET"

Abstract: ultra low igss pA J176 equivalent
Contextual Info: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

FET U310

Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW

jfet transistor 2n4391

Abstract: ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement
Contextual Info: J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS on ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)

ultra low igss pA mosfet

Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Contextual Info: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)

P-Channel Depletion Mode FET

Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
Contextual Info: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5

Current Regulator Diode

Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Contextual Info: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted