LS312 Search Results

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

LS312

Contextual Info: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

LS312

Abstract: DIRECT Replacement with Analog Devices mat01
Contextual Info: LS312 SUPER-BETA DUAL NPN TRANSISTOR Linear Systems Offers Direct Alternative for Analog Devices MAT01 The LS312 is a monolithic pair of Super-Beta High Voltage NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring

Contextual Info: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

Contextual Info: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC

Contextual Info: LINEAR SYSTEMS LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES VERY HIGH GAIN hF£ 200 @ 10^A-1mA TIGHT VBE MATCHING 'Vœi-VBaUOÆmVTYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 E2 ABSOLUTE MAXIMUM RATINGS NOTE 1 <3 25°C unless otherwise noted

ic cd 4042

Contextual Info: LINEAR SYSTEMS LS310 LS311 LS312 LS313 MÖNQLITHIC DUAL NPN Linear Integrated Systems FEA TU R E S VERY HIGH GAIN hpE> 200 a 10^A-1mA TIGHT VBE MATCHING lVBE1-VBE2l = 0 2mV TYP 250MHz TYP. @ 1 mA HIGH fT C1 E1 C2 E2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)

LS312

Contextual Info: LS312 SUPER-BETA DUAL NPN TRANSISTOR Linear Systems Offers Direct Alternative for Analog Devices MAT01 The LS312 is a monolithic pair of Super-Beta High Voltage NPN transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring

Contextual Info: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

ls312

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT TO71 & TO78 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 E2 @ 25°C unless otherwise noted Collector

Contextual Info: LS312 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS312 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC

LS311

Abstract: LS310 LS312 LS313
Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

LS311

Abstract: sn74ls211 ls212 LS211 SN54LS211 ls213 ls-212 12dq6 18a2g
Contextual Info: TYPES SN 54 L S 2 1 1 , SN54LS212, SN54LS213, SN54LS311, LS312, SN54LS313, SN74LS211, SN74LS212, SN74LS213, SN74LS311, LS312, SN74LS313 RANDOM-ACCESS READ/WRITE MEMORIES « Choice of 16 word by 9 bit or 16 word by 12 bit Configurations • Choice of 3-State or Open-Collector Outputs

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation

J201 spice

Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Contextual Info: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated

Ultra High Input Impedance N-Channel JFET Amplifier

Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
Contextual Info: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

"DUAL N-Channel JFET"

Abstract: ultra low igss pA J176 equivalent
Contextual Info: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

FET U310

Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW

jfet transistor 2n4391

Abstract: ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement
Contextual Info: J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS on ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)

ultra low igss pA mosfet

Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Contextual Info: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)