SST2 Search Results

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

Contextual Info: NPA N-Channel JFETs C X 'S ilico n ix in c o rp o r a te d TYPE PACKAGE Single TO-92 TO-226AA • J201, J202 Single SOT-23 • SST201, SST202 Single TO-18 • 2N4338, 2N4339, 2N4340, 2N4341, VCR4N Single Chip • Available as NPA1CHP, NPA2CHR NPA3CHP, NPA4CHP

hearing aids amplifiers

Contextual Info: SST200/200A Vishay Siliconix New Product N-Channel JFETs PRODUCT SUMMARY VGS off 0 0 V(BR}GSS -0 .3 to -0 .9 00 9 is M in (m S ) lo s s 0.25 -2 5 Min (mA) 0.15 FEATURES BENEFITS APPLICATIONS • Low Cutoff Voltage: <0 .9 V • • Mini-Microphones • High Input Im pedance

SST201

Abstract: j204 siliconix
Contextual Info: T em ic J/SST201 Series S e m i c o n d u c t o r s N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary lo ss P a rt N um ber V c s io ff V ) V(BR)GSS M i n (V ) gfs M i n ( m S ) J/SST201 -0 .3 t o -1 .5 -4 0 0.5 0.2 J/SST202 -0 .8 to - 4

sst2100

Abstract: LPD-12
Contextual Info: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high

SST25VF080B

Contextual Info: 8 Mbit SPI Serial Flash SST25VF080B SST25VF080B8Mb Serial Peripheral Interface SPI flash memory Data Sheet FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency

H 1061

Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

sst201

Abstract: J201 J202 J204 SST202 SST204 ultra low igss pA
Contextual Info: J/SST201 Series New Product Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 –0.3 to –0.9 –25 0.5 0.7 J/SST202 –0.8 to –4 –40 1 0.9

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details SST22AGA Product Details Time Delay Relays Quick Links

SST25WF080

Abstract: XFBGA PACKAGE OUTLINE SST25VF BPL TV circuit SST25VF*B SST25VF016B SST25VF016B16Mb
Contextual Info: 8Mbit 1.8V SPI Serial Flash SST25WF080 SST25VF016B16Mb Serial Peripheral Interface SPI flash memory Advance Information FEATURES: • Single Voltage Read and Write Operations – 1.65-1.95V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3

BPL TV POWER SUPPLY

Abstract: BPL TV circuit bpl tv SST25LF020A SST25LF020A-33-4C-SAE SST25LF 334CSAE
Contextual Info: 2 Mbit SPI Serial Flash SST25LF020A SST25LF020A / 040A2Mb / 4Mb Serial Peripheral Interface SPI flash memory Data Sheet FEATURES: • Single 3.0-3.6V Read and Write Operations • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • 33 MHz Max Clock Frequency

29ee020

Abstract: 29EE020-120 ms1307 29LE020 29VE020 SST29EE020 SST29LE020 SST29VE020 29ee020-150
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020, SST29LE020, SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE020 – 3.0V-only for the 29LE020 – 2.7V-only for the 29VE020 • Superior Reliability – Endurance: 100,000 Cycles (typical)

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

SST29EE010

Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

SST201

Abstract: SST204 J/SST202 J201 J202 J204 SST202
Contextual Info: J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2

J/SST202

Abstract: J/SST201 sst201 sst204 SST202 JFET 50ma -40v J/SST201-4
Contextual Info: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures

vdb 1031

Abstract: sst211 sot-143 SST215 ultra FAST DMOS FET Switches SST211 ALPHA SEMICONDUCTOR sot143 fet FAST DMOS FET Switches SST211X SST211Y
Contextual Info: ALPHA SEMICONDUCTOR Excellence in Analog Power Products SST211/SST213/SST215 FAST DMOS FET Switches N-Channel Enhancement-Mode FEATURES APPLICATIONS • • • • • • • • • High Speed Switching td ON Ins Low Capacitance 2.4pF typical Low ON Resistance 50Ì2 typical

SST28SF040A

Abstract: SST28VF040A
Contextual Info: 4 Mbit 512K x8 SuperFlash EEPROM SST28SF040A / SST28VF040A Data Sheet SST28SF / VF040A4Mb (x8) Byte-Program, Small Erase Sector flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V-only for SST28SF040A – 2.7-3.6V for SST28VF040A

sst25vf032

Abstract: 16-SOIC SST25VF032B SST25VF032B-50-4I-S2AF
Contextual Info: 32 Mbit SPI Serial Flash SST25VF032B SST25VF032B32Mb Serial Peripheral Interface SPI flash memory Advance Information FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3

SST29LE010

Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29LE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 3.0-3.6V for SST29LE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)

Contextual Info: S 6 S-THOMSON M2E » 7 SST237 0G33MÖÖ ö ÖSGTH : X-46-09-05 S G S -T H O M S O N T74LS195A l^D ^ s i[L(i©ir^ iDOi UNIVERSAL 4-BIT SHIFT REGISTER a • ■ ■ ■ ■ TYPICAL SHIFT REGISTER FREQUENCY OF 40 MHz ASYNCHRONOUS MASTER RESET J, K INPUT TO FIRST STAGE

J202 equivalent

Abstract: SST204 ultra low igss pA AN102 AN106 J201 J202 J204 SST201 SST202
Contextual Info: J/SST201 Series Siliconix NĆChannel JFETs J201 J202 J204 Product Summary SST201 SST202 SST204 Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 -0.3 to -1.5 -40 0.5 0.2 J/SST202 -0.8 to -4 -40 1 0.9 J/SST204 -0.3 to -2 -25 0.5

J270

Abstract: J271 SST270 SST271
Contextual Info: J/SST270 Series Siliconix PĆChannel JFETs J270 J271 Product Summary SST270 SST271 Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST270 0.5 to 2.0 30 6 -2 J/SST271 1.5 to 4.5 30 8 -6 Features Benefits Applications D D D D D Full Performance from LowĆVoltage

25LF040A

Abstract: 25VF080B 25LF080A MX25L8005 AN-00204 25lf080a PIN DIAGRAM 25LF080 MXIC serial Flash MX25L4005A SST25LF040A
Contextual Info: APPLICATION NOTE Migrating to the Macronix 4M/8M Serial Flash Families from SST 4M/8M Serial Flash Cross Reference Part Number Macronix SST 4Mb serial flash MX25L4005A SST25LF040A 8Mb serial flash MX25L8005 SST25LF080A Introduction Macronix offers a family of serial flash products from 1Mb to 128Mb densities. Of these products, two of the