SSF10N60A Search Results
SSF10N60A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSF10N60A | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | Original | 260.04KB | 7 | ||
| SSF10N60A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSF10N60A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.55KB | 6 |
SSF10N60A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
mosfet 600V 100A STContextual Info: SSF10N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 iaA Max. @ VDS= 600V |
OCR Scan |
ssf10n60amosfet 600v 100a st | |
mosfet yb
Abstract: SSF10N60A csqs
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OCR Scan |
ssf10n60amosfet ybcsqs | |
SSF10N60AContextual Info: SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V |
Original |
ssf10n60a | |
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Contextual Info: SSF10N60A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 2 5 n A (M a x .) @ V DS = 600V ■ Low RDS(ON) : 0.646£1 (Typ.) |
OCR Scan |
ssf10n60a | |
SSF10N60AContextual Info: SSF10N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ ^ D S o n Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 0 - 8 & lD = 6.9 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V |
OCR Scan |
ssf10n60a003b333003b33md03b335 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |
sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
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Original |
irf830airf830bpower247tmsss4n60a+9 | |
irfs250aContextual Info: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A |
OCR Scan |
irfp140airfp150assh70n10airfp240a+7 | |
L69AContextual Info: Advanced Power MOSFET S S 1 F Ö N FEATURES B • ■ ■ ■ ■ ■ B Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jJA M ax. @ VDS = 600V Low R q8(on) • 0 646 £2 (Typ.) |
OCR Scan |
ssf10n60al69a | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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Original |
sc70-6ot-23fdr8321lfdr8521l+13 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 |