SSD200 Search Results

SSD2005

Abstract: P-CHANNEL POWER MOSFET
Contextual Info: SSD2005 Dual P-CHANNEL POWER MOSFET FEATURES 8SOIC • Lower Rds on ■ improved Inductive Ruggedness Si ■ Fast Switching Times gi q t ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability [T o S2 ~8~l Pi

c550c

Abstract: mosfet 751
Contextual Info: SSD2004 N&P-CHANNEL POWER MOSFET FEATURES 8 SOIC • Lower Rds on ■ Improved Inductive Ruggedness si [ T ~BlD i ■ Fast Switching Times Gì [ j T ~ n 01 ■ Lower Input Capacitance Si [ X ~6~l Dì Gj [ T H jD i ■ Extended Safe Operating Area ■ Improved High Temperature Reliability

SSD2008

Abstract: SSD2008A
Contextual Info: SSD2008A !"#$ !"#$%&'!! *#+,(-*.+/0(1 FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS(ON) S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 ■ Low Input Capacitance ■ Extended Safe Operating Area D1 D1 Top View S2 ■ Improved High Temperature Reliability

SSD2009

Abstract: TP150 2TS01
Contextual Info: DUAL N-CHANNEL POWER MOSFETS SSD2009 FEATURES • • • • • • • 8SO IC Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

SSD2004

Abstract: 250M
Contextual Info: N&P-CHANNEL POWER MOSFETS SSD2004 FEATURES • Extremely Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

SSD2007A

Abstract: ISS106
Contextual Info: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP ‰ Extremely Lower RDS ON ‰ Improved Inductive Ruggedness ‰ Fast Switching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View ‰ Rugged Polysilicon Gate Cell Structure ‰ Low Input Capacitance D1,D2

transistor ssd2008

Abstract: SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
Contextual Info: SSD2008A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 ! Low Input Capacitance ! Extended Safe Operating Area D1 D1 Top View D2 D2 ! Improved High Temperature Reliability

Contextual Info: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC n Lower RDS ON n Improved Inductive Ruggedness n Fast Swtching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View n Low Input Capacitance n Extended Safe Operating Area D1 D1 n Improved High Temperature Reliability

SSD2003

Abstract: U2020 W749
Contextual Info: SSD2003 Dual N-CHANNEL POWER MOSFET FE A T U R E S • Lower Rds on ■ Improved Inductive Ruggedness ■ Fast Switching Times ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability Product Summary Part Number

SSD2007

Abstract: LS125A mosfet n-channel 12 amperes Power MOSFET 50V 20A
Contextual Info: DUAL N-CHANNEL POWER MOSFET SSD2007 FEATURES • Extremely Lower R 8SOIC ds o ni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

SSD2002

Abstract: DD214 942 rectifier diode
Contextual Info: N & P-CHANNEL POWER MOSFET SSD2002 FEATURES 8SOIC • Extremely Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

PN channel MOSFET 10A

Abstract: SSD2009 SSD2009A
Contextual Info: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability

SSD2003

Abstract: 945 mosfet n mosfet n channel k 946 250M
Contextual Info: DUAL N-CHANNEL POWER MOSFET SSD2003 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching tim es > Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high tem perature reliability

mosfet ssd

Abstract: RG602
Contextual Info: SSD2002 N&P-CHANNEL POWER MOSFET FEATURES • Lower Rds on ■ Improved Inductive Ruggedness ■ Fast Switching Times Gì ¡ j T ~~7~l Di ■ Lower Input Capacitance S2 [ X T I D? ■ Extended Safe Operating Area ■ Improved High Temperature Reliability

Contextual Info: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP S1 1 8 D1 G1 2 7 D1 ! Extremely Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance D1,D2 D1,D2

Contextual Info: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability

SSD2007A

Contextual Info: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP S1 1 8 D1 G1 2 7 D1 ! Extremely Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance D1,D2 D1,D2

ssd1001

Abstract: HDD spindle motor circuit SSD1002 pump motor 12v datasheet spindle motor circuit sensorless circuit SSD2003 1.5A 2A voice coil Driver "BANDGAP REFERENCE" cross bldc electric drive spindle
Contextual Info: www.fairchildsemi.com KA2811C 12V Spindle Motor and Voice Coil Motor Driver Features Description SMP Circuit The KA2811C is a monolithic one-chip IC which includes SPM Spindle motor driver, VCM (Voice coil motor) driver and peripheral driver, designed for driving HDD motor. For

KA3120

Abstract: 12v DC MOTOR SPEED CONtrol ic Hdd spindle motor back-emf HDD spindle motor circuit HDD circuit schematic
Contextual Info: PRELIMINARY HDD PRODUCTS KA3120 SPINDLE & VOICE COIL MOTOR ONE CHIP DRIVER 48-QFPH-1414 The KA3120 is an ASIC combination chip, which was designed for the HDD, includes the following functions: spindle motor drive, voice coil motor drive, retract and power management.

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

hdd spindle motor

Abstract: PC hdd CIRCUIT diagram cstm ssd1001 KA2811C "BANDGAP REFERENCE" cross SSD2003 npn-pnp dual
Contextual Info: HDD PRODUCTS KA2811C SPM + VCM 1 CHIP DRIVER 48-QFPH-1414 The KA2811C is a monolithic IC and an one-chip IC which includes SPM Spindle motor driver, VCM (Voice coil motor) driver and peripheral driver, designed for driving HDD motor. For high starting torque and high speed, SPM

spindle and VCM motor controller

Abstract: 3 phase bldc controller hdd vcm controller brake failure indicator result brake failure indicator hard drive spindle motors diagram FAN8621B spindle motor VCM controller 64 12v back-emf RB4110
Contextual Info: www.fairchildsemi.com FAN8621B 12V Spindle Motor and Voice Coil Motor Driver IC Features Description General The FAN8621B, is a Bipolar monolithic stand-alone IC, designed for 12V HDD applications.The internal power stage consists of vertical PNP and NPN TRs for both SPM

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.