SS000 Search Results

1 micro farad capacitor

Abstract: 100 micro farad capacitor ECG012 high power amplifier sot89
Contextual Info: PRELIMINARY DATA SHEET ECG012 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications n n DC to 2500 MHz 35 dBm Typical OIP3 at 2400 MHz Highly Reliable InGaP HBT 20.0 dBm Typical P1dB at 2400 MHz 5.1 dB Typical Noise Figure at 900 MHz Excellent Stability

NFM61R10T102

Abstract: TOKO VARIABLE INDUCTOR LL2012-F8N2K EV0037 NFM61R10T102T1 toko variable capacitor MCR03J104 LL2012-F3N9K R12468 EC-0037
Contextual Info: EC-0037 VARIABLE GAIN AMPLIFIER 500–3000 MHz Features Applications n Low Power Consumption Power-down Capability Range n 50 Ohm Matched n Wide Gain Control n High Linearity for Digital Systems n Single 3.0 to 5.0 V Operation n Open-collector Design Allows Reactive Matching

BJT with i-v characteristics

Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
Contextual Info: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available

class g power amplifier schematic

Abstract: EC-2067 class h power amplifier schematic 2067-1 cellular phone amplifier power control transistor class a power amplifier 2067
Contextual Info: EC-2067 PRELIMINARY DATA 1W CLASS A POWER AMPLIFIER 800–1000 MHz Features Applications n n n n n +32.0 dBm Maximum Output Power at 3.6V Vcc Single 3.3V to 6.0V Power Supply 32 dB Small Signal Gain Power-down Capability n n n Analog Cellular ISM 900 2-Way Paging

8002A

Abstract: 8002b IS888 CI 8002 5530d-0 CRT5027 74LSXX 88i88 7x11 dot matrix LD E 5027
Contextual Info: STANDARD MICROSYSTEMS CORPORATION, CRT 8002 fJLPC FAMILY CRT Video Display Attributes Controller Video Generator VDAC PIN CONFIGURATION FEATURES □ On ch ip c h a ra c te r g e n e ra to r m a s k p ro g ra m m a b le 128 C h a ra c te rs (a lp h a n u m e ric an d g ra p h ic )

ECG008

Abstract: MCR10J100
Contextual Info: PRELIMINARY DATA SHEET ECG008 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications „ „ DC to 3000 MHz 40 dBm Typical OIP3 at 1000 MHz Highly Reliable InGaP HBT 15.0 dB Typical Gain at 1000 MHz 23.0 dBm Typical P1dB at 2000 MHz 4.8 dB Typical Noise Figure at 2000 MHz

k 3918 TRANSISTOR

Abstract: E4432 sm 8619 1517P C100 EC-1089 L100 electronic power generator using transistor 13001 bipolar transistor
Contextual Info: PRODUCTION DATA SHEET EC-1089 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 15.5 dB Typical Gain at 900 MHz 23.5 dBm Typical P1dB at 1900 MHz 5.1 dB Typical Noise Figure at 900 MHz

100 micro farad capacitor

Abstract: capacitor 47 micro farad capacitor 100 micro farad ECG006 ECG00 MARUWA CAPACITORS "H series"
Contextual Info: ECG006 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 15 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 32 dBm Output IP3 at 1000 MHz 4.0 dB Noise Figure at 2000 MHz

100 micro farad capacitor

Abstract: capacitor 100 micro farad 1 micro farad capacitor 10 micro farad capacitor ECG004 capacitor 1 micro farad capacitor 47 micro farad capacitor 270 micro farad
Contextual Info: ECG004 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 16.2 dB Gain at 1000 MHz 13.5 dBm Output P1dB at 1000 MHz 28 dBm Output IP3 at 1000 MHz 3.2 dB Noise Figure at 2000 MHz

315oC

Abstract: ECM004
Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar

DCS1800

Abstract: ECM009 EGSM900 PCS1900 GSM module circuit diagram GSM module BLOCK diagram GSM/BA5 Amplifier
Contextual Info: PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output High Efficiency EGSM=52%, DCS= 47% 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control

ECG003

Abstract: EIC Semiconductor capacitor 10 micro farad
Contextual Info: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications „ „ DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz

MCH182F104ZK

Abstract: gsm module datasheet DCS1800 ECM007 EGSM900 MCH185A180JK C5611 ecshi Power Amplifier Module for GSM MCH185A330JK
Contextual Info: PRELIMINARY DATA SHEET ECM007 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally input and output matched High Efficiency EGSM=55%, DCS= 50% Small size On Board band select and output power control

ECM004

Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar

MCR03EZH-J000

Abstract: mch185C102kk MCH185A020CK bipolar transistor die layout MCH185A180JK MCR03EZHJ ECP200 ECS-H1CC106R MCH185A101JK QFN-16
Contextual Info: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. NOTES: 1. TO BE USED WITH PANDUIT METAL BANDING MBCSH-QR316 INSTALLATION TOOLS: RT2HT, PBTMT, RT2HTN 3. BRACKETS [ 4. MINIMUM LOOP TENSILE STRENGTH: 450 LBS 2002N

cdi schematics pcb

Abstract: circuit diagram of PAM transmitter and receiver dc cdi schematic diagram cdi schematic ECM014 MCH185A101JK
Contextual Info: PRELIMINARY DATA SHEET ECM014 US PCS Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features US PCS CDMA Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28dBm CDMA Power with 38% Efficiency 16dBm CDMA Power with 9% Efficiency Power-down Capability

sot89 CA 19

Abstract: C2 SOT-89 RF amplifier
Contextual Info: ECG055 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 3000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ „ „ DC to 3000 MHz 20 dB Gain at 1000 MHz 19 dB Gain at 2000 MHz 18 dBm Output P1dB at 1000 MHz 18 dBm Output P1dB at 2000 MHz

transistor "micro-x" "marking" 3

Abstract: 0.22 micro farad capacitor Micro-X Marking E
Contextual Info: PRODUCTION DATA SHEET EC-1078 HIGH LINEARITY BROADBAND AMPLIFIER DC - 6 GHz Features Applications „ „ „ „ „ „ ISM Band, 900 MHz to 2.4 GHz „ Broadband Gain Blocks „ High Linearity Amplifiers „ Cellular, PCS Base Stations DC to 6 GHz 19.5 dB Gain at 1000 MHz

transistor "micro-x" "marking" 3

Abstract: transistor "micro-x" "marking" 102 d marking "Micro-X" d marking EY sot-89 micro-x transistor d marking Micro-X Micro-X marking g Transistor 35 MICRO-X 98nF
Contextual Info: ECG040 PRODUCTION DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 4000 MHz Applications Features „ „ „ „ „ „ Broadband Gain Blocks DC to 4000 MHz 14.8 dB Gain at 1000 MHz 18.0 dBm Output P1dB at 1000 MHz 35.0 dBm Output IP3 at 1000 MHz Low Cost Version

capacitor 270 micro farad

Contextual Info: ECG004 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 16.2 dB Gain at 1000 MHz 13.5 dBm Output P1dB at 1000 MHz 28 dBm Output IP3 at 1000 MHz 3.2 dB Noise Figure at 2000 MHz

NFM61R10T102T1

Abstract: COMMUNICATIONS TRANSISTOR CORP EC-0006 EC-5007 NFM61R10T102 nfm61r10t transistor 2233 1738 TRANSISTOR
Contextual Info: EC-0006 HIGH-ISOLATION LIMITING AMPLIFIER 500–3000 MHz Features Applications n Single 3.0 to 5.0 Vdc Operation n High Isolation to Buffer VCO, or any Sensitive Circuit n 0 dBm Output Power at 50 Ohm Load n Power-down Capability n Use to Drive EC-5007 LO port

5007

Abstract: COMMUNICATIONS TRANSISTOR CORP EC-0006 EC-5007
Contextual Info: EC-5007 PRELIMINARY DATA LNA / DOWNCONVERTER 500–3000 MHz Features n n n n n n n n Single 3.0 to 5.0 Vdc Operation Separate LNA and Active Downconverter functions Balanced IF Output to 200 MHz Power-down Capability Low Power Consumption Low LO Power Use EC-0006 for LO drive

InP HBT transistor low noise

Abstract: 1 micro farad capacitor 100 micro farad capacitor ECG001 current amplifier note darlington InP HBT transistor
Contextual Info: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications n n Broadband Gain Blocks n n n n DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz