BJT with i-v characteristics
Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
Contextual Info: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available
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ecg015ot-89ss-000145-000bjt with i-v characteristics+8ssg transistor3362 motorolainp hbt transistormotorola 3362ssg 23 transistorll1608-f15nkmch185a180jkmch185a560jk
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315oC
Abstract: ECM004
Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar
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ecm004ap-000513-000ap-000516-000ss-000371-000+1315oc
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ECM004
Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar
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ecm004ap-000513-000ap-000516-000ss-000371-000 |
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tdma circuit diagram
Abstract: ECM806 IS136 MCH185A101JK capacitor 6032 ecshi
Contextual Info: PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM806 is a 6 X 6 mm cellular band 824 to 849MHz dual mode (TDMA IS136 and AMPS) power amplifier module. This device was developed using EiC’s own InGaP
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ecm806849mhzis136is136/amps+8ap-000513-000ap-000516-000ecm806-2000ss-000489-000tdma circuit diagrammch185a101jkcapacitor 6032ecshi
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cdi schematics pcb
Abstract: circuit diagram of PAM transmitter and receiver dc cdi schematic diagram cdi schematic ECM014 MCH185A101JK
Contextual Info: PRELIMINARY DATA SHEET ECM014 US PCS Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features US PCS CDMA Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28dBm CDMA Power with 38% Efficiency 16dBm CDMA Power with 9% Efficiency Power-down Capability
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ecm01428dbm16dbm1910mhz+8ap-000513-000ap-000516-000ss-000447-000cdi schematics pcbcircuit diagram of pam transmitter and receiverdc cdi schematic diagramcdi schematicmch185a101jk
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InP HBT transistor low noise
Abstract: 1 micro farad capacitor 100 micro farad capacitor ECG001 current amplifier note darlington InP HBT transistor
Contextual Info: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications n n Broadband Gain Blocks n n n n DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz
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ecg001ot-89ss-000349-000inp hbt transistor low noise+41 micro farad capacitor100 micro farad capacitorcurrent amplifier note darlingtoninp hbt transistor
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30 micro farad capacitor 6000 volt
Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
Contextual Info: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability
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ecg014ot-89ss-000122-00030 micro farad capacitor 6000 volt+8hbt transistorj1 05075ll1608-f33nkmch185a180jkmch185a560jk7953scr 50kaic 76660
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ECM008
Abstract: PAM 120
Contextual Info: PRELIMINARY DATA SHEET ECM008 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM008 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ecm00828dbmss-000372-000pam 120 |
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ECM001
Abstract: ecm001is
Contextual Info: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction
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ecm001ss-000340-000ecm001is |
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ECM001
Abstract: dual power supply
Contextual Info: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction
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ecm001ap-000513-000ap-000516-000ss-000340-000+1dual power supply
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cdi schematics pcb
Abstract: dc cdi schematic diagram cdi schematic HBT transistor ECM011 MCH185A101JK PAE1 ecshi
Contextual Info: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency
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ecm01128dbm16dbm824mhz+11849mhzap-000513-000ap-000516-000ss-000398-000cdi schematics pcbdc cdi schematic diagramcdi schematichbt transistormch185a101jkpae1ecshi
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ECM001
Abstract: EIC 70
Contextual Info: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction
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ecm001ap-000513-000ap-000516-000ss-000340-000+1eic 70
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ECM004
Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar
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ecm004powe1-000ss-000371-000 |
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InP HBT transistor
Abstract: HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics ECG003 MOTOROLA RF TRANSISTORS srf
Contextual Info: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz
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ecg003ot-89ss-000375-000inp hbt transistor+5hbt transistorbjt datasheet with i-v characteristics1 micro farad capacitorhigh end amplifier schematicsmotorola rf transistors srf
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ECM028
Contextual Info: PRELIMINARY DATA SHEET ECM028 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM028 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ecm02828dbmap-000513-000ap-000516-000+1ss-000520-000
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MCH185A101JK
Abstract: ECM011 capacitor 6032
Contextual Info: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency
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ecm01128dbm16dbm824mhz+6849mhzap-000513-000ap-000516-000ss-000398-000mch185a101jkcapacitor 6032
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ECM028
Contextual Info: PRELIMINARY DATA SHEET ECM028 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM028 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ecm02828dbmap-000513-000ap-000516-000+1ss-000520-000
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ECM008
Contextual Info: PRELIMINARY DATA SHEET ECM008 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM008 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input
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ecm00828dbmap-000513-000ap-000516-000+1ss-000372-000
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V9637
Abstract: V9637 286-658, 286-664, 286-670, 228-8533 sensores de salida diferencial piezoresistive pressure sensor 0-30 bar presion sensor
Contextual Info: V9637 Issued / Herausgegeben / Publicado / Pubblicato 081999 Pressure Transducers Druckmeßwertgeber Anleitung Instruction Leaflet Bedienungsanleitung Hojas de instrucciones Foglio d’instruzioni Transductores de presión Trasduttori di pressione Figures / Abbildung / Figura
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v9637v9637 286-658, 286-664, 286-670, 228-8533sensores de salida diferencialpiezoresistive pressure sensor 0-30 bar+1presion sensor
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circuit diagram of PAM transmitter and receiver
Contextual Info: PRELIMINARY DATA SHEET ECM068 4 X 4 mm Korean PCS 3.5V POWER AMPLIFIER MODULE Description Features The ECM068 is a 10 -pin, 4 X 4 mm power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide
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ecm06850mfootprintap-000513-000ap-000516-000+2ss-000568-000circuit diagram of pam transmitter and receiver
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Contextual Info: PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE Features Features Korea PCS CDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28.0 dBm CDMA Power 35% CDMA Efficiency Power-down Capability Quiescent Current Control Wide Range Vref/pd
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ecm0181750mhz1780mhzap-000513-000+2ap-000516-000ss-000446-000
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PAE1
Abstract: ECM010 2110 - 2170mhz power module
Contextual Info: PRELIMINARY DATA SHEET ECM010 WCDMA 3.5V POWER AMPLIFIER MODULE Features Features WCDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 27.0 dBm WCDMA Power 40% WCDMA Efficiency Power-down Capability Quiescent Current Control Better Efficiency at Low Power
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ecm010ap-000513-000ap-000516-000ss-000411-000+2pae12110 - 2170mhz power module
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