315OC Search Results

315OC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BJT with i-v characteristics Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK Contextual Info: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available	Original	ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK	PDF
315oC Abstract: ECM004 Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar	Original	ECM004 ECM004 AP-000513-000 AP-000516-000 SS-000371-000 315oC	PDF
ECM004 Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar	Original	ECM004 ECM004 AP-000513-000 AP-000516-000 SS-000371-000	PDF
tdma circuit diagram Abstract: ECM806 IS136 MCH185A101JK capacitor 6032 ecshi Contextual Info: PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM806 is a 6 X 6 mm cellular band 824 to 849MHz dual mode (TDMA IS136 and AMPS) power amplifier module. This device was developed using EiC’s own InGaP	Original	ECM806 ECM806 849MHz) IS136 IS136/AMPS AP-000513-000 AP-000516-000 ECM806-2000 SS-000489-000 tdma circuit diagram MCH185A101JK capacitor 6032 ecshi	PDF
cdi schematics pcb Abstract: circuit diagram of PAM transmitter and receiver dc cdi schematic diagram cdi schematic ECM014 MCH185A101JK Contextual Info: PRELIMINARY DATA SHEET ECM014 US PCS Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features US PCS CDMA Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28dBm CDMA Power with 38% Efficiency 16dBm CDMA Power with 9% Efficiency Power-down Capability	Original	ECM014 28dBm 16dBm ECM014 1910MHz AP-000513-000 AP-000516-000 SS-000447-000 cdi schematics pcb circuit diagram of PAM transmitter and receiver dc cdi schematic diagram cdi schematic MCH185A101JK	PDF
InP HBT transistor low noise Abstract: 1 micro farad capacitor 100 micro farad capacitor ECG001 current amplifier note darlington InP HBT transistor Contextual Info: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications n n Broadband Gain Blocks n n n n DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz	Original	ECG001 OT-89 ECG001 SS-000349-000 InP HBT transistor low noise 1 micro farad capacitor 100 micro farad capacitor current amplifier note darlington InP HBT transistor	PDF
30 micro farad capacitor 6000 volt Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660 Contextual Info: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability	Original	ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660	PDF
ECM008 Abstract: PAM 120 Contextual Info: PRELIMINARY DATA SHEET ECM008 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM008 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input	Original	ECM008 ECM008 28dBm SS-000372-000 PAM 120	PDF
ECM001 Abstract: ecm001is Contextual Info: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction	Original	ECM001 ECM001 SS-000340-000 ecm001is	PDF
ECM001 Abstract: dual power supply Contextual Info: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction	Original	ECM001 ECM001 AP-000513-000 AP-000516-000 SS-000340-000 dual power supply	PDF
cdi schematics pcb Abstract: dc cdi schematic diagram cdi schematic HBT transistor ECM011 MCH185A101JK PAE1 ecshi Contextual Info: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency	Original	ECM011 28dBm 16dBm ECM011 824MHz 849MHz AP-000513-000 AP-000516-000 SS-000398-000 cdi schematics pcb dc cdi schematic diagram cdi schematic HBT transistor MCH185A101JK PAE1 ecshi	PDF
ECM001 Abstract: EIC 70 Contextual Info: PRELIMINARY DATA SHEET ECM001 Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction	Original	ECM001 ECM001 AP-000513-000 AP-000516-000 SS-000340-000 EIC 70	PDF
ECM004 Contextual Info: PRELIMINARY DATA SHEET ECM004 U.S. PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM004 is a PCS power amplifier module at 3.5Volts Vcc with high efficiency. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar	Original	ECM004 ECM004 Powe1-000 SS-000371-000	PDF
InP HBT transistor Abstract: HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics ECG003 MOTOROLA RF TRANSISTORS srf Contextual Info: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications n n DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz	Original	ECG003 OT-89 ECG003 OT-89 SS-000375-000 InP HBT transistor HBT transistor BJT datasheet with i-v characteristics 1 micro farad capacitor high end amplifier schematics MOTOROLA RF TRANSISTORS srf	PDF

ECM028 Contextual Info: PRELIMINARY DATA SHEET ECM028 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM028 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input	Original	ECM028 ECM028 28dBm AP-000513-000 AP-000516-000 SS-000520-000	PDF
MCH185A101JK Abstract: ECM011 capacitor 6032 Contextual Info: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency	Original	ECM011 28dBm 16dBm ECM011 824MHz 849MHz AP-000513-000 AP-000516-000 SS-000398-000 MCH185A101JK capacitor 6032	PDF
ECM028 Contextual Info: PRELIMINARY DATA SHEET ECM028 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM028 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input	Original	ECM028 ECM028 28dBm AP-000513-000 AP-000516-000 SS-000520-000	PDF
ECM008 Contextual Info: PRELIMINARY DATA SHEET ECM008 Korean PCS CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM008 is a Korean Band Personal Communications Service PCS power amplifier housed in a 6-pin, 6 X 6mm Land Grid Array, surface mounted module. The RF input	Original	ECM008 ECM008 28dBm AP-000513-000 AP-000516-000 SS-000372-000	PDF
V9637 Abstract: V9637 286-658, 286-664, 286-670, 228-8533 sensores de salida diferencial piezoresistive pressure sensor 0-30 bar presion sensor Contextual Info: V9637 Issued / Herausgegeben / Publicado / Pubblicato 081999 Pressure Transducers Druckmeßwertgeber Anleitung Instruction Leaflet Bedienungsanleitung Hojas de instrucciones Foglio d’instruzioni Transductores de presión Trasduttori di pressione Figures / Abbildung / Figura	Original	V9637 V9637 V9637 286-658, 286-664, 286-670, 228-8533 sensores de salida diferencial piezoresistive pressure sensor 0-30 bar presion sensor	PDF
circuit diagram of PAM transmitter and receiver Contextual Info: PRELIMINARY DATA SHEET ECM068 4 X 4 mm Korean PCS 3.5V POWER AMPLIFIER MODULE Description Features The ECM068 is a 10 -pin, 4 X 4 mm power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide	Original	ECM068 ECM068 50mfootprint. AP-000513-000 AP-000516-000 SS-000568-000 circuit diagram of PAM transmitter and receiver	PDF
Contextual Info: PRELIMINARY DATA SHEET ECM018 Korea Band PCS 3.5V POWER AMPLIFIER MODULE Features Features Korea PCS CDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 28.0 dBm CDMA Power 35% CDMA Efficiency Power-down Capability Quiescent Current Control Wide Range Vref/pd	Original	ECM018 ECM018 1750MHz 1780MHz AP-000513-000 AP-000516-000 SS-000446-000	PDF
PAE1 Abstract: ECM010 2110 - 2170mhz power module Contextual Info: PRELIMINARY DATA SHEET ECM010 WCDMA 3.5V POWER AMPLIFIER MODULE Features Features WCDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 27.0 dBm WCDMA Power 40% WCDMA Efficiency Power-down Capability Quiescent Current Control Better Efficiency at Low Power	Original	ECM010 ECM010 AP-000513-000 AP-000516-000 SS-000411-000 PAE1 2110 - 2170mhz power module	PDF

315OC Search Results

315OC Datasheets Context Search

BJT with i-v characteristics

315oC

ECM004

tdma circuit diagram

cdi schematics pcb

InP HBT transistor low noise

30 micro farad capacitor 6000 volt

ECM008

ECM001

ECM001

cdi schematics pcb

ECM001

ECM004

InP HBT transistor

ECM028

MCH185A101JK

ECM028

ECM008

V9637

circuit diagram of PAM transmitter and receiver

PAE1