SRM226 Search Results

srm2264lct

Contextual Info: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

Contextual Info: PF211-02 SRM2261Cs5 7o HIGH SPEED CMOS 64K-BIT STATIC RAM #Access Time 55ns/70ns # 6 5 ,5 3 6 Words X1 Bit Asynchronous #Low Supply Current •DESCRIPTION The SRM 2 2 6 IC 55/70 is a 65,536 words x 1 bit asynchronous, static, random access memory or a m onolithic

SRM2261

Abstract: SRM2261C55 SRM2261C70 AL221 2551 vn 001542
Contextual Info: OB PF211-52 kT W ^ S Si A M. A i SYSTEMS HIGH SPEED 64K BIT CMOS STATIC RAM SRM2261C55 ' SRM2261C7o SRM2261 r ; 'S - ; 7v I DESCRIPTION T h e S R M 2 2 6 IC 55/70 is a 6 5 ,5 3 6 words * 1 bit asynchronous, static, random a c cess memory or a monolithic C M O S chip. Its very low standby power requirem ent m akes it ideal for applications requiring non-volatile

SRM2264LM

Contextual Info: S R M 2 2 6 4 L i o 12 HIGH SPEED CMOS 64K-BIT STATIC RAM I DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

SRM2264LM10

Contextual Info: SRM2264L10/12 CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word x 8-bit asynchronous, static, random access m em ory on a m onolithic CM OS chip. Its very low standby power requirem ent makes it ideal for applications requir­

2264LC

Contextual Info: SRM2264LCT10/12 CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264LCT10/12 is an 8,192-word x 8-bit asynchronous, static, random access m em ory on a

TC551001a

Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
Contextual Info: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##

SRM2A256SLC

Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Contextual Info: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0

SRM2264LCT

Abstract: 2264L SRM2264
Contextual Info: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

2268C

Abstract: SRM2268
Contextual Info: PF213-02 SRM2268C 4 5 /5 5 /7 0 HIGH SPEED CMOS 16K-BIT STATIC RAM #Access Time 45ns/55ns/70ns # 4 ,0 9 6 Words X 4 Bits Asynchronous #Low Supply Current •DESCRIPTION The SRM 2268 C 45/ 55/70 is a 4,096 words x 4 bits asynchronous, static, random access memory on a monolithic

Contextual Info: PF215-52 SYSTEMS HIGH SPEED 16K BIT CMOS STATIC RAM SRM2267C45 •SRM2267C55 t i l ' 0 ! . SRM2267 /' •DESCRIPTION The SRM2267C45/55 is a 16,384 w o rd s x i bit asynchronous, static, random access memory on a monolithic CMOS chip. The asynchronous and static nature of the memory requires no external clock or refreshing circuit.

SRM2264lm10

Abstract: SRM2264L10 SRM2264L DIP-28 SRM2264L12
Contextual Info: SRM2264L10/12 CMOS 64K-BIT STATIC RAM ● Low Supply Current ● Access Time 100ns/120ns ● 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature of the memory

srm2264lct

Abstract: SRM2264LCT12 SRM2264LCT10 srm2264lmt10
Contextual Info: SRM2264LCT10/12 CMOS 64K-BIT STATIC RAM ● ● ● ● Industrial Temperature Range Low Supply Current Access Time 100ns/120ns 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264LCT10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a

SRM2264LC90

Abstract: srm2264lm90 SRM2264LC10 CS250 SRM2264 SRM2264L SRM2264L10 SRM2264L12 SRM2264LC
Contextual Info: S R M 2 2 6 4 L i o 1 2 HIGH SPEED CMOS 64K-BIT STATIC RAM I DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

Contextual Info: • ■ ■ ■ s O B n  IL. .¿m .à PF211-52 5! iS SYSTEMS S! HIGH SPEED 64K BIT CMOS STATIC RAM SRM2261C55 * SRM2261C70 -r SRM2261 'S - 7v I DESCRIPTION The SRM226 IC 55/70 is a 65,536 w o r d s x i bit asynchronous, static, random access memory or a monolithic

hm6265

Abstract: SRM2264LC12 SRM2A256SLC70 SRM2A256LC 28-pin SRM2A256LC10 SRM2A256LLC70 SRM2A256SLC SRM2B257SLM70 srm20257lc
Contextual Info: 4-1 Memories Static RAMs CMOS Static RAMs 5V operation P art num ber Pow er C ap acity Qganizafton supply (V) Ambient Operating Standby (mA, Max.) ( f t A, Max.) range OC) Access time (ns, Max.) 85 SRM2264LC90 SR M 2264LCio Current consumption 64K 8KX8

SED2000

Abstract: 141T1 1sv73 jrc 319 ic "D312" D313 circuit diagram SRM2264 sram EG8001
Contextual Info: SEDI 341 F oe CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 F o e is a VLI (Video-LCD Interface) which converts separate video signals for CRT displays into signals used with dot-matrix Liquid Crystal Displays (LCD). When a sync signal separator and a data separator

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

EG-8001

Abstract: 14H1-100 1S2267 IC 2 5/EG8001 1sv73 eg8001 MAO-MA14 SED1341FOC
Contextual Info: SEDI 341 CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 is a VLI (video-LCD interface) for converting previously separated video signals, intended for a CRT display, into signals compatible with dot-matrix liquid-crystal displays (LCDs). When sync and data

eg8001

Abstract: EG-8001
Contextual Info: SED1341 F o e CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 Foe is a VLI (Video-LCD Interface) which converts separate video signals for CRT displays into signals used with dot-matrix Liquid Crystal Displays (LCD). When a sync signal separator and a data separator

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

srm20256-12

Abstract: SRM2264 s1d13502 srm20256 640x240 SRM2264-10 srm20256-10 SRM2264 sram
Contextual Info: S1D13502 Dot Matrix Graphics LCD Controller LCD Panel Options / Memory Requirements Document Number: X16-AN-005-08 Copyright 1995, 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE