SPU28N03 Search Results

Contextual Info: SPD28N03 SPU28N03 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • övlöt rated • 175°C operating temperature Type ^DS SPD28N03 30 V b 28 A Pin 1 Pin 2 Pin 3 G D S Package f f DS on (à) VGS 0.023 Q, ^GS = 10 V P-T0252

Siemens DIODE E 1220

Abstract: VPT09050
Contextual Info: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS

s4142

Abstract: transistor smd MJ 145 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L
Contextual Info: SPD28N03L SPU28N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPD28N03L 30 V 28 A SPU28N03L RDS on @ VGS Pin 1 Pin 2 Pin 3

kd smd transistor

Contextual Info: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

Siemens DIODE E 1220

Contextual Info: SPD28N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.018 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: SPD 28N03 I nf ine on technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R DS on • Avalanche rated Continuous drain current V 30 0.023 Q A 28 • üv/üt rated

28n03l

Abstract: 28n03 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L Q67040-S4142-A2 a6024
Contextual Info: SPD 28N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

28N03

Abstract: s4140
Contextual Info: SPD 28N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.023 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 28 A • dv/dt rated • 175˚C operating temperature

28N03

Contextual Info: SPD 28N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.023 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 28 A • dv/dt rated • 175˚C operating temperature