S4142 Search Results

Si4392DY

Abstract: Si4392DY-T1
Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 12.5 0.01375 @ VGS = 4.5 V

Si4500BDY

Abstract: Si4500BDY-T1 Si4500
Contextual Info: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3

S-41426-Rev

Abstract: 41426 Si4812DY Si4812DY-T1 s4142
Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY

B-3067

Abstract: ddc b-3067 TST 9007 TST-9017 TST-9002 LP-8018 TR 25679 TST-9000 Series Twin Stacked LM 9014 c TST-9007
Contextual Info: QQQ ILC DATA DEVICE CORPORATION*_ PULSE TRANSFORMERS MIL-STD-1553 TRANSFORMERS FEATURES DESCRIPTION AND APPLICATIONS • The military data bus specification, MIL-STD-1553, has brought about the need for versatile pulse transformers that meet all the electrical

Contextual Info: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3

Contextual Info: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 12.5 0.01375 @ VGS = 4.5 V

S-41427

Abstract: Si7392DP Si7392DP-T1
Contextual Info: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY

37P4

Abstract: NAVIGATION DM N25 GLIDE SLOPE ANTENNA SERIES 37P5 S41422 N252 Collins 37P-4 Types of Radar Antenna GLIDE two element dual frequency antenna 37P-5
Contextual Info: NAVIGATION DM N25 GLIDE SLOPE ANTENNA SERIES MECHANICAL ELECTRICAL SPECIFICATIONS Frequency Range VSWR DM N25-1 DM N25-2 DM N25-3 AT-983 Gain Polarization Impedance 329 – 335.3 MHz 5:1 3:1 3:1 0 dB Horizontal 50 Ohms Weight (0.23 kg) 8 oz (0.39 kg) 14 oz

s4141

Abstract: 2L20 S4140 2S20 DSC1018
Contextual Info: | àt Integrated DeviceTechnology Inc CMOS STATIC RAMS 256K 64K x 4-BIT) Separate Data Inputs and Outputs P R E L IM IN A R Y ID T 7 1 2 8 1 S /L ID T 7 1 2 8 2 S /L FEATURES: DESCRIPTION: • S eparate d ata inp u ts and o utp uts • IDT71281S/L: o utp u ts tra ck Inputs d u rin g w rite m ode

Si4812DY

Abstract: Si4812DY-T1
Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY

Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY

Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6