SPECIFICATION OF CURVE TRACER Search Results

137 742a

Abstract: 1n5802cbus tungsten slug glass diode 1N5806CBUS cbus mil-prf-19500/477 1N5806CB 1N5811CBUS mil-prf-19500/742 1n5804cb
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2009. INCH-POUND MIL-PRF-19500/742A 28 August 2009 SUPERSEDING MIL-PRF-19500/742 1 June 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,

SHARP IR3

Abstract: 1N4942 1N4944 1N4946 1N4947 1N4948 1N5615 1N5617 1N5619 1N5621
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 2 January 2011. INCH-POUND MIL-PRF-19500/359K 2 October 2010 SUPERSEDING MIL-PRF-19500/359J 18 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,

Model 4065

Abstract: 1N5807 ir2175
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 September 2007. MIL-PRF-19500/477H 22 June 2007 SUPERSEDING MIL-PRF-19500/477G 22 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,

Contextual Info: Agilent B1505A Power Device Analyzer/Curve Tracer Data Sheet Introduction The B1505A Power Device Analyzer/ Curve Tracer is a single-box solution with next-generation curve tracer functionality that can accurately evaluate and characterize power devices at up to 10 kV and 1500

477J

Abstract: mil-prf-19500/477 JANTX 1N5811 1N5804URS 1N5807 JANTXV 1N5811URS 1N5802 1N5802US 1N5804 1N5804US
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 April 2009. INCH-POUND MIL-PRF-19500/477J w/AMENDMENT 1 28 January 2009 SUPERSEDING MIL-PRF-19500/477H 14 November 2008 PERFORMANCE SPECIFICATION SHEET

LDMOS

Abstract: AN1226 AN1228
Contextual Info: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic

AN1228

Abstract: "RF MOSFETs" AN1226
Contextual Info: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic

33178

Abstract: 1N5550 1N5550US 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 May 2010. MIL-PRF-19500/420L W/Amendment 1 10 February 2010 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2013. INCH-POUND MIL-PRF-19500/420M 6 September 2013 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

BUT18

Contextual Info: Product specification Philips Semiconductors BUT18; BUT18A Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-22QAB package. APPLICATIONS • Converters • Inverters • Switching regulators

PIN diode SPICE model

Abstract: IBIS Model diode AN012626-2 AN-1111 hyperlynx 620141 JC-16
Contextual Info: National Semiconductor Application Note 1111 Syed B. Huq June 1998 INTRODUCTION With time to market becoming shorter and shorter, system designers are struggling to release a product from concept to reality in a tightly budgeted time. The need to simulate before prototyping is very essential and the ability to simulate

BUW84

Abstract: transistor BUW84
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. APPLICATIONS PIN DESCRIPTION 1 base 2 collector; connected to mounting base

Contextual Info: ESSAIS ELECTRIQUES ET M ECANIQUES NORMALISES STANDARDIZED ELECTRICAL AND MECHANICAL TESTS MODES OPERATOIRES TEST PROCEDURE 8 Durbe de vie en rotation. Pour les potentiomdtres de technologie film plastique, la durbe de vie est spbcifibe en revolutions d'axe h la vitesse de 400 tr/mn ± 50 tr/mn,

BD139 fall time

Abstract: BUX84 bux85 Xpert BD139 bd139 philips BD139 time philips power transistor bd139 power transistor bd139 Philips Bd139
Contextual Info: Product specification Philips Semiconductors BUX84; BUX85 Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in T 0 2 2 0 envelopes, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

BUW84

Abstract: BUW85 70-402 inSOT82 ScansUX40
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 High-voltage, high-speed, glass-passivated npn power transistors in S O T 82 envelopes, intended fo r use in converters, inverters, switching regulators, motor control systems and switching applications.

70123A

Abstract: TOP224 Application Note top227 TOP221 TOP223 TOP222 TOP224 TOP223 application specifications curve tracer top221-224p
Contextual Info: April 1997 TOP221-224P PRODUCT SPECIFICATION Document Number PS026 Customer Name PI Signatory Date Customer Signatory Date W.B. Smith, Dir. QA&R This specification is a controlled document and is distributed to customers. Each customer recipient must acknowledge and register receipt by returning the cover sheet with an authorized signature to the Power Integrations

"RF MOSFETs"

Abstract: AN1226 AN1228
Contextual Info: AN1228 Application note How to relate LMOS device parameters to RF performance Introduction This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic device characteristics. Understanding current laterally

BUW11A

Abstract: d777b BUW11 transistor BU 102
Contextual Info: Product specification Philips Semiconductors BUW11; BUW11A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

TOP227

Abstract: TOP-220 TOP222 TOP221 TOP223 application note specification of curve tracer top223y top227y Top224 TOP222y TOP223
Contextual Info: April 1997 TOP221-227Y PRODUCT SPECIFICATION Document Number Customer Name PS027-001 SONY PI Signatory Date Customer Signatory Date W.B. Smith, Dir. QA&R This specification is a controlled document and is distributed to customers. Each customer recipient must

BUT11A1

Abstract: BUT11A BUT11 0077B BUT-11 But11a data
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BUT18

Abstract: BUT18A ScansUX40
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems, etc.

41ba

Abstract: BUW13AF BUW13F UBC098 sot199
Contextual Info: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.

ZB1702

Abstract: BUW11AF BUW11F ZB1-7 ScansUX40
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

BUW11

Abstract: BUW11A buw11 transistor philips rf transistors buw111
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.