fr diode
Abstract: DIODE JS.6 P-T0251
Contextual Info: SIEMENS SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/df rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type Vps b R DS on Package Ordering Code SPD21N05L 55 V
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spd21n05lspu21n05lp-t0252p-t0251+5q67040s4137--s4131fr diodediode js.6
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P-TO252
Abstract: SPD21N05L SPU21N05L
Contextual Info: SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS on Package Ordering Code SPD21N05L 55 V 20 A 0.07 Ω
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spd21n05lspu21n05lp-to252q67040+3s4137-p-to251s4131
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P-TO252
Abstract: SPD21N05L SPU21N05L
Contextual Info: SPD21N05L SPU21N05L Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD21N05L 55 V 20 A 0.07 Ω
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spd21n05lspu21n05lp-to252q67000-+2p-to25113/nov/1997
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615nvbsp318sbuz mosfetmosfet buz 326+8buz mosfet 334spd14n05mosfet buz 349mosfet buz 90abuz 100 mosfetbup202buz mosfet 102sbuz mosfet 111s
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SPD21N05
Abstract: 21n05l P-TO251-3-1 P-TO252 Q67040-S4131-A2 SPD21N05L SPU21N05L 30e20
Contextual Info: SPD 21N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.04 Ω 20 A • Logic Level • dv/dt rated
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21n05lspd21n05lp-to252q67040-s4137+5spu21n05lp-to251-3-1q67040-s4131-a2spd21n0530e20
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Contextual Info: , • - SPD 21N05L I n f ine o n technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancem ent mode Drain source voltage ^DS Drain-Source on-state resistance f í DS onl Continuous drain current • Avalanche rated b
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21n05lp-t0252q67040-s4137spu21n05l+6p-t0251-3-1q67040-s4131-a2spd21n05ls35bg5q133777sqt-89
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620
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TLE5205 cross
Abstract: tle6205 c167 ecu ECU PWM Throttle Position Sensor TLE6209 Electronic accelerator pedal automotive ecu circuit TLE5206 Different types of PWM ICs
Contextual Info: System Engineering Automotive Application Note Throttle Control with Smart Power Bridges Microcontrollers of the C500 and the C16x-families. and This application note shows different solutions for electronic throttle control with components of Infineon Technologies.
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c16x-familiestle5205 crosstle6205c167 ecu+7ecu pwmthrottle position sensortle6209electronic accelerator pedalautomotive ecu circuittle5206different types of pwm ics
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21n05l
Abstract: P-TO251-3-1 21N05
Contextual Info: SPD 21N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.04 Ω 20 A • Logic Level • dv/dt rated
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21n05lspd21n05lspu21n05lp-to252+4q67040-s4137-a2p-to251-3-1q67040-s4131-a221n05
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615nvot-22320iemensb152-h6493-g5-x-7600+10buz mosfetmosfet buz 326bup 312bss 130bup 304bup 313615n60buz 840sgu06n60bup 307d
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06ssh6n80spb32n03lsmp60n03-10lssp80n06airf540 applicationrfp60n06fsd9933a2sk790irfz30
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