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    SPD21N05

    Abstract: 21n05l P-TO251-3-1 P-TO252 Q67040-S4131-A2 SPD21N05L SPU21N05L 30e20
    Contextual Info: SPD 21N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.04 Ω 20 A • Logic Level • dv/dt rated


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    21n05lspd21n05lp-to252q67040-s4137+5spu21n05lp-to251-3-1q67040-s4131-a2spd21n0530e20 PDF

    Contextual Info: , • - SPD 21N05L I n f ine o n technologies SIPMOS Power Transistor Product Summary Features • N channel • Enhancem ent mode Drain source voltage ^DS Drain-Source on-state resistance f í DS onl Continuous drain current • Avalanche rated b


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    21n05lp-t0252q67040-s4137spu21n05l+6p-t0251-3-1q67040-s4131-a2spd21n05ls35bg5q133777sqt-89 PDF

    21n05l

    Abstract: P-TO251-3-1 21N05
    Contextual Info: SPD 21N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.04 Ω 20 A • Logic Level • dv/dt rated


    Original
    21n05lspd21n05lspu21n05lp-to252+4q67040-s4137-a2p-to251-3-1q67040-s4131-a221n05 PDF