SP00021 Search Results

2n0404

Contextual Info: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

12N50C3

Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated

PN04L03

Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

4141N

Abstract: SP000219536 ITS4141N GPS05560 scr short circuit
Contextual Info: ITS 4141N Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ 47 V • Current limitation Operating voltage Vbb(on) 12.45 V • Overload protection

2N04L03

Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2n0607

Abstract: 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818
Contextual Info: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

N60C3

Abstract: SPP03N60C3
Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\

D8172

Abstract: 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP
Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge

11n80c3

Abstract: SPA11N80C3
Contextual Info: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances

TRANSISTOR 15n60c3

Contextual Info: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU VDS#Tjmax  9 5'6 RQ  Ω ,'  $ HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH 3G721 • 3HULRGLFDYDODQFKHUDWHG 3G72 • [WUHPHGYGWUDWHG • 8OWUDORZHIIHFWLYHFDSDFLWDQFHV

3G72-31

Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72-31 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\

20N65C3

Abstract: 20n65 SPP20N65C3 20N65C
Contextual Info: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1

transistor df 331

Abstract: d39 marking
Contextual Info: SPA06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • High peak current capability • Ultra low effective capacitances

Contextual Info: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\

21n50c3

Abstract: PG-TO220FP spp21n50c3
Contextual Info: SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P G-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated

sp*20n60c3

Abstract: spp20n60 spp20n60c3
Contextual Info: 6331& 63,1&63$1& &RRO026Œ 3RZHU7UDQVLVWRU VDS#Tjmax  9 5'6 RQ  Ω ,'  $ HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •:RUOGZLGHEHVW5 '6 RQ LQ72 •8OWUDORZJDWHFKDUJH 3G721 3G723 3G-TO220

2n0607

Abstract: 2n0607 equivalent IPB80N06S2-07 IPI80N06S2-07 IPP80N06S2-07 PG-TO263-3-2 SP000218810 d68 smd code
Contextual Info: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N06L11

Abstract: TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104
Contextual Info: IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V DS 55 V • N-channel Logic Level - Enhancement mode R DS on ,max (SMD version) 10.7 mW • Automotive AEC Q101 qualified ID 80 A • MSL1 up to 260°C peak reflow

2n0605

Abstract: IPP80N06S2-05 ANPS071E IPB80N06S2-05 PG-TO263-3-2 DD44
Contextual Info: IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

20n65c3

Abstract: S4560 20N65 SPA20N65C3 SPI20N65C3 SPP20N65C3
Contextual Info: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated

11n60cfd

Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172
Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge

Contextual Info: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature V DS RDS on 650 V 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 PG-TO262 • Ultra low gate charge PG-TO220FP PG-TO220 • Periodic avalanche rated

DF 331 TRANSISTOR

Abstract: d207
Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 " I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge