HSMS-285x model
Abstract: HSMS-285X marking code e6 sot363 AN1124 HSMS-2850 SOT143 Marking A1 PIN DIODE MARKING CODE AB SOT Packaged A1 4 PIN sot-23 Marking B1 HSMS-286* reliability
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Demonstration Circuit Boards > DEMO-HSMS285-0 DEMO-HSMS285-0 Demonstration circuit board for HSMS-2850, HSMS-2852 and HSMS-2855 Description Lifecycle status: Active Features 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode
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demo-hsms285-0hsms-2850hsms-2852hsms-2855+11ot-23ot-143hsms-285x modelhsms-285xmarking code e6 sot363an1124sot143 marking a1pin diode marking code absot packaged a1 4 pinsot-23 marking b1hsms-286* reliability
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DIN 6784
Abstract: BAS140W 47S MARKING
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W ! , BAS40-06 BAS40-06W !
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bas40/bas140wbas140wbas40-02l+7bas40-04bas40-05bas40-05wbas40-06bas40-06wdin 678447s marking
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egs SOT23
Abstract: BC817K-40 thermal resistance
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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bc817bc818bc807bc808+8bc817-16bc817k-16bc817-25bc817k-25bc817-25wbc817k-25wegs sot23bc817k-40 thermal resistance
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45s MARKING CODE
Abstract: bas16 sot143
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W ! , BAS40-06 BAS40-06W !
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bas40/bas140wbas140wbas40-02l+7bas40-04bas40-05bas40-05wbas40-06bas40-06w45s marking codebas16 sot143
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6CS transistor
Abstract: transistor 6cs
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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bc817bc818bc807bc808+8bc817-16bc817-25bc817-25wbc817-40bc817-40wbc818-16w6cs transistortransistor 6cs
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marking code 76s
Abstract: BAS70-07W BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s E6327 Application
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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bas70bas170wbas70-02lbas70-02w+9bas70-04bas70-04wbas70-04sbas70-05marking code 76sbas70-07wmarking 74smarking 77se6327 application
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66s marking
Abstract: sot323 marking code A.C BAT 62 E6327
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W
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bat64bat64-02vbat64-02wbat64-04+8bat64-04tbat64-04wbat64-05bat64-05wbat64-0666s markingsot323 marking code a.cbat 62 e6327
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INFINEON diode MARK 22
Abstract: marking code TS marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s bas16 infineon top marking code
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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bas70bas170wbas70-02lbas70-02w+10bas70-04bas70-04wbas70-04sbas70-05infineon diode mark 22marking code tsmarking code 76smarking 74smarking 77sbas16 infineon top marking code
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MARKING CODE 21E SOT23
Abstract: BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23
Contextual Info: BC846.BC850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856, BC857, BC858 BC859, BC860 PNP
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bc846bc850bc856bc857+16bc858bc859bc860vps05161bc846abc846bmarking code 21e sot23bc847c e6433npn bc846b sot23bc846b e6327power 22e1fs sot23marking code 1bs1gs sot23din 6784mv sot23
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STS 75 SOT23
Abstract: marking BSs sot23 E6327 Q62702-S612 STS SOT
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● VDS 250 V ● ID 0.04 A ● RDS on 100 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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q62702-s612e6327ot-23sts 75 sot23+2marking bss sot23sts sot
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02LRH
Abstract: BAR64-03W bar6403w e6327
Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)
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bar64bar64-02lbar64-02lrhbar64-02v+8bar64-03wbar64-04bar64-04wbar64-05bar64-05wbar64-0602lrhbar6403w e6327
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ESDOP2RF-02LRH E6327
Contextual Info: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)
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bar64bar64-02lrhbar64-02vbar64-03w+7bar64-04bar64-04wbar64-05bar64-05wbar64-06bar64-06wesdop2rf-02lrh e6327
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DIN 6784
Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1
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bas70bas170wbas70-02lbas70-02w+10bas70-04bas70-04wbas70-04sbas70-05din 6784marking code tsdiode mark sot23 4xmarking code 76smarking 74smarking 77s
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DIN 6784
Abstract: SOt323 marking code 6X
Contextual Info: BAT68. Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications BAT68 BAT68-04 BAT68-04W ! ! , BAT68-06 BAT68-06W BAT68-07W ! , , " $ ! , , BAT68-08S " # , , , , ! ! ESD: Electrostatic discharge sensitive device, observe handling precaution!
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bat68bat68-04bat68-04wbat68-06+5bat68-06wbat68-07wbat68-08sdin 6784sot323 marking code 6x
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marking EA SOT23
Abstract: marking code w2 sot23 MARKING W2 SOT23 AP1703B marking code E5 sot23 AP1704GW w3 sot23 sot23 marking code transistor sc59 marking marking code 4D
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN, USE APX809/810 AP1701/2/3/4 3-PIN MICROPROCESSOR RESET CIRCUITS General Description Features • • • The AP1701/2/3/4 are used for microprocessor (µP) supervisory circuits to monitor the power supplies in µP and digital systems.
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apx809/810ap1701/2/3/4ap1701/3ap1702/4+11200msmarking ea sot23marking code w2 sot23marking w2 sot23ap1703bmarking code e5 sot23ap1704gww3 sot23sot23 marking codetransistor sc59 markingmarking code 4d
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e7941
Abstract: Q67000-S221 E6327 Q62702-S612
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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q62702-s612e6327ot-23q67000-s221+1e7941
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E6327
Abstract: E7941 Q62702-S612 Q67000-S221 STS SOT
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 139 VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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q62702-s612e6327ot-23q67000-s221+2e7941sts sot
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marking CODE 1BS
Abstract: BC846 Infineon BC846-BC850 NA MARKING SOT23 NPN BC846B SOT23 BC846B E6327 BC857 st MV SOT23 BC857 BC858
Contextual Info: BC846.BC850 NPN Silicon AF Transistors For AF input stages and driver applications High current gain 3 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type
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bc846bc850bc856bc857+14bc858bc859bc860bc846abc846bbc847amarking code 1bsbc846 infineonbc846-bc850na marking sot23npn bc846b sot23bc846b e6327bc857 stmv sot23
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915 MHz RFID
Abstract: marking code e6 sot363 Marking Code ABC marking code PB surface mount diode marking code tc sot 363 METAL DETECTOR circuit for make SCHOTTKY DIODE SOT-143 HSMS2850 HSMS285B HSMS-285C
Contextual Info: Surface Mount Zero Bias Schottky Detector Diodes Technical Data HSMS-285x Series Features • Surface Mount SOT-23/ SOT-143 Packages SOT-23/SOT-143 Package Lead Code Identification top view • Miniature SOT-323 and SOT-363 Packages SINGLE 3 SERIES 3 1 1
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hsms-285xot-23/ot-143ot-23/sot-143+14ot-323ot-363c70-3sc70-6915 mhz rfidmarking code e6 sot363marking code abcmarking code pb surface mount diodemarking code tc sot 363metal detector circuit for makeschottky diode sot-143hsms2850hsms285bhsms-285c
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BAR63-05
Abstract: BAR63-02L BAR63-02V
Contextual Info: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05
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bar63bar63-02bar63-03wbar63-04+8bar63-04wbar63-05bar63-05wbar63-06bar63-06wbar63-07l4bar63-02lbar63-02v
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DAS SOT23
Abstract: DBS SOT23 MARKING CODE
Contextual Info: BCW67, BCW68 PNP Silicon AF Transistors 3 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 NPN 2 1 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B
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bcw67bcw68bcw65bcw66+8vps05161bcw67abcw67bbcw67cbcw68fbcw68gdas sot23dbs sot23 marking code
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HSMS-285x model
Abstract: ZERO Bias diode marking code e1 DIODE microstrip RFID tag agilent model marking code marking code e6 sot363 HSMS-285C
Contextual Info: Surface Mount Zero Bias Schottky Detector Diodes Technical Data HSMS-285x Series Features • Surface Mount SOT-23/ SOT-143 Packages SOT-23/SOT-143 Package Lead Code Identification top view • Miniature SOT-323 and SOT-363 Packages SINGLE 3 SERIES 3 1 1
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hsms-285xot-23/ot-143ot-323+11ot-363ot-23/sot-1435989-0479en5989-2494enhsms-285x modelzero bias diodemarking code e1 diodemicrostrip rfid tagagilent model marking codemarking code e6 sot363hsms-285c
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BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1
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diode 8255
Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
Contextual Info: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0
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b8250b-8250diode 8255linear marking+88253/8254marking e6 sot268251 crossc5 marking code sot-323diode bay 80sot-23-3 c6marking c3 sot-323diode c4z
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