SOT161 Search Results

Contextual Info: SOT161A CDFM8; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 18 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning

jedec 0402

Abstract: u21a diode w3 sot161a
Contextual Info: PDF: 1999 Oct 07 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 8 leads SOT161A D A F D1 U1 B q C H1 w2 M C M c b 2 H 4 6 8 E1 U2 1 A 3 5 7 E w1 M A M B M p Q w3 M b1 e1 e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

BLV57

Abstract: mexico Ceramic capacitor 105 RF push pull power amplifier UHF POWER TRANSISTOR MGP365
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV57 UHF linear push-pull power transistor Product specification Supersedes data of August 1986 1998 Feb 09 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV57 PINNING - SOT161A

BLF246B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

BLF246B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

AgCu28

Contextual Info: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

SOT-123

Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Contextual Info: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0

an10133

Abstract: capacitor 100nf 16v x7r 10 1005 murata TEA5767/68 Garage Door Opener remote circuit diagrams philips rf manual balanced modulator ic 1496 2.4GHz Cordless Phone circuit diagram A case 10uf (10v) ±20% Chip Tantal TEA5767 working principle scanner block diagram
Contextual Info: Philips RF Manual product & design manual for RF small signal discretes 3rd edition July 2003 APPENDIX / documentation/rf_manual Document number: 4322 252 06385 Date of release: July 2003

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE • D bbS3T31 D D E ^ D ll L APX T IE BLV36 VHF LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is primarily intended for use in linear VHF television transmitters and transposers vision or

BLV36

Contextual Info: L/^ioaucti, LJnc. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U'SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV36 VHP LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier.

865 RF transistor

Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm

745F1270BK00J

Abstract: BLU52
Contextual Info: N AMER PHILIPS/DISCRETE 860 ObE D 01126 bbS3T31 0D133fc,4 4 D T -3 3 -/3 ^ V.H.F./U.H.F. P U SH -P U LL BLU 52 P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 M H z range.

KELTRON

Abstract: b0949 B0539 sot6001 2SC2516M B0123 2n5978
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 . 30 2S01667 2S01904 2SC25620 IOC2562 IOC3299 SOT9011 SOT9011 SOT9011 ~~t:J62Y 35 40 2S01395 SML1612A SML1622A SML1632A SMl1642 SML1652 SML1662 SML7412 ~~tj:~~ 45 50 55 60 SML3402 SML3422 SML85502 SML85507

100-400MHz

Abstract: 2N6362 UHF TRANSISTOR
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

Contextual Info: DISCRETE SEMICONDUCTORS DAT andbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF246B PIN CONFIGURATION

TPV-375

Abstract: transistor TPV375 TPV375 transposers
Contextual Info: GAE GREAT AMERICAN ELECTROINCS TPV-375 Silicon NPN power transistor TPV-375 is designed for construction of power amplifiers with a common amplifier channel for signals of picture and sound in Band III TV transposers and transmitters. Output Power: Frequency Range:

l17c

Abstract: 727 Transistor power values BLF246B
Contextual Info: DISCRETE SEMICONDUCTORS 0 Â T Â Sin] H T BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 Philips Semiconductors 2000 Feb 04 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 1999 Jan 28 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

PT8828

Abstract: sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094
Contextual Info: RF POWER SILICON NPN Item Part Number Number I C 5 10 >= 2.5 A, 2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 2S01724 2S01815 2N3928 2N3929 ~~g~i~4 15 20 S01222-5 2N5642 2SC1306 2SC1306 SK3529 2SC585 2SC636 BLX13 ~t~~~~ 25 30 BlY93A J03020 BlX13C BlW83 BlY93C

MRF212

Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413