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    2N4226 Search Results

    2N4226 Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N4226
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 63.45KB 1
    2N4226
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.85KB 1
    2N4226
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 97.18KB 1
    2N4226
    Unknown Vintage Transistor Datasheets Scan PDF 52.82KB 1
    2N4226
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 105.83KB 1
    2N4226
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 86.69KB 1
    2N4226
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 49KB 1
    2N4226
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 162.25KB 1
    2N4226
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 162.78KB 1
    2N4226
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 75.43KB 1
    2N4226
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.09KB 1
    2N4226
    Semico NPN Silicon Power Transistors Scan PDF 174.97KB 1
    2N4226
    Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF 114.85KB 2
    2N4226
    Solitron Devices 3 Amp NPN Power Transistors Scan PDF 330.2KB 4

    2N4226 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PT8828

    Abstract: sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094
    Contextual Info: RF POWER SILICON NPN Item Part Number Number I C 5 10 >= 2.5 A, 2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 2S01724 2S01815 2N3928 2N3929 ~~g~i~4 15 20 S01222-5 2N5642 2SC1306 2SC1306 SK3529 2SC585 2SC636 BLX13 ~t~~~~ 25 30 BlY93A J03020 BlX13C BlW83 BlY93C


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    2sc13982s018022n42262sc2078+152sc19092sc3294o-220o-220varo-22ovarpt8828sot123 packagekt922g2sc1239sgsf324motorola 2n4932bly93as0122j030202sc2094 PDF

    2N4225

    Abstract: Solidev 2N4226 ic 4588 34164 Solitron Transistor
    Contextual Info: ° , 8368602 SOL ITRON DEVICES INC - S0LITR0N DEVICES INC ~ kïi DE | flHbflbDE 00DlHci4 L | ~ ^ O l i t r o n DEVICES, INC. T R A N S IS T O R L /g* D IV IS IO N 2N4225 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLA. 33404 * <305 848-4311 P 3 2N4226 KPN POWER TRANSISTORS


    OCR Scan
    2n42252n4226solidevic 4588+234164solitron transistor PDF

    2N1718

    Abstract: 2N1720 2N1714
    Contextual Info: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


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    2n17182n17202n1714 PDF

    2N1718

    Abstract: 2N1720 2N3665 SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716
    Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


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    2n12522n12532n15062n1506a+72n17142n17162n1718mt-132n17202n3665sdt5052 PDF

    2N3016

    Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
    Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


    OCR Scan
    2n12522n12532n15062n1506a+72n17142n17162n1718mt-132n17202n3016sdt5052 PDF

    2N1720

    Abstract: 2N1718 2N1714 2N2992 2N486
    Contextual Info: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


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    2n17202n17182n17142n2992+12n486 PDF

    2n3223

    Abstract: 2N3543 2N3222 2N2632 2k4075
    Contextual Info: 81 3 4 6 9 3 S E M I C O A 40 D E | fll34bT3 □ □ □ D I E S 1 1 ^ 2 7 - 0 / NPN SILICON POWER TRANSISTORS Electrical Characteristics @ 25°C Maximum Ratings Device Type No. NPN Dissipation @ 25°C Case Watts (Cont.) Amps VCB Volts VCE Volts 2N3595 2N3596


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    2n35952n35962n56622n5660+92n3917to-662n39182n32222n32232n28902n35432n26322k4075 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    2n1720

    Abstract: 2N1716 N2989 2N1718 2N1252 2N3665 2N5682 MT-13 2N2993 2N4001
    Contextual Info: high-rei power transistors 77 SILICON NPN TRANSISTORS 2 Amp BREAKDOWN VOLTAGE I TYPE NUMBER CASE SIZE 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 N2988 N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666


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    2n12522n12532n15062n1506a+122n17142n17162n17182n17202n18892n1890n29892n36652n5682mt-132n29932n4001 PDF

    2N3666

    Contextual Info: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


    Original
    sphv405sphv406sphv407sphv408+7sphv409sphv420sphv421sphv422sphv423sphv4242n3666 PDF