SOT143 FET Search Results

transistor marking M04 GHZ

Abstract: m04 marking dual-gate
Contextual Info: Short-form preliminary specification Philips Sem iconductors Dual-gate MOS-FET BF904; BF904R FEATURES DESCRIPTION • Specially designed for use at 5 V supply voltage Enhancement type field-effect transistors in plastic micro-miniature SOT143 and SOT143R envelopes.

Contextual Info: Short-form product specification Philips Semiconductors BF990A Silicon N-channel dual-gate MOS-FET APPLICATIONS • UHF applications such as television tuners with 12 V supply voltage, and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143

Contextual Info: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.

mosfet marking code gg

Abstract: marking g1s marking code g1s
Contextual Info: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

Contextual Info: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and

Philips MARKING CODE

Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked

Contextual Info: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.

Contextual Info: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.

Contextual Info: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television

Contextual Info: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

marking code 11G1

Contextual Info: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.

marking code 11G1

Contextual Info: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V

BF991

Abstract: G2S-50
Contextual Info: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

fet dual gate sot143

Abstract: BF990A FET MARKING CODE marking Z7 mosfet depletion 10 marking code dual transistor
Contextual Info: BF990A P H I L IPS INTERNATIONAL_ SbE D Bi 7110flSti 0034070 5T7 M P H I N FOR D E TA ILE D INFO R M A TIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET T-35-Z 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and

FM02

Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
Contextual Info: L3E D • 1^53*124 D 0 7 4 3 1 1 MES H S I C 3 B F996S NAPC/PHILIPS SEHICON] FOR D E T A ILE D IN F O R M A TIO N SEE THE LATEST ISSUE OF HAN DBO O K SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and

SMD CODE MARKING s7 SOT23

Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes

sot-23 Marking M6

Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
Contextual Info: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes

m8p smd

Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
Contextual Info: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci­ tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own

38mm2

Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
Contextual Info: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

F1313

Abstract: F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701
Contextual Info: MMICs an d FETs C o m m u n ic a tio n s 5 V A m p l if ie r s and M ix e r s Supply Part Number KGF1145 Description KGF1146 Output Power Idd> 4 /S O P VCO buffer, limiting amp, small signal, self-biased KGF1155B signal m ixer amp 4 /S O P signal m ixer amp

ComChip Date code

Abstract: smd DIODE code marking 20A sot143 Marking code p1 tlp 241 marking code 62 6 pin SMD IEC61000-4-4 SOT14 smd diode marking code 143 sot143 fet smd diode 319
Contextual Info: Low Capacitance ESD Protection Array SMD Diodes Specialist CSRS045V0P RoHs Device Features SOT-143 ESD Protected for 2 high speed I/O ports 0.119 3.00 0.110(2.80) IEC61000-4-2 (ESD) ±8kV (Contact) ,±15kV(Air). IEC61000-4-4 (FET)(5/50ns) Level-3, 20A for I/O