SOT14 Search Results

Contextual Info: Miniature Surface Mount Fixed Attenuator 50Ω 0.5W 5dB DC to 2500 MHz Maximum Ratings Features Operating Temperature Storage Temperature LAT-5+ • wideband, DC to 2500 MHz • excellent VSWR, through entire band • miniature size, SOT143 package • aqueous washable

ir transmitter receiver

Abstract: NPN planar RF transistor 4311B U2535B RF amplifier SOT23 5 IC for IR receiver fm transmitter dip 200 hn ir remote decoder IC rf transmitter receiver
Contextual Info: Tem ic Semiconductors # * SOT23 SOT143 S08 DIP16 ► SOK SS028 Remote Control/ Keyless Entry ICs Part Number Function Key Features Package Source IR Transmitter / Receiver BPV23NF PIN diode see Opto section IR photo detector, 875 to 950 nm, sensitivity typical 65 |UA

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of plastic surface-mounted package; 4 leads SOT143B 3.25 0.6 3x 0.5 (3×) 1.9 0.7 0.6 (3×) (3×) 2 0.7 0.6 solder land solder paste deposit 0.75 solder land plus solder paste 0.95 0.9

LAT-30

Abstract: TB 2939 PL-225 TB-39
Contextual Info: Miniature Surface Mount Fixed Attenuator 50Ω 0.5W 30dB DC to 2500 MHz Maximum Ratings Features Operating Temperature Storage Temperature LAT-30+ • wideband, DC to 1000 MHz • excellent VSWR, through entire band • miniature size, SOT143 package • aqueous washable

Contextual Info: Direction Of Feed O 0|0j0|0|0|0|0 Polarized Components □DODDODD Direction Of Feed o o o • o o o mm Bm mSmm m Tjgjl □ □ □ H SOT143 SOT25 1, . igg igj vg g g \ $ S J O O O O Q~Ol \o O O o1 SOT23 Crystal )Q Cathode O /o"5 Melf &SOD80 o ooooo G O O

Contextual Info: SOT143 SOT143 Surface Mount 4-PIN SMT Package Resistor Networks SOT143 Surface Mount SOT143 Series Resistor SOT143 Series • Ratio tolerancesNetworks to ±0.05% s s s s · · · Ratio tolerances to ±0.05% Standard and custom circuits available Small, industry

BAT74

Abstract: BAT74L41
Contextual Info: BAT74 Schottky barrier double diode Rev. 03 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B

BAS28 nxp

Abstract: BAS28 diode Marking code v3
Contextual Info: BAS28 High-speed double diode Rev. 3 — 22 July 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not

KS113

Abstract: THS126 HG106C ksy13 LT140A THS124, Toshiba THS117 HW-105 THS119 SOT143
Contextual Info: Cross Reference Linear Analog Hall Elements Vendor Infineon Asahi Sharp Toshiba Part No Type Size mm Nominal supply (mA) Hall voltage @0.1T (mV) 2,9 1,4 1,1 5 120 Package KSY 13 GaAs KSY 13-2 KS113 HW101A InSb HW105C HZ302H InAs HZ106/302C SOT143 SOT143*

AN11436

Contextual Info: 62 7  % BFU530X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: Package outline DIP20: plastic dual in-line package; 20 leads 300 mil SOT146-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 11 20 pin 1 index E 1 10 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max.

Contextual Info: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: Package outline Plastic surface-mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 1 c 2 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

GCDA15C

Contextual Info: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour

804 L 083

Contextual Info: LAT-8+ LAT-8 Miniature Surface Mount Fixed Attenuator 50Ω 0.5W 8dB DC to 2500 MHz Maximum Ratings Features Operating Temperature • wideband, DC to 2500 MHz • excellent VSWR, through entire band • miniature size, SOT143 package • aqueous washable

LAT-0

Contextual Info: LAT-0+ LAT-0 Miniature Surface Mount Fixed Attenuator 50Ω 0.5W 0dB DC to 2500 MHz Maximum Ratings Features Operating Temperature • wideband, DC to 2500 MHz • excellent VSWR, through entire band • miniature size, SOT143 package • aqueous washable

K1LAT

Abstract: LAT-6
Contextual Info: LAT-6+ LAT-6 Miniature Surface Mount Fixed Attenuator 50Ω 0.5W 6dB DC to 2500 MHz Maximum Ratings Features Operating Temperature • wideband, DC to 2500 MHz • excellent VSWR, through entire band • miniature size, SOT143 package • aqueous washable

mosfet marking code gg

Abstract: marking g1s marking code g1s
Contextual Info: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

bh32

Abstract: bH-36 M208D BMH76 M208A BH158AM BH147
Contextual Info: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / M ICRO STRIP A22e SMD3 BH15 BH28 SMD4 BH16 BH32 SMD6 BH36 BH35 SMD8 BH100 BH142a SOD323 BH101 BH142b SOT23 BH143 BH142c SOT143 BH146 BH147 BH142d POWER

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

Contextual Info: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

Marking G1s

Contextual Info: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF

Contextual Info: bb-53^31 DD3EE15 T^7 Hi APX Philips Sem iconductors Product specification NPN 9 GHz wideband transistor X3A-BFR505 crystal N A PIER PHILIPS/DISCRETE b^E » DESCRIPTION MECHANICAL DATA NPN crystal used in BFR505 SOT23 , BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied