SOT-23-5 MARKING H Search Results

KMB4D0N30SA

Abstract: JB Sot23 H8 SOT-23
Contextual Info: SEMICONDUCTOR KMB4D0N30SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. ① ② KNA 5 1 2. Marking 2 Item Marking Description Device Mark KNA KMB4D0N30SA - - - * Lot No. 51 2006. 51 Week [0:1st Character, 8:2nd Character] Note * Lot No. marking method

BC807

Contextual Info: SEMICONDUCTOR BC807 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 5A 1 2 Item Marking Description Device Mark 5 BC807 hFE Grade A 16 A , 25(B), 40(C) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

CS3113

Contextual Info: CS3113 Revision History Rev. No. History Issue Date 1.0 New issue Sep. 10,2012 Add Current Limit=300mA Min. Delete TSOT-23-5 Package 1.1 Add SOT-23-5 Package May.13.2013 Modify Ordering information and Marking information Add Application Information

Contextual Info: CS3111 Revision History Rev. No. History Issue Date 1.0 New issue Sep. 10,2012 Add Current Limit=300mA Min. Delete TSOT-23-5 Package 1.1 Add SOT-23-5 Package May. 13,2013 Modify Ordering information and Marking information Add Application Information

UTC "MARKING code"

Abstract: oscilloscope 8120 QW-R119-001 81XX marking 8150 UTC voltage UTC8131 marking code cl linear marking code utc 8140
Contextual Info: UTC 81XX LINEAR INTEGRATED CIRCUIT MARKING INFORMATION PACKAGE PIN CODE PIN 1 PIN 2 PIN 3 PIN4 PIN 5 2 VCC VOUT GND - - MARKING 3 SOT-23 DATE CODE VOLTAGE CODE 3 VOUT GND VCC - - 5 GND VOUT VCC - - A NC NC GND VOUT VCC PIN CODE 2 3 SOT-25 1 2 1 DATE

sot 23 70.2

Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Contextual Info: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code

DIODE WJ SOt23

Abstract: 7.a sot-23 marking BSs sot23
Contextual Info: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on

7002 SOT23

Abstract: BS170 D 92 M - 03 DIODE bs 170 marking BS SOT23 MARKING SSG SOT23 marking code SN sot23 7002 n channel marking BS 7002
Contextual Info: SIEMENS SIPMOS Small-Signal Transistors VDS lD = 60 V = 0 . 1 9 . . . 0.3 A ^ D S o n = 5 .0 N channel • Enhancement mode TO -92 (SN 7 0 0 0 /B S 170) SOT-23 (SN 70 02) Packages: G 1 TO-92, SOT-23 ') Type B S 170 Û • • SN 7000 SN 7002 Marking Ordering code

KSA640

Abstract: KSP4250A
Contextual Info: FUNCTION GUIDE TRANSISTORS 1.2 Low Noise Transistors 1.2.1 SOT-23 Type Transistors Condition NF dB Device and Polarity (Marking) Condition Frequency Condition hFE VCE(satXV) •b (mA) MIN MAX lc (mA) KST6428(1 K) 4 Audio 50 0.2 5 0.1 250 650 100 5 KST2484(1U)

IC104

Contextual Info: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5

N5089

Abstract: N5088 ksp-65
Contextual Info: TRANSISTORS FUNCTION GUIDE 1.2 LOW Noise Transistors 1.2.1 SOT-23 Typ« Transistors NF dB Device and Polarity {Marking) hFE Condition Condition VcEO lc V« Condition Max Frequency (V) (A) (V) MIN MAX (mA) Ib (mA) KST6428(1K) 4 Audio 50 02 5 0.1 250 650 100

Contextual Info: SMBD 6050 Silicon Switching Diode For high-speed switching applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8-m m tape Package SMBD 6 0 5 0 S5A upon request upon request SOT 23 M axim um ratings Param eter Symbol Reverse voltage

Contextual Info: EDB Schottky Diode ESD Suppressor Package SOT – 23-6 Schematic: 4 3 5 2 6 1 Marking “ EDB “ Characteristics: ( Ta = 25oC ) Symbol Characteristic VBD Diode Brakdown Voltage IL Leakage current CT Capacitance VESD Channel clamp voltage VPV Peak ESD voltage capability

150X1

Contextual Info: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

L6 marking 5-pin

Abstract: BAR 17
Contextual Info: Silicon PIN Diodes BAR 17 »Current-controlled RF resistor for RF attenuation i Switching applications above 1 MHz Type Marking Ordering code tape and reel Pin configuration Package BAR 17 L6 Q 62702-A 7 8 5 1o- f» -o3 SOT-23 Maximum Ratings Parameter

Contextual Info: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings

Contextual Info: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking

sot23 material composition

Abstract: sot23 "material composition" TR13
Contextual Info: Package Details - SOT-23 Mechanical Drawing Lead Code: Part Marking: 2-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-November 2007)

SSN SOT-23

Abstract: sot-23 ssn L6327 SN7002N PG-SOT-23
Contextual Info: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking

RB425D

Contextual Info: RB425D SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L

1403

Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.

DZ23C9V1

Abstract: DZ23C27
Contextual Info: DUAL ZENER DIODES COMMON CATHODE, 300mW DZ23 SERIES CASE TYPE: T0-23BAB (SOT-23) % Dynamic Resistance Zener Vottage<1> at lz = 5mA Type Marking at Iz -S m A f = 1 kHz VzV rz) Q at lz = 1 mA 1= 1 kHz rz] Q Tamp, Eoaff. of Zener Voltage at lz » 5 mA « V Z H I—4/K

MARKING SSG SOT23

Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002
Contextual Info: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information