SOT-23 TAW Search Results

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

BA101D

Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

AAKW

Abstract: AALN UTP025 UTP015
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches The MAX6505–MAX6508 temperature switches have dual logic outputs that assert when the die temperature crosses their trip thresholds. Trip thresholds are factory programmed to convenient temperatures in 5°C increments.

AAKW

Abstract: AAME MARK A5 SOT23-6 MAX6505 MAX6506 MAX6507 MAX6508 MAX6505UTP000 UTP01 5C SOT23-6
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches _Applications µP Temperature Monitoring in High-Speed Computers Temperature Control Features ♦ ±0.5°C typ Threshold Accuracy Over Full Temperature Range ♦ No External Components Required

aakW

Abstract: MAX6505 MAX6506 MAX6507 MAX6508 UTP100 MAX6505UTP000 UTP025
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches _Applications µP Temperature Monitoring in High-Speed Computers Temperature Control Features ♦ ±0.5°C typ Threshold Accuracy Over Full Temperature Range ♦ No External Components Required

aakW

Abstract: aali Aaks AALN MAX6507 UTP015 MAX6505 MAX6506 MAX6508 UTN015
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches The MAX6505–MAX6508 temperature switches have dual logic outputs that assert when the die temperature crosses their trip thresholds. Trip thresholds are factory programmed to convenient temperatures in 5°C increments.

AAKW

Abstract: UTP100 aaks MAX6505 MAX6506 MAX6507 MAX6508 UTN005 MAX6505UTP000
Contextual Info: 19-1712; Rev 1; 2/11 Dual Trip SOT Temperature Switches The MAX6505–MAX6508 temperature switches have dual logic outputs that assert when the die temperature crosses their trip thresholds. Trip thresholds are factory programmed to convenient temperatures in 5°C increments.

MARK A5 SOT23-6

Abstract: 21-0058I SOT23-6 POWER SUPPLY sot 23 mark 64 SOT-23 AAKS MAX6505UTP000 A0 SOT23-6 MAX6506UTP000 5F SOT23-6 20 SOT23-6
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches _Applications µP Temperature Monitoring in High-Speed Computers Temperature Control Features ♦ ±0.5°C typ Threshold Accuracy Over Full Temperature Range ♦ No External Components Required

A102

Abstract: APL9131 APX9131 STD-020C TO92 hall effect SOT23 A7
Contextual Info: APX9131 Hall Effect Micro Switch IC Features General Description • • • The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to 3.5 volt operation and a unique clocking scheme reduce the average operating power

SOT-23 Rod

Abstract: AO SOT-23 A102 APX9132 sot23 marked rod
Contextual Info: APX9132 Hall Effect Micro Switch IC Features General Description • • • The APX9132 integrated circ uit is an ultra-sensit ive, • • Micro Power Operation for Battery Applications pole independent Hall-effect switch with a latched Chopper Stabilized Amplifier

80C51

Abstract: 80C652 83C652 s87c652-4f40 5K4-4 Q590 p80c652fba s87c652
Contextual Info: Phlips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION 80C652/83C652 PIN CONFIGURATIONS The P80C652/83C652 Single-Chip 8-Bit Microcontroller Is manufactured in an advanced CMOS process and is a derivative

Contextual Info: Philips Semiconductora Product «pacification Octal transceiver with parity generator/checker 3-State . _ 74ABT657 The Output Enable (OE) input disables both the A and B ports by placing them in a high impedance condition when the OE input is High. The parity select (ODD/EVEN) input gives the user the option

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

pcf80c31bh

Contextual Info: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION 80C31/80C51/87C51 PIN CONFIGURATIONS The Philips 80C31/80C51/87C51 is a high-performance microcontroller fabricated with Philips high-density CMOS technology. The CMOS 8XC51 is functionally compatible with the

Contextual Info: HY5116800 Series • H Y UN D A I 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: i N ational Semiconductor Comlinear CLC406 Wideband, Low Power Monolithic Op Amp General Description Features The CLC406 is a wideband monolithic operational amplifier designed for low-gain applications where power and cost are of primary concern. Operating from ±5V supplies, the CLC406 consumes only 50mW of

DQ12E

Contextual Info: Target CMOS DRAM KM432V504, KM432V524 512Kx32Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x32 bit Extended Data Out CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Refresh cycle

SOT 23 A6 on

Contextual Info: APX9131 Hall Effect Micro Switch IC Features General Description • • • The APX9131 integrated circuit is an ultra-sensitive, pole independent Hall-effect switch with a latched digital output. 2.5 volt to 3.5 volt operation and a unique clocking scheme reduce the average operating power

Contextual Info: O K I Semiconductor MSM5117405A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405A is a4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117405A achieves high integration, high-speed operation, and low-power

Contextual Info: N N 5 1 V 1 6 1 6 5 A / N N 5 1 V 1 8 1 6 5 A E D O s e r ie s H y p e r P a g e M o d e C M O S 1M x x N P N w i W l 1 6 b it D y n a m ic R A M Preliminary Specification d e s c rip tio n The NN51V16165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga­

rca 101m

Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

LH52B256HN-90LL

Abstract: H4082 LH52B256H LH52B256HN90LL cv60
Contextual Info: S H A R P LH52B5HN 1 C ontents 1. General Description. 2 2. Pi n Configuration. 2 3. Operating M o d e . 3 4. Block Diagram .