SOT-23 R 25 Search Results

MARKING JW SOT-23

Contextual Info: r r u n m _ LT1460S3-5 SOT-23 TECHNOLOGY M ic ro p o w e r Series R efe re nce in SOT-23 FCRTURCS DCSCRIPTIOn • 3-Lead SOT-23 Package ■ Low Drift: 20ppm/°C Max ■ High Accuracy: 0.2% Max The LT 1460S3-5 is a SOT-23 micropower series reference

BAS616 diode

Contextual Info: 105 Surface Mount Devices General Purpose Switching Diodes Vp Ratings vR ns cd max pF Pinout See Section VII t,.r (max) mV @ 'f mA Package V 'F mA BAS 16 BAS16W BAS 19 BAS20 BAS21 SOT-23 SOT-323 SOT-23 SOT-23 SOT-23 75 75 100 150 200 250 250 200 200 200

sot83

Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions

3,3V OUT VOLTAGE regulator SOT-23 3L

Abstract: SOT-23 vhz 25G10 LT1460 LT1460HCS3-3 LT1460JCS3-3 LT1460S3
Contextual Info: u u LT1460S3 SOT-23 m TECHNOLOGY Family o f M ic ro p o w e r Series R eferences in SOT-23 F€flTUR€S D C S C R IP TIO n • 3-Lead SOT-23 Package ■ Low Drift: 20ppm/°C Max ■ High Accuracy: 0 .2% Max ■ Low Supply Current ■ 20mA Output Current Guaranteed

1ps to92

Contextual Info: LT1460S3-2.5 SOT-23 r j u n e TECHNOLOGY M icropow er Series Reference in SOT-23 F€OTUR€S D€SCRIPTIOfl • 3-Lead SOT-23 Package ■ Low Drift: 20p p m /C Max ■ High Accuracy: 0.2% Max The LT®1460S3-2.5 is a SOT-23 micropower series refer­ ence that combines high accuracy and low drift with low

marking K1 sot363

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE  EQUIVALENT  ORDERING INFORMATION Ordering Number BAV99G-AE3-R BAV99G-AL3-R BAV99G-AN3-R BAV99G-AL6-R Note: Pin Assignment: A: Anode  Package SOT-23 SOT-323 SOT-523 SOT-363

Contextual Info: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR SOT — 23 1. BASE MMBT5401LT1 TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current Icm : “ 0.6 Collector base voltage V ( b r )cbo

4011 philips

Abstract: PNP DARLINGTON SOT-23 PXTA14 BF840 pinout of IC 4011 PMBTA64 df SOT-223 BST50 PMBTA14 BSP50
Contextual Info: N AM E R PHILIPS/DISCRETE ESE 3> • bbS3T31 OGlbEBT 5 ■ "P-2 7 - 0 I Surface M ount Devices DARLINGTON TRANSISTORS ft* 1 PINOUT SEE SECTION VI PMBTA13 PZTA13 PMBTA14 PXTA14 PZTA14 SOT-23 SOT-223 SOT-23 SOT-89 SOT-223 20 20 30 30 30 30 30 30 30 30 300 300

Contextual Info: PJ2N2222A NPN Epitaxial Silicon Transistors GENERAL PURPO SE TRANSISTO R TO-92 • Collector-Emitter Voltage: VCEO = 40V • • Collector Dissipation: P D max = 625 mW - TO-92 SOT-23 300 mW - SOT-23 ABSOLUTE MAXIMUM RATINGS (T a = 25℃) Characteristics

Contextual Info: OPA337 OPA2337 B U R R -B R O W N OPA33S" OPA2338" M/croSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifierMSeries FEATURES DESCRIPTION • M/croSIZE PACKAGES: SOT-23-5<1 SOT-23-8 • SINGLE-SUPPLY OPERATION • RAIL-TO-RAIL OUTPUT SWING • FET-INPUT: lB = 10pA max

DTA114E

Abstract: DTA114EG DTA114ET DTA114E-AE3-R DTA114EL-AE3-R TO-92SP
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD DTA114E PNP SILICON TRANSISTOR DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS „ 1 FEATURES 3 EQUIVALENT CIRCUIT 3 2 1 SOT-23 „ 3 2 1 SOT-323 2 1 SOT-523 ORDERING INFORMATION Normal DTA114E-AE3-R DTA114E -AL3-R DTA114E -AN3-R

Contextual Info: ; S v m Se m i ; SOT-23 5YM5EMI SEMICONDUCTOR MMBT2907LT1 Plastic Encapsulate Transistors transistor SOT — 23 c pnp 1. BASE 2. EM IH E R 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W Tamb=25 °C) 2A Collector current Icm : -0.6 1.3 A Collector base voltage

Contextual Info: rruum TECHNOLOGY Final Electrical Specifications LT1761 Series 100mA, Low Noise, Low D ro p o u t M ic ro p o w e r R egulators in SOT-23 May 1999 KRTUIKS DCSCRIPTIOn • SOT-23 Package ■ Low Quiescent Current: 20\xA ■ Zero Quiescent Current Shutdown State

SOT-23 Product Code bss123

Abstract: DSS SOT23 marking 9a sot-23
Contextual Info: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code

Contextual Info: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit：inch mm MECHANICAL Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : MAXIMUM RATINGS R A T IN G S YM B O L VA L UE U N IT C o lle c to r-E mi tte r Vo lta g e

Contextual Info: ; S v m Se m i ; 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 BCX19LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation Pen : 0.225 W (Tamb=25 °C) 2. I Collector current Icm : 1.3 0.5 r~ m A -E Collector base voltage

transistor cross reference

Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
Contextual Info: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual

ltgf

Abstract: MARKING LTGH LT1761 sot-23 rks AREZ
Contextual Info: rruum TECHNOLOGY Final Electrical Specifications LT1761 Series 100mA, Low Noise, Low D ro p o u t M ic ro p o w e r R egulators in SOT-23 May 1999 FCRTURCS D C S C R IP TIO n • SOT-23 Package ■ Low Quiescent Current: 20|iA ■ Zero Quiescent Current Shutdown State

1SS187

Contextual Info: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

diode MARKING F3

Abstract: marking f3 sot-23 1SS193
Contextual Info: 1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

BSS139

Abstract: E6327 Q62702-S612 BSS139 SOT23 diode sot-23 marking AG MARKING CODE br 13 SOT23
Contextual Info: BSS139 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS on ,max 30 Ω I DSS,min 0.03 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS139 SOT-23 Q62702-S612

1SS187

Contextual Info: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

marking G3

Abstract: 1SS196
Contextual Info: 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.

1SS190

Contextual Info: 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.