SOT-23 702 Search Results

702E

Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT

sot 23 70.2

Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Contextual Info: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

sot 23 70.2

Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300

702 sot23

Abstract: 1UW SOT 23 70.2 SOT23 ADG701 ADG701BRM ADG701BRT ADG702 ADG702BRM ADG702BRT 702 sot 23
Contextual Info: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages

MTN7002N3

Contextual Info: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 1/4 N-CHANNEL MOSFET MTN7002N3 Description •The MTN7002N3 is a N-channel enhancement-mode MOSFET. •Pb-free package Symbol Outline MTN7002N3 SOT-23

transistor R2U

Abstract: SSTA63 marking B25 transistor b25
Contextual Info: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)

transistor s72

Abstract: transistor marking s72 2N7002
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data

Contextual Info: Die no. B-11 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Dimensions Units : mm SST3 Features l.9±0.2 0.95 0.95 available in an SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 40 V (min)

2N7002

Abstract: 2N7002 MARKING 712
Contextual Info: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Contextual Info: MOSFET IC DIP Type SMD Type Type Product specification 2N7002 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Voltage controlled small signal switch 0.4 3 High density cell design for low RDS ON 1 High saturation current capability

B558

Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

AS131-59

Abstract: p-HEMT
Contextual Info: GaAsRFICs and Modules Plastic Packaged Control Products Control FETs Description Insertion Loss Range dB Typ. Isolation Range (dB) Typ. IP3 > 0.5 GHz (dBm) Typ. Package DC-2.5 General Purpose 0.50-0.70 50-10 43 SOT-23 D C -1.0 High Power 0.20-0.30 30-7 60

ZVN4206E

Abstract: Small Signal MOSFETs FMMT4401 ZVN3320F B558 BSS66 BSS67 BSS79B ZVP2106 FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

702 TRANSISTOR smd

Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
Contextual Info: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance

Contextual Info: N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d S ON I d (ON) Order Number / Package Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* 702 * 60V 7.5Û 0.5A 2N7002 where * = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

150X1

Contextual Info: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

2N7002 MARKING 712

Abstract: 2N7002 800mA SOT-23 Marking code MU
Contextual Info: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

DIODE smd marking 702

Abstract: 702 mosfet smd marking marking 702 smd marking 702 702 mosfet 702 transistor smd 702 N smd transistor mosfet 2n7002 702 smd transistor 2N7002 MARKING 702
Contextual Info: MOSFET SMD Type N-Channel MOSFET 2N7002 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Voltage controlled small signal switch 0.4 3 High density cell design for low RDS ON 1 High saturation current capability 0.55 Rugged and reliable

MOSFET SOT-23

Abstract: C702A 702g 2N7002 CMPDM7002A CMPDM7002AG
Contextual Info: CMPDM7002A CMPDM7002AG* SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A and CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect

Contextual Info: Product specification 2N7000 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● High density cell design for low RDS ON +0.1 1.3-0.1 +0.1 2.4-0.1 ● Voltage controlled small signal switch 0.4 3 1 ● High saturation current capability 0.55 ● Rugged and reliable

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Source 3. Drain VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300 4 @ VGS = 4.5V