SOT 23 702 Search Results

702E

Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT

sot 23 70.2

Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Contextual Info: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code

t6661

Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
Contextual Info: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel

SAS SOT23

Abstract: SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG
Contextual Info: BSS 100 BSS 123 SIPMOS Small-Signal Transistors lD - 100 V = 0 .2 2 /0 .1 7 A ^ D S o n = »os 6 -0 TO -92 (BSS 100) SOT-23 (BSS 123) £3 • N channel • Enhancem ent mode • Packages: TO-92, D SOT-23 ’ ) Type Marking Ordering code for version on

sot-23 marking code C33

Abstract: A32 SOT23 code a32 sot SOT "GBA" GH1 sot-23 marking code GEC bc858c g3l MARKING G1.G BC817-25 BC847C
Contextual Info: U.S. European Type Series SST European PRO ELECTRON Type SOT-23 •P ackage style and dimensions SST Package (U. S. /European SOT-23) Dimensions 0- 15 - o ^ o s j ^ ( I ) Emitter (2 ) Base (3 ) Collector Actual size Enlarged (X 3 .0 ) NPN Transistors Electrical characteristics of part No. type can be looked up from the data of DIE No.

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS

sot 23 70.2

Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300

Marking d12

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300

RXT-A28

Abstract: marking 44t Transistors marking 69 rxta28 44t transistor SSTA28 XI100 transistor 44t high voltage npn transistor SOT-89 darlington Z 728
Contextual Info: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. SST3 Features • Dimensions Units : mm l.9 ± 0 .2 available in the following packages: 03 0.95 0.95 — SST3 (SST, SOT-23) t+qii) | (z)|+] I — MPT3 (MPT, SOT-89),

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300

K72 so

Abstract: transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor
Contextual Info: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: 2.5£2 Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 - H : h“ A TOP VIEW l2l , lîl Mechanical Data Case: SO T-23, Molded Plastic

702 sot23

Abstract: 1UW SOT 23 70.2 SOT23 ADG701 ADG701BRM ADG701BRT ADG702 ADG702BRM ADG702BRT 702 sot 23
Contextual Info: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages

MTN7002N3

Contextual Info: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 1/4 N-CHANNEL MOSFET MTN7002N3 Description •The MTN7002N3 is a N-channel enhancement-mode MOSFET. •Pb-free package Symbol Outline MTN7002N3 SOT-23

transistor marking s72

Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
Contextual Info: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW

k72 transistor sot 23

Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Contextual Info: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW

transistor R2U

Abstract: SSTA63 marking B25 transistor b25
Contextual Info: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)

marking 702

Abstract: MTN7002N3 n-channel mosfet SOT-23
Contextual Info: CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2007.12.12 Page No. : 1/5 N-CHANNEL MOSFET MTN7002N3 Description The MTN7002N3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7002N3 SOT-23 D G S G：Gate S：Source

transistor s72

Abstract: transistor marking s72 2N7002
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data

Contextual Info: MMBT1031K 640 mA, 60V, RDS on =2Ω Elektronische Bauelemente N-Channel MOSFET FEATURES Simple Drive Requirement SOT-23 Drain Small Package Outline Gate RoHS Compliant Source A L 3 1 V B S Top View 2 G C MARKING: 702E H D J K Dim Min Max A 2.800 3.040 B 1.200

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Abstract: 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW VDGR 60

2N7002LT1G

Abstract: 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G
Contextual Info: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW

Contextual Info: Die no. B-11 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Dimensions Units : mm SST3 Features l.9±0.2 0.95 0.95 available in an SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 40 V (min)