SO 342 Search Results

Contextual Info: NT1GD64S8HA0FM / NT1GD64S8HB0FM 1GB : 128M x 64 PC2700 / PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 64Mx8 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Data is read or written on both clock edges

PC2-3200

Abstract: PC2-5300 PC2-6400
Contextual Info: White Electronic Designs W3HG64M72EEU-PD4 ADVANCED* 512MB – 64Mx72 DDR2 SDRAM, SO-CDIMM, w/PLL FEATURES DESCRIPTION „ Unbuffered 200-pin SO-CDIMM , Small-Outline dual in-line memory module. Raw card "B" „ Fast data transfer rates: PC2-6400*, PC2-5300,

Contextual Info: IBM11T8645HP 8M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • 8Mx64 Extended Data Out SO DIMM • Performance:

Contextual Info: IBM11T4645MP IBM11T8645MP 4M/8M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses Au contacts Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM

Contextual Info: IBM11T4640MP 4M x 64 144 PIN SO DIMM Features Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses Optimized for byte-write non-parity applications • 4Mx64 Fast Page Mode SO DIMM • Performance: -50

Contextual Info: 19-1089; Rev 2; 8/97 Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps _Selection Table PART AMPS PER PACKAGE SHUTDOWN MODE PINPACKAGE MAX4130 1 — 5 SOT23-5 MAX4131 1 Yes 8 SO/µMAX MAX4132 2 — 8 SO/µMAX

Contextual Info: Data Sheet Rev.0.9 03.12.2012 2048MB DDR3 – SDRAM ECC SO-DIMM Features: 204 Pin ECC SO-UDIMM • SGN02G72F1BK1MT-xxRT •     2GByte in FBGA Technology RoHS compliant Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11 

MAX4130

Abstract: MAX4130EUK MAX4131 MAX4131ESA MAX4131EUA MAX4132 MAX4133 MAX4134
Contextual Info: 19-1089; Rev 0; 8/96 Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps _Selection Table PART AMPS PER PACKAGE SHUTDOWN MODE PINPACKAGE MAX4130 1 — 5 SOT23-5 MAX4131 1 Yes 8 SO/µMAX MAX4132 2 — 8 SO/µMAX

Contextual Info: Data Sheet Rev.0.9 03.12.2012 2048MB DDR3 – SDRAM ECC SO-DIMM Features: 204 Pin ECC SO-UDIMM • SGN02G72F1BK1MT-xxRT •     2GByte in FBGA Technology RoHS compliant Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11 

Contextual Info: Data Sheet Rev.1.0 24.05.2013 2048MB DDR3L – SDRAM ECC SO-UDIMM Features: 204 Pin ECC SO-UDIMM • SLN02G72F1BK1MT-xxRT •      2GByte in FBGA Technology RoHS compliant Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11

MAX4130

Abstract: MAX4130EUK-T MAX4131 MAX4131EBT-T MAX4131EUA MAX4133 MAX4134 SOT-23 AABB AAx8
Contextual Info: 19-1089; Rev 3; 3/03 Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps Selector Guide AMPS PER PACKAGE SHUTDOWN MODE PINPACKAGE MAX4130 1 — 5 SOT23 MAX4131 1 Yes 6 UCSP, 8 µMAX/SO MAX4132 2 — 8 µMAX/SO MAX4133 2 Yes

BCM57780

Abstract: AN12947a UP6111 isl62882 SLG8SP585V ALC669X bcm5778 wpce775 Intel hm55 WINBOND W25Q32BVSSIG
Contextual Info: 5 4 3 2 1 ZY9B SYSTEM BLOCK DIAGRAM GPU CORE PWR CHARGER P44 ISL6264 GPU IO PWR 3/5V SYS PWR P45 ISL62827 +3V,+ 5V,+1.5V,+1.05V,+1.1V_VTT CLOCK GENERATOR <MCH Processor> Dual Channel 800/ 1066 MHz DDR III SO-DIMM 0 SO-DIMM 1 800 MT/s 1066 MT/s P14, 15 DDR SYSTEM MEMORY

Contextual Info: O K I Semiconductor MSC23T/D1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The O K I MSC23T/D1720C-xxBS18 is a fu lly decoded 1,048,576-word x 72-bit C M O S Dynam ic Random Access M em ory M odule composed of eighteen 4-Mb D R A M s 1M x 4 in T SO P or SO J

Contextual Info: C I R C UI T A S S E M B L Y CORP IbE D • .025 Sq. Post Header Straight-.100 Centers B 1 3 3 7 5 Ö 0001L,fl2 7 Straight-.100 x .100 .0 96 m m m I— .2 4 NO. OF X .1 0 0 i.ooe POS. PER ROV » LENGTH *.0 3 0 y,- \ ? v. f i 'k A .0 2 5 SO. TYP .0 2 5 SO.

MO-193 footprint

Abstract: CA 4570 QCI-39000
Contextual Info: PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Microcontroller Products

Battery charger lm317

Abstract: IC LM317 use in 12v charger circuit charger hp sot23-5 marking ha marking D02A schematic diagram 12V battery charger regulator LM555 LM317 sot23 LM338 LM338 NATIONAL SILICON
Contextual Info: A pril 1998 LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller The LM 3420 is available in a sub-m iniature 5-lead SO T23-5 surface m ount package thus allowing very com pact designs. General Description The LM 3420 series of controllers are m onolithic integrated

G5725

Contextual Info: SU572568FD8DRCU August 23, 2007 Ordering Information Part Numbers Description Module Speed SM572568FD8DRCL 256Mx72 2GB , DDR, 200-pin SO-DIMM, Unbuffered, ECC, 128Mx8 Based (Stacked - two 64Mx8), DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SG572568FD8DRCL

23Volt

Contextual Info: SG5645685D8NRCU02 August 8, 2006 Ordering Information Part Numbers Description Module Speed SG5645685D8NRCL02 256Mx64 2GB , DDR, 200-pin SO-DIMM, Unbuffered, PLL, Non-ECC, 256Mx8 Based (Stacked - two 128Mx8), DDR333B, 31.75mm, 22Ω DQ termination, Green Module

Contextual Info: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

gs 9412

Abstract: F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294
Contextual Info: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: F011 F63TNR F852 L86Z NDS8435 9959
Contextual Info: May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

8 pin ic 9435A

Abstract: 9435a FDS9435A data F63TNR F852 FDS9435A L86Z SOIC-16
Contextual Info: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

F852 transistor

Abstract: NDS9925A F011 F63TNR F852 L86Z SOIC-16 S237
Contextual Info: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high