SMP25N Search Results

SMP25N05-45L

Contextual Info: Tem ic SMP25N05-45L Siliconix N-Chaniiel Enhancement-Mode Transistor, Logic Level 175 °C Maximum Junction Temperature Product Summary Jd IA 0.045 @ V qs = 10 V 25 0.060 @ VGS = 4.25 V 25 50 D O TO-220AB o .►JE D rain C o n n e c ted to Tab G D S Top View

Contextual Info: SMP25N06 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)40 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85 Minimum Operating Temp (øC)

SMP25N05-45L

Abstract: SMP25N05
Contextual Info: T em ic SMP25N05-45L Siliconix N-Channel Enhancement-Mode Ttansistor, Logic Level 175 °C Maximum Junction Temperature Product Summary r DS on (£2) I d (A ) 0.045 @ V GS = 10 V 25 0.060 @ V GS = 4.25 V 25 V(BR)DSS (V) 50 T0-220AB o Drain Connected to Tab

SMP25N05-45L

Abstract: SMP25N05
Contextual Info: SMP25N05-45L C fS iB c o n ix in c o r p o r a te d N-Channel Enhancement Mode Transistor Logic Level TO -220AB TO P VIEW O PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) ( il) (A) 50 0.045 25 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: SMP25N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)40 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85 Minimum Operating Temp (øC)

SMP25N06

Abstract: SMP25N05 25n05 sm 4109 A2575 25n06
Contextual Info: SMP25N06, SMP25N05 H S gäS N-Channel Enhancement Mode Transistors T Q -2 2 0 A B T O P VIEW PRODUCT SUMMARY PA R T N UM BER V BR DSS rDS(ON) • d (V) (il) (A) SMP25N06 60 0.060 25 SMP25N05 50 0.060 25 1 2 3 GATE DRAIN (C on n e cted to TAB) SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

SMP25N06

Abstract: si9112 SI9112DJ
Contextual Info: S Ì91 1 2 «T-Siliconix ^ ^9 in c o rp o ra te d I I m High-Voltage Switchmode Controller FEATURES • 9 to 80 V Input Range • Current-mode Control • High Efficiency Operation > 80% • Internal Start-up Circuit • H igh-speed, Source-Sink Output Drive

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

Contextual Info: LTC1155 Dual High Side Micropower MOSFET Driver DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no

SMW60N06-18

Abstract: SMP50N05 SMP25N06 SMW14N50F smu10p05 SMP60N06-18 SMP4N60 SMP20P10 SMP20N20 SMW45N10
Contextual Info: - f X£ ft Vd s sa £ ft Vg s m. *£ Ta=25*C Pd Id loss I gss Vg s th) SMP3N5QF SILICONIX N SM P 3 P 1 0 SILICONIX P roin * /CH * /CH CnA) Vg s (V) 500 ±20 2.5 48 ±500 ±20 -100 ±20 -3 20 ±500 ±20 (V) (V) m (A) I d (on) g fs Ciss Coss Crss V g s =0

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

1811PA250-3C8

Abstract: 1811pl00-3c8 1811PL003C8 SMP25N06 1811PA2503C8 ferroxcube toroid 1811PL pot core inductor winding transistor a1m Si9110
Contextual Info: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

SI9120

Abstract: 1KW SMPS IRF820 2N7000 AN707 IN4148 31AWG 1kw full bridge converter design inverter Controller PWM 1kw 1kw sine wave inverter circuit diagram
Contextual Info: Siliconix AN707 Designing LowĆPower OffĆLine Flyback Converters Using the Si9120 Switchmode Controller IC by Craig Varga Getting high efficiency from low-power off-line power supplies has always posed difficulties for the design engineer. Power hungry control circuits require either line

optocoupler H-BRIDGE

Abstract: Si9950DY SMP25N06 mospower applications handbook SMP20P10 J107 DIODE SMP40N10 AN706 CR100 Siliconix JFET application note
Contextual Info: AN706 Siliconix Motor Drive Circuits Using the D469A James A. Harnden Introduction Many applications operate MOSPOWER devices as on/off switches. In applications where device switching speed is of less concern and the MOSPOWER device's gate capacitance Ciss is sufficiently low, they may be

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

MTP50N05E

Abstract: r1N4148 marking TA1S transistor MTP50N05E SMP25N05 ttl to cmos converter LTC1155 LTC1155CN8 LTC1155C LTC1155CJ8
Contextual Info: LTC1155 u i m TECHNOLOGY ftflTUfKS * • Fully Enhances N-Channel Power MOSFETs ■ 8|iA Standby Current ■ 85^A ON Current ■ Short Circuit Protection ■ Wide Power Supply Range 4.5V to 18V ■ Controlled Switching ON and OFF Times ■ No External Charge Pump Components

IRFZ44 equivalent

Abstract: H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155
Contextual Info: LTC1155 Dual High Side Micropower MOSFET Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no

mosfet LT 438

Abstract: 9vt018v 9vt016v 110 AC to 12V dc transformer xnor gate ttl 110 volt ac transformer less power supply 6v fet JTW 74hc single zener diode a24 6V DC motor
Contextual Info: LTC1155 u i m TECHNOLOGY FCRTUR6S Dual High Side Micropower MOSFET Driver DCSCRIPTIOn * The LTC1155 dual high side gate driver allows using low cost N-channel FETs tor high side switching applications. An internal charge pump boosts the gate above the posi­

datasheet for transformer AN707 Si9120

Abstract: Si9120 1kw full bridge converter smps SI9120 equivalent 2N7000 AN703 AN707 IN4148 IRF820 Sine wave PWM DC to AC Inverter ics
Contextual Info: AN707 Designing Low-Power Off-Line Flyback Converters Using the Si9120 Switchmode Controller IC Getting high efficiency from low-power off-line power supplies has always posed difficulties for the design engineer. Power hungry control circuits require either line

SMP16P06

Abstract: SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06
Contextual Info: CXSiliconix in c o r p o r a te d Selector Guide Plastic Packages N-Channel Cont’d N-Channel V(BÇDSS (A) Part Number >d s ( o n ) (Û ) V(BRJDSS r D S(O N ) Id (A) ( il) Part Number 650 5.8 1.5 VNT008D1 50 30 0.040 650 5.0 2.0 VNT009D1 50 25 0.060 BUZ11A1

AN707

Abstract: 2N7000 AN88 IN4148 IRF820 Si9120 SMP25N05 BLOCK DIAGRAM OF SMPS power transformer lg monitor flyback transformer data pin
Contextual Info: AN707 Siliconix Designing LowĆPower OffĆLine Flyback Converters Using the Si9120 Switchmode Controller IC by Craig Varga Getting high efficiency from lowĆpower offĆline power supplies has always posed difficulties for the design engineer. Power hungry control circuits require either

optocoupler H-BRIDGE

Abstract: J107 DIODE SMP25N06 mospower applications handbook SI9950DY SMW14N50F SMP20P10 SMP30N10 si9950 SMP8N50F
Contextual Info: AN706 Motor Drive Circuits Using the D469A James A. Harnden Introduction Many applications operate MOSPOWER devices as on/off switches. In applications where device switching speed is of less concern and the MOSPOWER device’s gate capacitance Ciss is sufficiently low, they may be

SMP25N06

Abstract: 1811pl00-3c8 ferroxcube 43 toroid core equivalent diode for R2C 1811P transistor a1m Si9110 1811PL Siliconix AN703 A1m anode
Contextual Info: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS