SML2 Search Results

2000A power diode

Abstract: DIODE 200A 600V ic 7800 175C
Contextual Info: SML200HB12 Attributes: -Aerospace build standard -High reliability -Lightweight -Metal matrix base plate -AlN isolation -Trench gate igbts Maximum rated values/Electrical Properties Vce Y Collector-emitter Voltage 1200 V Tc=70C, Tvj=175C Tc=25C,Tvj=175C Ic, nom

TP 115

Abstract: UL20624 SML2CD VW-1 H 24X192-BDX6 e41105 sumitomo UL 20624 sumitomo terminals volkswagon
Contextual Info: 1. Scope This specification covers the construction & properties of SUMICARD BD Type 0.5 Pitch UL File No. E41105- UL Style 20624 85°c 60V SML2CD 24X192-BDX6(BL)-P0.5-S4-M-N(35) UL20624 2.Construction and Size: 2.1 Construction Item Material Size Material

SML2822D

Contextual Info: SML2822D SEME LAB METAL GATE POWER FET MECHANICAL DATA Dimensions in mm. 0 .3 2 0 .2 4 0 .1 0 0 .0 2 16˚ m ax. GOLD METALLISED MULTI-PURPOSE SILICON POWER FET 13˚ 1 .7 0 m ax. 10˚ m ax. 6 .7 6 .3 3 .1 2 .9 4 3 .7 7 .3 3 .3 6 .7 1 1 .0 5 0 .8 5 2 3 0 .8 0

diode ct 2405

Abstract: SML20EUZ12BC fast recovery Diode 1200V 200A
Contextual Info: SML20EUZ12BC Enhanced Ultrafast Recovery Diode 1200 Volt, 2 x 20 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML diode features a triple charge control action utilising 20EUZ12BC Semelab’s Graded Buffer Zone technology combined with

24V 20A SMPS

Abstract: SML20SUZ12K
Contextual Info: SML20SUZ12K Ultrafast Recovery Diode 1200 Volt, 20 Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 20SUZ12K diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML20B67

Contextual Info: SML20B67 TO–247AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177)

SML25EUZ06K

Abstract: 600V 25A Ultrafast Diode
Contextual Info: SML25EUZ06K Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode SML 25EUZ06K TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising 1 2 Semelab’s Graded Buffer Zone technology combined with

SML20SUZ12S

Abstract: 24V 20A SMPS
Contextual Info: SML20SUZ12S Ultrafast Recovery Diode 1200 Volt, 20 Amp MECHANICAL DATA TECHNOLOGY The planar passivated and standard ultrafast recovery Back of Case Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML20W65

Abstract: To267 DSA001409
Contextual Info: SML20W65 TO–267 Package Outline. Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 200V 65A ID(cont) Ω RDS(on) 0.026Ω • Faster Switching • Lower Leakage • TO–267 Hermetic Package D G S StarMOS is a new generation of high voltage

SML20T75

Contextual Info: SML20T75 T247clip Package Outline. Dimensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 5.38 (0.212) 6.20 (0.244) 4.50

SML20EUZ12S

Contextual Info: SML20EUZ12S Enhanced Ultrafast Recovery Diode 1200 Volt, 20 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML 20EUZ12S Semelab’s Graded Buffer Zone technology combined with

600V 25A Ultrafast Diode

Abstract: SML25SUZ06B
Contextual Info: SML25SUZ06B Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML 25SUZ06B Semelab’s Graded Buffer Zone technology combined with

SML20H45

Contextual Info: SML20H45 TO–258 Package Outline. Dimensions in mm inches 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) 13.84 (0.545) 13.58 (0.535) 17.96 (0.707) 17.70 (0.697) 1.14 (0.707) 0.88 (0.035) VDSS 200V 45A ID(cont) Ω RDS(on) 0.040Ω 19.05 (0.750)

SML25EUZ06B

Contextual Info: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

Contextual Info: SML20SUZ12B SEME LAB Ultrafast Recovery Diode 1200 Volt, 20 Amp TO-247 Package Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 20SUZ12B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

Carbide Schottky Diode

Contextual Info: SILICON CARBIDE SCHOTTKY DIODE SML20SIC06M • VR max = 600V • IF(avg) = 20A • VF(typ) = 1.5V • • • • Hermetic TO220 Metal Package No Reverse Recovery No Forward Recovery High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

10 AMP 1200V RECTIFIER DIODE

Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
Contextual Info: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

standard recovery diode 25a

Contextual Info: SML25SUZ06B SEME LAB TO-247 Package Back of Case Cathode Ultrafast Recovery Diode 600 Volt, 25 Amp TECHNOLOGY The planar passivated and standard ultrafast recovery SML 25SUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML20EUZ12K

Contextual Info: SML20EUZ12K SEME LAB 2 D PAK Package Enhanced Ultrafast Recovery Diode 1200 Volt, 20 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 20EUZ12K diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML20EUZ12D

Contextual Info: SML20EUZ12D SEME LAB TO-220 Package Enhanced Ultrafast Recovery Diode 1200 Volt, 20 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML 20EUZ12D 1- Cathode 2- Anode

600v 10A ultra fast recovery diode

Abstract: 1200v diode to247 SML20SUZ12BC 24V 20A SMPS
Contextual Info: SML20SUZ12BC SEME LAB Ultrafast Recovery Diode 1200 Volt, 2 x 20 Amp TO-247 Package Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 20SUZ12BC diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML20SUZ03D

Abstract: 18V-20A
Contextual Info: SML20SUZ03D SEME LAB TO-220 Package Back of Case Cathode Ultrafast Recovery Diode 300 Volt, 20 Amp TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML 20SUZ03D 1- Cathode 2- Anode 1 Semelab’s Graded Buffer Zone technology combined with

SML20SUZ12S

Contextual Info: SML20SUZ12S SEME LAB Ultrafast Recovery Diode 1200 Volt, 20 Amp 3 D PAK Package TECHNOLOGY Back of Case Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 20SUZ12S Semelab’s Graded Buffer Zone technology combined with

Contextual Info: SiC 650V N-CHANNEL 4 MOSFET - S SML25SCM650N2A • SiC MOSFET MOSFET In A Hermetic SMD1 Package • Silver Sintered die attached for improved thermal performance • Designed for High Temperature Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated