SMD TRANSISTORS NC Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

BF840

Abstract: BF841
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF840 BF841 SILICON PLANAR TRANSISTORS N–P–N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

smd transistor 68 w

Contextual Info: Transistors IC SMD Type Complementary Enhancement Mode MOS Transistors KHC2300 Features High-speed switching No secondary breakdown. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage N-Channel P-Channel Unit VDSS 300

54mj

Abstract: SMD Transistor nc 2SK2479
Contextual Info: Transistors IC SMD Type MOS Field Effect Transistors 2SK2479 TO-263 Unit: mm Low On-state Resistance:RDS on =7.5 max.(VGS=10V,ID=2.0A) Low Ciss Ciss=485pF TYP 1 .2 7 -0+ 0.1.1 Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2

SMD Transistors nc

Abstract: 4600 smd 2SJ605 SMD Transistor nc v4600
Contextual Info: Transistors IC SMD Type MOS Field Effect Transistors 2SJ605 TO-263 1 .2 7 -0+ 0.1.1 MAX. VGS = -10 V, ID = -33 A RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) Low input capacitance 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode

Contextual Info: Transistors IC SMD Type 200V P-Channel MOSFET KQB12P20 TO-263 -11.5A, -200V, RDS on = 0.47 1 .2 7 -0+ 0.1.1 Features @VGS = -10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge ( typical 31 nC) 5 .2 8 -0+ 0.2.2 Improved dv/dt capability 0.1max +0.1

p-channel mosfet

Abstract: P CHANNEL POWER MOSFET P-Channel MOSFET -800v smd transistor 26
Contextual Info: Transistors IC SMD Type Complementary MOSFET Half-Bridge N- and P-Channel KI4500BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25

IRF3205 smd

Contextual Info: MOSFET IC Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 3.30 ±0.10 TO-220 2.54 ±0.20 ø3.18 ±0.10 0.70 15.80 ±0.20 ● Advanced Process Technology ● Ultra Low On-Resistance (1.00x45°) 15.87 ±0.20 6.68 ±0.20

Contextual Info: Transistors IC SMD Type Product specification 2SK3295 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 QG = 16 nC TYP. ID = 35 A, VDD = 16 V, VGS = 10 V 0.1max +0.1 1.27-0.1 Surface mount device available

Contextual Info: Transistors IC MOSFET SMD Type Product specification KI1302DL Features 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current TJ = 150 TA=25 -TA=70 ID Pulsed drain current

ID09

Contextual Info: Transistors IC MOSFET SMD Type Product specification KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90

Contextual Info: Transistors IC SMD Type Product specification 2SK3296 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Built-in gate protection diode Surface mount device available +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max

IRFN054

Contextual Info: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: Transistors IC SMD Type Product specification KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 +0.1

Contextual Info: Transistors IC SMD Type N- and P-Channel 30-V D-S MOSFET KI4539ADY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70

Contextual Info: Transistors IC SMD Type N- and P-Channel 20-V D-S MOSFET KI4511DY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25

Contextual Info: Transistors IC SMD Type N- and P-Channel 30-V D-S MOSFET KI4532DY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25

Contextual Info: Transistors IC SMD Type N- and P-Channel MOSFET KI4503DY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TJ = 150 * TA = 25 ID Pulsed Drain Current

Contextual Info: Transistors IC SMD Type N- and P-Channel 30-V D-S MOSFET KI4532ADY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70

Contextual Info: Transistors IC SMD Type Product specification KDD3670 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max +0.28

34A-100

Abstract: MJ 73 34A100 1b.1 smd transistor smd transistor 26 SMD Transistor nc KDD3670 10092a
Contextual Info: Transistors IC SMD Type 100V N-Channel PowerTrench MOSFET KDD3670 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1

Contextual Info: Transistors IC MOSFET SMD Type Product specification KI1400DL SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.36 +0.15 2.3-0.15 +0.1 1.25-0.1 0.525 Features +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: Transistors IC SMD Type Product specification KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features +0.1 1.27-0.1 Critical DC electrical parameters specified at 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.