SMD TRANSISTOR MARKING 02N Search Results
SMD TRANSISTOR MARKING 02N Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5962-8672601EA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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| 54F151/BEA |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F151/B2A |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) |
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| 5962-8672601FA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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SMD TRANSISTOR MARKING 02N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
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OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code | |
02N80C3Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications |
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SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 | |
02N80C3
Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
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SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c | |
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Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications |
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SPD02N80C3 PG-TO252-3 02N80C3 | |
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Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications |
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SPD02N80C3 PG-TO252-3 02N80C3 | |
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Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 9 Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications |
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SPD02N80C3 PG-TO252-3 02N80C3 | |
02N60S5
Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
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SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5 | |
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Contextual Info: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity |
OCR Scan |
SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-T0220-3-1 02N60S5 Q67040-S4181 P-T0263-3-2 | |
SPP02N60S5
Abstract: 02n60s5
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SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 SPP02N60S5 02n60s5 | |
02N60
Abstract: g25 SMD Transistor SMD Transistor g25 02N60C3 SMD MARKING CODE g25 A70 SMD 02n60c smd transistor ds SOT 23 SP*02N60 SPN02N60C3
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SPN02N60C3 OT223 Q67040-S4553 02N60C3 02N60 g25 SMD Transistor SMD Transistor g25 02N60C3 SMD MARKING CODE g25 A70 SMD 02n60c smd transistor ds SOT 23 SP*02N60 SPN02N60C3 | |
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Contextual Info: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications |
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SPD02N80C3 PG-TO252-3 02N80C3 | |
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Contextual Info: SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type |
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SPN02N60C3 OT223 Q67040-S4553 02N60C3 | |
SMD Transistor g25
Abstract: g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60
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SPN02N60C3 OT223 Q67040-S4553 02N60C3 SMD Transistor g25 g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60 | |
02N60S5
Abstract: SPN02N60S5 VPS05163
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SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163 | |
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Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances |
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SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 | |
SPN02N60S5
Abstract: 02N60S5 VPS05163 02N60
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SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 02N60 | |
02n60s5
Abstract: SPN02N60S5 VPS05163 02N6
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SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6 | |
02n60s5
Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5
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SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5 | |
SPN02N60S5Contextual Info: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity |
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SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5 | |
02N60
Abstract: SPD02N60S5 SPU02N60S5
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SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5 | |
SPB02N60S5Contextual Info: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance |
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SPB02N60S5 PG-TO263 SPB02N60S5 Q67040-S4212 02N60S5 | |
SPB02N60S5Contextual Info: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance |
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SPB02N60S5 P-TO263-3-2 SPB02N60S5 Q67040-S4212 02N60S5 | |
SPP02N60S5
Abstract: 02N60S5
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SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 SPP02N60S5 02N60S5 | |
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Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 |
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SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 | |