SMD MARKING CODE A09 Search Results

NCP6131

Abstract: 6TPE150MAZB 6TPG100M SANYO 2R5TPE470M7 2TPE470M6 6TPE220MAZB 2TPLF470M4E 25TQC5R6M 2TPLF470M6 2TPE470M7
Contextual Info: Capacitors General Catalog 2010-7 Aluminum Solid Capacitors with Conductive Polymer Tantalum Solid Capacitors with Conductive Polymer www.edc.sanyo.com Feature Feature Solid electrolytic capacitors with conductive polymer to meet the needs of all electronic equipments in the world

SANYO POSCAP 4TPB220M

Abstract: SANYO 16TQC100M 6TPU10M Sanyo date code marking sanyo capacitors 6SVPS120M SANYO POSCAP 6sp150M TAE 13005 2TPLF470M5 2R5TPF470M6L
Contextual Info: SANYO Capacitors General Catalog 2008-10 Aluminum Electrolytic Capacitors Aluminum Solid Capacitors with Conductive Polymer Aluminum Solid Capacitors with Organic Semiconductive Electrolyte Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors with

SMD MARKING CODE a09

Abstract: 326 SMD MARKING CODE marking smd TO-103 smd D2E "marking SMD" POSCAP Marking SMD type 10 358 smd marking SMD MARKING CODE D4
Contextual Info: POSCAP Line-up POSCAP Line-up TPSF UP TPU POSCAP Line-up TPL TPLF UP Image of case size Products list Explanation of part numbers Packing specifications Recommended land pattern dimension Recommended soldering condition Fundamental structure Ｃharacteristics

Contextual Info: Fundamental structure Characteristics Reliability SVPF Surface mount type SVPE SVPS SVPD SVPC SVPB SVPA SVQP Items Condition − − − 120Hz/20℃ 120Hz/20℃ 120Hz/20℃ Rated voltage applied, after 5 minutes 100kHz/20℃ −55℃ Z/Z20℃ 100kHz/＋20℃

Contextual Info: Fundamental structure Characteristics Reliability SVPF Surface mount type SVPE SVPS SVPD SVPC SVPB SVPA SVQP Condition Rated voltage V (V) Surge voltage Category temperature range (℃) Capacitance tolerance (％) Rated capacitance range ( F) Dissipation Factor (DF)

d 112zb

Abstract: XTAL, 40MHz, ABM10 Series, SMD crystal oscillator xtal 3.57MHz
Contextual Info: ABRACON C O R P O R AT I O N A Worldwide Leading Supplier of Electronic Components The Power of Linking Together Mission Statement ABRACON Corporation’s mission is to continuously grow by promoting invaluable contributions from our employees and suppliers in order to equip our customers

Sanyo "date code" POSCAP Capacitor

Abstract: Sanyo CAPACITOR DATE CODE MARKING ON PACKING SANYO 2R5TPE470M7 2TPE470M6 SMD MARKING CODE p91 16TQC100M TPf series 5502M SANYO 16TQC100M 2TPLF470M4E
Contextual Info: POSCAP INDEX Tantalum Solid Capacitors with Conductive Polymer POSCAP Line-up Series system diagram Image of case size Products list Explanation of part numbers Packing specifications Selection guide Guidelines and precautions for use Series integration ①The following applicable model are deleted from each of the series of characteristics list.

SMD MARKING CODE a09

Abstract: smd diode schottky code marking 1A A09 smd TS2509 TS2509CS 10uH inductor dc-dc converter 12v to 5v 3a SMD Step-Down Voltage Regulator 27BSC TS-2509
Contextual Info: TS2509 3A / 500KHz PWM Buck Converter SOP-8 Pin Definition: 1. FB 5. SW 2. EN 6. SW 3. Comp 7. Vss 4. Vcc 5. Vss General Description TS2509 consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal PMOS and etc. TS2509 provides low-ripple power, high efficiency,

smd diode schottky code marking 1A

Abstract: SMD MARKING CODE a09 A09 smd EL series SMD transistor SMD INDUCTOR marking code 3a02a 10uH inductor adapter 12v 5a dc-dc converter 12v to 5v 3a marking code A09 SMD Transistor
Contextual Info: TS2509 3A / 500KHz PWM Buck Converter SOP-8 Pin Definition: 1. FB 8. Vss 2. EN 7. Vss 3. Comp 6. SW 4. Vcc 5. SW General Description TS2509 consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal PMOS and etc. TS2509 provides low-ripple power, high efficiency,

W06* MARKING smd code

Abstract: smd marking code W06 W08 mic SMD w06 DAT54 SMD805 smd w04 77 AMP 120527-1 M15N06 ADSP-21160
Contextual Info: Hardware Rev. 2.2 ADSP-21160 EZ-KIT Lite User Guide Part Number 500-00546 2000 Analog Devices, Inc. ALL RIGHTS RESERVED Analog Devices, Inc. Digital Signal Processing Division One Technology Way P.O. Box 9106 Norwood, MA 02062-9106 617 329-4700 Copyright Information

Contextual Info: Data Sheet Rev.1.1 09.02.2010 1024MB DDR SDRAM SoDIMM 200Pin SO-DIMM Features: SDN01G64L1BE2HY-50R 1 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications 1 DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E

H5DU5162

Contextual Info: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank

Contextual Info: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank

MT46V32M16P

Contextual Info: Data Sheet Rev.1.0 26.05.2008 512MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN06464E1C62MT-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 512MB with 8 dies and 2 ranks

Contextual Info: Data Sheet Rev.1.1 22.02.2010 512MB DDR1 – SDRAM SO-DIMM Features: Features: 1 200-pin 64-bit Small Outline, Dual-In-Line Double 200 PIN SO-DIMM SDN06464K1BE1HY-50R 1 512MB DDR PC3200 1 1 TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3

Contextual Info: Data Sheet 512MB DDR Features: SDN06464D1BJ1SA-xx W R • 512MByte in FBGA Technology •       RoHS compliant Options:  Data Rate / Latency DDR 400 MT/s CL3 DDR 333 MT/s CL2.5  Module density 512MB with 8 dies and 1 rank  Standard Grade

Contextual Info: Data Sheet 512MB DDR Features: SDN06464D1BJ1SA-xx W R • 512MByte in FBGA Technology •       RoHS compliant Options:  Data Rate / Latency DDR 400 MT/s CL3 DDR 333 MT/s CL2.5  Module density 512MB with 8 dies and 1 rank  Standard Grade

Contextual Info: Data Sheet Rev.1.4 1024MB DDR ECC – SDRAM SoDIMM 200PIN ECC SoDIMM 1024MB PC-3200 in COB Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 1 Module densities 1024MB with 18 dies and 2 ranks Standard Grade C TA

Contextual Info: Data Sheet Rev.1.0 29.01.2009 256MB DDR SDRAM SoDIMM Fox 3 200Pin SO-DIMM Features: 1 1 1 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 Module densities 256MB with 8 dies and 1 rank 512MB with 16 dies and 2 ranks Standard Grade

Contextual Info: Data Sheet Rev.1.3 512MB DDR ECC – SDRAM SoDIMM 200PIN ECC SoDIMM 512MB PC-3200 in COB Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 1 Module densities 512MB with 9 dies and 1 rank Standard Grade C TA

Contextual Info: Data Sheet 512MB DDR Rev.1.2 15.11.2010 SDRAM SoDIMM 200 PIN SO-DIMM Features: SDN06464D1BE1HY-xxR • 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications • DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E

Contextual Info: Data Sheet Rev.1.1 01.04.2010 1024MB DDR SDRAM SoDIMM 200Pin SO-DIMM Features: SDN01G64D1BE2HY-50R 1024MB DDR PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 • Module densities

Contextual Info: Data Sheet 512MB DDR Rev.1.2 15.11.2010 SDRAM SoDIMM 200 PIN SO-DIMM Features: SDN06464D1BE1HY-xxR • 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications • DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E

Contextual Info: Data Sheet Rev.1.0 29.01.2009 512MB DDR SDRAM SoDIMM Fox 3 200Pin SO-DIMM Features: 1 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 Marking -50 -60 -75 1 Module densities 256MB with 8 dies and 1 rank 512MB with 16 dies and 2 ranks