SMD MARKING CODE 10A Search Results

marking 6a2 smd

Abstract: zener Z11B
Contextual Info: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

smd diode a5

Abstract: DG1J2A smd diode marking a5 SMD MARKING CODE vk SHINDENGEN DIODE S71S
Contextual Info: Schottky Barrier Diode single Diode DG1J2A m n m o u t lin e Package G1F 20V 1.5A 3.5 Feature • Ö 'J ^ S M D |S711 • Ultra-small SMD • iS iS S =0.8 mm • I r= 10yA Unit I mm Weight 0.01 1r Typ 7 • Ultla-thin PKG=0.8mm • Low Ir=10a/A Cathode m ark

Scans-00828

Abstract: DE10PC3 SHINDENGEN DIODE 0336g
Contextual Info: Schottky Barrier Diode Twin Diode mnm DE10PC3 o u tlin e E-pack Package Unit I mm Weight 0.326k Typ r r« 30 V 10A œ - Feature • SMD • SMD • î 3 V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG 10PC3 n - y W X fW Date code Main Use

Contextual Info: Schottky Barrier Diode Twin Diode mwm DE10SC3L o u t lin e E-pack Package Unii I mm Weight 0.326« Typ 30 V 10A Feature • SMD • SMD 1 • (S V f = 0.45V • Low V f=0.45V • P r r s m 7’ K 5 > ì ' i ì ì ì • PnnsM Rating • /Jv3Ü*®3ÎES*

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

CTLSH10-100L

Abstract: DIODE SMD 10A diode smd marking code 435 100L diode smd marking code 631
Contextual Info: Product Brief CTLSH10-100L TLM364 10A, 100V Low VF Schottky Rectifier in the TLM364 package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CTLSH10-100L is a high performance 10 Amp silicon Schottky rectifier designed for applications requiring

marking SMD crystal CODES

Abstract: Q 8,0-JXG75P2-12-30/100-T3-LF JTX310 Q25,0-SMU4-18-30/50-FU-LF JAUCH Quartz Crystals 16 Mhz Q8.0-SMU4-18-30/50-T1-LF
Contextual Info: F REQUENCY C ONTROL P RODUCTS JAUCH QUARTZ CRYSTALS individual working copy 03/11/14 THE SPECIALIST FOR FREQUENCY CONTROL PRODUCTS The Specialist for frequency control products Worldwide Presence expert advice by quartz crystal specialists Technical Customer Support

mbr20400

Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

MBR2060CT-G

Abstract: MBR20100CT-G
Contextual Info: Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

mbr20400

Contextual Info: Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

Contextual Info: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15CJ6V8-G Thru. TV15CJ601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power : 1500Watts RoHS Device Features -Glass passivated chip. -1500W peak pulse power capability with a 10/1000 S waveform, repetitive rate

smd diode sod-323 marking code 500

Abstract: smd diode schottky code marking 1A DIODE SMD MARKING 5C smd diode 5c SOD-323 smd diode schottky code marking 63 diode smd marking 1A RB551V-30 smd diode 303
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist RB551V-30 RoHS Device Io = 500 mA V R = 20 Volts Features SOD-323 Low reverse current. Designed for mounting on small surface. 0.071 ( 1.80 ) 0.063 ( 1.60 ) Extremely thin / leadless package. Majority carrier conduction.

sanyo OS-CON sepc

Abstract: SANYO seqp marking code p42 SMD GAS SEPC 560 4 sanyo OS-CON sepc 100 16 10K 471 sanyo svpc series SEPC 560 6 16SVPF180M sanyo capacitors
Contextual Info: OS-CON INDEX Aluminum Solid Capacitors with Conductive Polymer Series integration OS-CON Line-up Guidelines and precautions for use Image of case size Products list Since the following models of the SVP and SVQP series have been integrated into models with a higher voltage

TVP06B15A

Contextual Info: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit.

Contextual Info: Comchip Schottky Barrier Rectifiers SMD Diode Specialist MBRF1030CT-G Thru. MBRF10100CT-G Voltage: 30 to 100 V Current: 10.0 A RoHS Device Features ITO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. 0.118 3.00

MBRF1030CT-G

Abstract: MBRF1040CT-G MBRF1045CT-G MBRF1050CT-G MBRF1060CT-G MBRF1080CT-G MBRF10100CT-G
Contextual Info: Comchip Schottky Barrier Rectifiers SMD Diode Specialist MBRF1030CT-G Thru. MBRF10100CT-G Voltage: 30 to 100 V Current: 10.0 A RoHS Device Features ITO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. 0.118 3.00

NCP6131

Abstract: 6TPE150MAZB 6TPG100M SANYO 2R5TPE470M7 2TPE470M6 6TPE220MAZB 2TPLF470M4E 25TQC5R6M 2TPLF470M6 2TPE470M7
Contextual Info: Capacitors General Catalog 2010-7 Aluminum Solid Capacitors with Conductive Polymer Tantalum Solid Capacitors with Conductive Polymer www.edc.sanyo.com Feature Feature Solid electrolytic capacitors with conductive polymer to meet the needs of all electronic equipments in the world

Contextual Info: SMD Schottky Barrier Rectifiers RB551V-30-HF I o = 500 mA V R = 20 Volts RoHS Device Halogen Free SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 )

Contextual Info: SMD Schottky Barrier Diodes RB551V-30 Io = 500 mA V R = 20 Volts RoHS Device SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 ) 0.047(1.20) 0.014 ( 0.35 )

RB551V-30

Contextual Info: SMD Schottky Barrier Diodes RB551V-30 Io = 500 mA V R = 20 Volts RoHS Device SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 ) 0.047(1.20) 0.014 ( 0.35 )

RB551V-30-HF

Contextual Info: SMD Schottky Barrier Rectifiers RB551V-30-HF I o = 500 mA V R = 20 Volts RoHS Device Halogen Free SOD-323 Features -Low reverse current. 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.055 ( 1.40 )

Contextual Info: SMD Transient Voltage Suppressor TVP04A6V8-G Thru. TVP04A601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power: 400 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.179(4.55) 0.161(4.10) -400W peak pulse power capability with a 10/1000 s

Contextual Info: SMD Transient Voltage Suppressor TVP04A6V8-G Thru. TVP04A601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power: 400 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.179(4.55) 0.161(4.10) -400W peak pulse power capability with a 10/1000 s