MBR2030CT Search Results

MBR 2010 OCT

Abstract: 2035CT 2040CT 2045CT 2050CT 2060CT MBR2030CT MBR2060CT MBR2030CT thru 2060CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR2030CT thru 2060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: MBR2030CTL Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)20

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR2030CT, 35CT, 40CT, 45CT, 50CT, 60CT TO-220 SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection

B2030

Abstract: B-2030
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact.

Contextual Info: MBR2030CT-MBR2060CT Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A TO-220AB 2.8± 0.1 Features High s urge capacity. 1.4± 0.2 Metal s ilicon junction, m ajority carrier conduction. 1 High current capacity, low forward voltage drop. 8.9± 0.2

2040ct

Abstract: 2035CT 2045ct 2050ct MBR2045CT equivalent MBR2050CT 2060CT MBR2030CT MBR2060CT MBR2030CT-MBR2045CT
Contextual Info: BL GALAXY ELECTRICAL MBR2030CT - - - MBR2060CT VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

MBR2060CT-G

Abstract: MBR20100CT-G
Contextual Info: Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

mbr20400

Contextual Info: Comchip SMD Schottky Barrier Rectifiers SMD Diode Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

MBR2060CT LITEON

Abstract: MBR2045CT/45 MBR2045CT LITEON MBR2035CT MBR2040CT MBR2045CT MBR2050CT MBR2060CT MBR2030CT
Contextual Info: MBR2030CT–MBR2060CT Vishay Lite–On Power Semiconductor 20A Schottky Barrier Rectifier Features D Schottky barrier chip D Guard ring die constuction for transient protection D Low power loss, high efficiency D High current capability and low forward voltage

MBR2045CT LITEON

Abstract: MBR2060CT LITEON C20150
Contextual Info: LITE-ON SEMICONDUCTOR MBR2030CT thru 2060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: MBR2030CT - MBR2060CT 20A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

204OCT

Abstract: 2060CT mbr204oct
Contextual Info: LITE'*] ?I SEMICONDUCTORS MBR2030CT thru 2060CT 20 VOLTAGE RANGE 3 0 to 6 0 Volts s CURRENT 20 Amperes AMPS. SCHOTTKY BARRIER RECTIFIERS FEATURES TO-22QCT • Plastic package has U / L • F la m m a b ility C lass ifica tio n 9 4 V - 0 • Exceeds e n v iro n m e n ta l standards o f M I L S 1 9 5 0 0

BR2060CT

Abstract: BR2045CT
Contextual Info: MBR2030CT-M BR2060CT Vishay Lite-On Power Semiconductor 20A Schottky Barrier Rectifier Features • • • • • • • Schottky barrier chip Guard ring die constuction for transient protection Low power loss, high efficiency High current capability and low forward voltage

Contextual Info: MBR2030CT - MBR2060CT 20A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

Contextual Info: MOSPEC MBR2030CT Thru MBR2060CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

MBR2015CTL

Abstract: B2015
Contextual Info: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA MBR2015CTL MBR2030CTL SWITCHMODE Dual Schottky Power Rectifiers MBR203QCTL is a Motorola Preferred Device . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal

mbr20400

Contextual Info: SMD Schottky Barrier Rectifiers SMD Diodes Specialist MBR2030CT-G Thru. MBR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.

2050CT

Abstract: 2045CT 2060CT 2035CT 2040CT MBR2030CT MBR2060CT
Contextual Info: MBR2030CT - MBR2060CT 20A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

Contextual Info: LITE-ON SEMICONDUCTOR MBR2030CT thru 2060CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

2045ct

Abstract: MBR2030C
Contextual Info: A dvanced 0257^0^ 0001735 T44 • P ow er T e c h n o lo g y • MBR2030CT thru MBR2060CT VOLTAGE RANGE 20 AMP -s B 30 to 60 Volts n SCHOTTKY BARRIER RECTIFIERS CURRENT 2 0 Amperes TO-220CT FEATURES • Plastic package has U/L Flam mability Classification 94V-0

45CT

Abstract: 50CT MBR20 MBR2030CT MBR2060CT
Contextual Info: MOSPEC MBR2030CT Thru MBR2060CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

b2030l

Abstract: MBR2030CTLG b2030lg SCHOTTKY BARRIER RECTIFIER aka B2030 MBR2030CTL
Contextual Info: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability

Contextual Info: MBR2030CT - MBR2060CT 20A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

B2030L

Abstract: B2030LG MBR2030CTLG MBR2030CTL SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR2030CTL SWITCHMODE Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 0.4 Max @ 10 A, TC = 150°C High Junction Temperature High dv/dt Capability