SMD DIODE MARKING V2 Search Results

smd transistor w1a

Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

smd code marking A8 diode

Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35

4N03L04

Abstract: iPP80n03S4L-04 4N03L03 4n03
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

ANPS071E

Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow

3pn1005

Abstract: IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80
Contextual Info: IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 4.8 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

4N03L04

Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

4N03L03

Abstract: 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd
Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

C3206

Abstract: H4 SMD IPB80N04S3-H4 IPI80N04S3-H4 IPP80N04S3-H4 PG-TO263-3-2 3n04h
Contextual Info: IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

3N0403

Abstract: IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205
Contextual Info: IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

comparator circuit using LM358

Abstract: temperature control using lm358 lm358 smd SMD marking dc to dc converters schematic diagram with LM358 lm358 vco current source circuit diagram lm358 lm358 current monitor lm358 lm358n operational amplifier as summing amplifier
Contextual Info: LM158,LM258,LM2904,LM358 LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers Literature Number: SNOSBT3G LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain,

3N0406

Abstract: DD32 smd marking DD IPI80N04S3-06
Contextual Info: Preliminary Data Sheet IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 5.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1

2n08l07

Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN04L03

Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN08L07

Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
Contextual Info: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

VCO application Circuit using LM358

Abstract: LM258 lm358 smd dc to dc converters schematic diagram with LM358 lm358 current monitor analog to digital convert LM358 lm358 LM358 CROSS REFERENCE peak lm358 lm358 vco
Contextual Info: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single

lm358 smd

Abstract: LM2904 LM1458 CROSS REFERENCE LM358 pinout VCO application Circuit using LM358 LM358 comparator ic english LM258 LM358 oscillator lm358 vco IC OP AMP LM358N
Contextual Info: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single

3pn06l03

Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow

DIODE D29 -08

Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
Contextual Info: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow

smd marking code G16

Abstract: 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008
Contextual Info: IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3N06L06

Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow

marking CODE R SMD DIODE

Abstract: SP0000-87994 IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22
Contextual Info: IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 21.3 25 V mΩ A • MSL1 up to 260°C peak reflow

Contextual Info: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION

DIODE smd marking v2

Abstract: 1SV328
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV328 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=2.8 Typ. Low Series Resistance:rs=0.55 +0.1 2.6-0.1 1.0max (Typ.) 0.475 0.375 +0.05 0.1-0.02

3N06L05

Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
Contextual Info: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1