SMD DIODE MARKING 77 Search Results

3N0609

Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
Contextual Info: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2n0612

Abstract: smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172
Contextual Info: IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 11.7 77 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3N0609

Abstract: IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 diode marking code 77 3N060 3n06
Contextual Info: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

Diode SMA marking code ye

Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
Contextual Info: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

DIODE smd marking 702

Abstract: diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking
Contextual Info: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV50C110-G Thru. TV50C441-G Working Peak Reverse Voltage: 11 to 440 Volts Power Dissipation: 5000 Watts RoHS Device Features DO-214AB SMC -Glass passivated chip. -5000W peak pulse power capability with a

DIODE smd marking 821

Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology

SMD MARKING QG 6 PIN

Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

S4 42 DIODE

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

S4 42 DIODE

Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

marking code e1 smd

Abstract: schottky barrier double diode smd SOT363 smd code 22 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAS70-07S Schottky barrier double diode Product specification Supersedes data of 1998 Jul 10 2003 Apr 11 Philips Semiconductors Product specification Schottky barrier double diode BAS70-07S FEATURES

Contextual Info: MOSFET IC SMD Type P-Channel 20V DS MOSFET UI2321DS K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(ON) < 50m RDS(ON) < 65m 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 (VGS = -2.5V) +0.1 0.97-0.1 RDS(ON) < 120m (VGS = -10V)

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

smd diode marking 77

Abstract: smd diode "marking 77" marking 77 BAS70-07 Schottky diode low voltage smd marking ms diode smd 410
Contextual Info: Diodes SMD Type Schottky Barrier Double Diodes BAS70-07 Unit: mm Features Low forward voltage High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. Absolute Maximum Ratings Ta = 25 MAX Unit continuous reverse voltage

SOD87 footprint

Abstract: zener diode voltage list List of Zener diode sod87 diode snubber smd diode marking 77 Diode zener smd d8 philips zener diode smd glass diode sod-87
Contextual Info: SOD87 hermetically sealed, for rectifiers and voltage regulators surface-mount glass package Philips Semiconductors continues to lead the way in cuttingedge package options which meet demands for ever greater performance from continually smaller housings.With the

A18E smd

Abstract: A18E
Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2

BAS70-05

Abstract: BAS70-07 BAS70 BAS70-04 BAS70-06 SMD DIODE bas70
Contextual Info: Diodes SMD Type Schottky barrier double diodes BAS70 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High breakdown voltage 0.55 Low forward current 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Guard ring protected +0.05 0.1-0.01

JPP-95

Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Contextual Info: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit

MTI150W40GC

Abstract: smd diode g6 S4 44 DIODE SMD
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications

smd diode code g3

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode g5 smd diode g6 SMD MARKING CODE s4 starter/generator IF110 DIODE marking S4 06 SMD mosfet MARKING code TC
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications

Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2

PH 17G

Abstract: PH marking code str 40115 ph-17j PH17G st smd diode marking code DE ph-17g marking code PH 817 marking 122 PHILIPS ph-17m
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD17 series General purpose controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 26 1999 Nov 11 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers

zener smd marking GA

Abstract: S6 SMD zener diode Zener diode smd marking 07 5DL2CZ smd schottky diode s6 CMS11 CMS19 CMG03 marking h01 rf semiconductors
Contextual Info: 2008-8 PRODUCT GUIDE Small and Medium Diodes s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1. Diode Product Tree 3 2. Key Features 4 3. New Small & Medium Diodes 5 4. Selection Guide 6 5. Symbols, Terms and Definitions