SMD DIODE 819 Search Results

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600

MJI-25

Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

marking code R56 SMD Transistor

Abstract: smd transistor p5s marking code R52 SMD Transistor
Contextual Info: User's Guide SLUU335A – December 2008 – Revised January 2010 bq78PL114 8S EVM The PowerLAN 8S Evaluation Module EVM is a complete evaluation system for the bq78PL114 Battery Management Controller and bq76PL102 Dual-Cell Li-Ion Battery Monitor integrated circuits

40khz fsk transceiver

Abstract: PLL FSK DEMODULATOR TH7120 "application note" antenna 433.92 MHz Transceiver Power Amplifier Circuit garage door 300mhz transmitter circuits diagram RT-16 433.92 HC49 LQFP32 SFE10
Contextual Info: TH7120 27 to 930MHz FSK/FM/ASK Transceiver Features ! Single chip solution with only a few external components ! Stand-alone fixed-frequency user mode ! Programmable multi-channel user mode ! Low current consumption in active mode and very low standby current

C21445

Contextual Info: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH, Released for Lead Pb -free Solder Process, AEC-Q101 Released FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION

VSMB1940X01

Contextual Info: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power

Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω ≤ 200 ns trr IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings

DS99004

Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous

TEMD7000X01

Abstract: J-STD-051 TEMD7000
Contextual Info: TEMD7000X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23 • High photo sensitivity • High radiant sensitivity

Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

IXBH28N170

Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 60 A VCE sat = 3.5 V IXBH 28N170 IXBT 28N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

10N170

Abstract: BiMOSFET
Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: TEMD7100X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23 • High radiant sensitivity

ixgh40n60b2d1

Abstract: 40N60B2D1 40n60b QG SMD TRANS
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

LINFINITY LX8383A

Abstract: 3845b power supply 3845b 2842ad8 intel 965 motherboard circuit diagram UC2843D CS830 uc3842 switching power supply with 3843b IRF6345
Contextual Info: Automotive Products Guide INSTRUMENTATION - GAUGE DRIVERS GAUGES DRIVEN PART NUMBER MAJOR CS-289 1 CS-3750 1 CS-4101 1 CS-4102 1 CS-4121 1 CS-4172 1 CS-8190 1 CS-8191 1 INPUT MINOR FREQ. PWM SPI CURRENT • DRIVE METHOD 20 mA • • • 2 FEATURES OUTPUT

Varistor V471U

Abstract: v471u panasonic ZNR MOV znr V14 metal oxide varistor znr D471 TRANSISTOR equivalent znr varistor y znr v20 471 ZNR 471 V271U
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers D Series: V Type: ÒZNRÓ Transient/Surge Absorber, Series V, Type D is released through our continued research in ceramic material composition of ZnO varistor and manufacturing

TFDU4301

Abstract: spec RC5 extended TFDU4301-TT TFDU4301-TR3 TFDU4301-TR1 Infrared Transceiver
Contextual Info: TFDU4301 Vishay Semiconductors Infrared Transceiver Module SIR, 115.2 kbit/s for IrDA Applications FEATURES 20101 DESCRIPTION The TFDU4301 is a low profile (2.5 mm) infrared transceiver module. It is compliant to the latest IrDA® physical layer standard for fast infrared data communication, supporting

LM2575HVT-5.0 P

Abstract: lm2575t-5.0 p LM2575M-12 LM2575HVT LM2575 LM2575S-ADJ LM2575N-12 LM2575N-ADJ LM2575N smd transistor TO4 88
Contextual Info: LM1575/LM2575/LM2575HV SIMPLE SWITCHER 1A Step-Down Voltage Regulator General Description Features The LM2575 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 1A load with

P8563

Abstract: NXP 8563T 8563t PCF8563T PCF8563P 8563S
Contextual Info: PCF8563 Real-time clock/calendar Rev. 10 — 3 April 2012 Product data sheet 1. General description The PCF8563 is a CMOS1 Real-Time Clock RTC and calendar optimized for low power consumption. A programmable clock output, interrupt output, and voltage-low detector are

jfet j102

Abstract: SLUA372 tda 0470 bq78PL118EVM SLUA524 SLUU481 smd zener diode code z4 USB-TO-GPIO cell balance board users guide Advanced Gas Gauge Host Firmware Guide
Contextual Info: User's Guide SLUU474 – January 2011 bq78PL116EVM Evaluation Module The bq78PL116EVM Evaluation Module can assist users in evaluating the bq78PL116 PowerLAN Master Gateway Controller. Included in this document are discussions of the board and its operation, the

PEB 4165 T

Abstract: 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T
Contextual Info: Pr eli mi nar y Dat a Sh eet , DS1 , No v. 20 00 MuPP µC Multichannel Processor for POTS PEB 31666 Version 1.3 PEB 31664 Version 1.3 W ir e d C o m m u n i c a t io n N e v e r s t o p t h i n k i n g . Edition 2000-11-06 Published by Infineon Technologies AG,

real time clock calendar

Abstract: HVQFN16 PCF2123 TSSOP14
Contextual Info: PCF2123 SPI Real time clock/calendar Rev. 03 — 5 October 2010 Product data sheet 1. General description The PCF2123 is a CMOS1 Real-Time Clock RTC and calendar optimized for low power applications. Data is transferred serially via a Serial Peripheral Interface (SPI-bus) with a