IXGH22N50B Search Results

smd A1 t

Contextual Info: □ IXYS Preliminary data IXGH22N50B IXGH22N50BS HiPerFAST IGBT V CES 500 V 44 A 2.1 V 55 ns ^C 25 V C E(sat)typ ^fi(typ) TO-247 SMD* Symbol Test Conditions v v*C G R T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M£i 500 500 V V v v*G E M Continuous

IXGH22N50B

Abstract: IXGH22N50BU1 IXGH22N50BU1S smd diode 819 To-247 Jedec package outline
Contextual Info: Preliminary data TM HiP erF AST HiPerF erFAST with Diode IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S IGBT Combi P ac k Pac ack VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions Maximum Ratings VCES

Contextual Info: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30

IXGH22N50B

Abstract: IXGH22N50BS
Contextual Info: Preliminary data IXGH22N50B IXGH22N50BS HiP erF ASTTM IGBT HiPerF erFAST VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 500 500 V V VGES VGEM

Contextual Info: Preli mi nary data IXGH22N50B IXGH22N50BS HiPerFAST IGBT 500 V 44 A 2.1 V 55 ns v,E! 'e m CE sat typ ^fl(typ) TO-247SMD* Symbol Test Conditions VCES vCGR ^ = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES vGEM Continuous Transient ±20

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

Contextual Info: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous

Contextual Info: OIXYS HiPerFAST IGBT IXGH22N50B IXGH22N50BS v CES ^C 25 ^ C E ( s a t ) ty p ^fi(typ) 500 V 44 A 2.1 V 55 ns Preliminary data Sym bol Test Conditions V V ¥ CGR Tj = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M f i 500 5 00 V V v v’ C o n tin uous

IXGD40N60A

Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Contextual Info: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60

IXFd50n20

Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type

IXGH24N50B

Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Contextual Info: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500