SMD CODE P1D Search Results

Contextual Info: TGA4534-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4534SM 1201 MAL AC0753 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 17.7 – 19.7 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 21 dB TOI: 42.5 dBm at 23 dBm/tone

Contextual Info: TGA4534-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4534SM 1201 MAL AC0753 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 17.7 – 19.7 GHz Power: 34 dBm Psat, 33 dBm P1dB Gain: 21 dB TOI: 42.5 dBm at 23 dBm/tone

Contextual Info: TGA4535-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4535SM 1201 MAL AC0776 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 21.2 – 23.6 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 22 dB TOI: 40 dBm at 23 dBm/tone

Contextual Info: TGA4535-SM K-Band Power Amplifier Applications TriQuint • Point-to-Point Radio  K-band Sat-Com TGA4535SM 1201 MAL AC0776 28 lead 5x5mm QFN package 28 27 VREF Frequency Range: 21.2 – 23.6 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 22 dB TOI: 40 dBm at 23 dBm/tone

m04 SMD

Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
Contextual Info: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /

DS111120

Contextual Info: RFDA0026 RFDA0026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL Max Gain=32dB at 900MHz RF_IN 6 GND 7  High OIP3/P1dB=+40/23dBm  Single +5V Supply GND GND GND GND GND NC

hdr1x6

Contextual Info: RFDA0026 RFDA0026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL GND 7 8 Gain Control Range=31.5dB 0.5dB Step Size  High OIP3/P1dB=+40/23dBm  Single +5V Supply GND GND

PIC16F690 LED project

Abstract: sensor using PIC16f690 Humidity PIC PROJECT Humidity sensor project USING MICROCONTROLLER "power factor measurement" schematic PIC Microcontroller DS51594 HS1101LF application note PIC16F690 2 digit 7 segment display CA pin configuration for pic 16f690 PIC16F690 dip
Contextual Info: Humidity Sensor PICtail Demo Board User’s Guide 2005 Microchip Technology Inc. DS51594A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: User's Guide SNAU147 – July 2013 TPL5000EVM User's Guide 1 Introduction The Texas Instruments TPL5000EVM evaluation module EVM allows a designer to configure the delay timers of the TPL5000 and measure its very low current consumption. Moreover, the TPL5000EVM is

smd zener diode code DE

Abstract: ATC100B 4.7pf capacitor 100nf 63v amplifier MA-920 920 smd transistor 6 pin TRANSISTOR SMD CODE PA 75W SMD w50 smd transistor ceramic capacitor 100nF 50 p2 10K
Contextual Info: DB-960-70W 70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

smd transistor 2x

Abstract: 6 pin TRANSISTOR SMD CODE PA smd zener diode code DE TRANSISTOR SMD 2X zener diode 5v ATC100B capacitor c12 90 HYBRID 70 mhz smd p2 10K anaren 1304
Contextual Info: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

smd transistor P1D

Abstract: 1uf 500v capacitor zener diode 5v 75W SMD smd zener diode code DE SMD Transistor 30w w50 smd transistor W50 SMD SMD 1206 RESISTOR 0 OHMS capacitor 47k 500v
Contextual Info: DB-960-70W RF POWER AMPLIFIER using 2 x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

Contextual Info: DB-960-90W 90W / 26V / 925-960 MHz PA using 2x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY

operational amplifier power 1A

Contextual Info: TGA4533-SM K-Band Power Amplifier Applications • • Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features • • • • • • • • Functional Block Diagram 20 Frequency Range: 21.2 – 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

itw pancon

Contextual Info: RFDA0026 RFDA0026Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 700MHz TO 1035MHz, 6-BIT 0.5dB LSB CONTROL Max Gain=32dB at 900MHz RF_IN 6 GND 7 Gain Control Range=31.5dB 0.5dB Step Size  High OIP3/P1dB=+40/23dBm

smd zener diode code 20w

Abstract: DB-900-100W ceramic capacitor 100nF 50 63v rf amplifier 100w capacitor 100nf 63v PD57060s zener 20w smd diode 1w ATC100B capacitor smd gp 542
Contextual Info: DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over

smd zener diode code 20w

Abstract: rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B DB-900-100W XPD57060S
Contextual Info: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over

anaren 1304

Abstract: ATC100B 4.7pf W50 SMD PD57045S ATC100B DB-900-80W zener diode 5v PD57045 10k potentiometer 1206 smd resistor transistor smd code 404
Contextual Info: DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over

transistor smd nd 16

Abstract: PD57045S ATC100B DB-900-80W 1uf 500v capacitor xinger 226 smd capacitor transistor smd code 404
Contextual Info: DB-900-80W RF POWER AMPLIFIER using 2 x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

Contextual Info: TGA4537-SM 29 – 35 GHz 1W Power Amplifier Applications • Point-to-Point Radio • Ka-band Sat-Com 26 lead 5x5mm ACQFN package Product Features Functional Block Diagram Frequency Range: 29 – 35 GHz Power: 31 dBm Psat, 30 dBm P1dB Gain: 18 dB TOI: 39 dBm at 20 dBm/tone

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial