SMD CODE MARKING WLCSP 9 Search Results

WLCSP66

Abstract: PI0297 EIA-481-C EIA 481-C WLCSP64 WLCSP underfill WLCSP stencil design comintec onyx32 smd code marking wlcsp 9
Contextual Info: PI0297 Package Information Description of WLCSP for microcontrollers and recommendations for use Introduction This document describes the WLCSP wafer level chip size package , and provides recommendation on how to use it. Only WLCSP for microcontrollers are described herein.

TB451

Abstract: intersil standard part marking wlcsp inspection
Contextual Info: Technical Brief 451 PCB Assembly Guidelines for Intersil Wafer Level Chip Scale Package Devices Introduction SOLDER BALL: Sn/Ag/Cu There is an industry-wide trend towards using the smallest package possible for a given pin count. This is driven primarily by the handheld products market where the trend towards

crystal quartz 24mhz

Abstract: MARKING SMD IC CODE 8-pin SILEGO silego greenclk SILEGO 32.768 slg3 Quartz Crystal 32.768KHz Quartz Crystal 32.768KHz low profile 32FERRI NX2016AA
Contextual Info: Not for Distribution World’s Smallest Micropower 32.768kHz Portable Media Player Clock General Description Features The SLG3PMP122 uses a 24MHz crystal to provide one 24MHz clock output and one 32.768kHz clock output for portable media player devices. •

EIA standards 783

Abstract: smd diode order marking code stmicroelectronics EIA 481-C bulk id EIA standards 763 EIA 763 IEC-60286-3 WLCSP flip chip WLCSP stencil design st smd diode marking code
Contextual Info: AN1235 Application note IPAD 500 µm Flip Chip: package description and recommendations for use Introduction This document provides package and usage recomendation information for 500 µm pitch Flip Chips. For information on 400 µm Flip Chips, see Application note AN2348.

AN2348

Abstract: EIA standards 763 EIA 481-C flip chip bga 0,8 mm WLCSP stencil design EIA 763 Service Manual smd rework station WLCSP chip mount WLCSP flip chip BUT12
Contextual Info: AN2348 Application note IPAD 400 µm Flip Chip: package description and recommendations for use Introduction This document provides package and usage recomendation information for 400 µm pitch Flip Chips. For information on 500 µm Flip Chips, see Application note AN1235.

transistor SMD MOSFET 2033

Contextual Info: PCF8883 Capacitive touch/proximity switch with auto-calibration, large voltage operating range, and very low power consumption Rev. 4 — 17 March 2014 Product data sheet 1. General description The integrated circuit PCF8883 is a capacitive touch and proximity switch that uses a

DG3000

Contextual Info: Si8429DB Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 11.7 0.042 at VGS = - 2.5 V - 10.7 0.052 at VGS = - 1.8 V - 9.6 0.069 at VGS = - 1.5 V - 8.3 0.098 at VGS = - 1.2 V - 1.02

016b sot-23-5

Abstract: Marking 023A transistor marking 016b TRANSISTOR SMD MARKING CODE p1 MARKING CODE SMD IC sot 23-6 007B smd smd marking 022b R5323K R5323Z marking code EA SMD Transistor
Contextual Info: R5323x SERIES 150mA 2ch LDO REGULATOR NO.EA-089-0607 OUTLINE The R5323x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage

SI-8100D

Abstract: si8100 Si8100DB
Contextual Info: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si8100DB

Contextual Info: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

mark A15 sot-23-6

Contextual Info: R5326x SERIES Automatic Mode Shift 2ch 150mA LDO NO.EA-138-061102 OUTLINE The R5326x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, Typ. 5.5µA low supply current, and remarkably improved transient response compared with the conventional low supply current

R5323N046B

Abstract: TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 1v smd code marking wlcsp 9 R5323N047B transistor smd code 404
Contextual Info: R5323x SERIES 150mA Dual LDO REGULATOR NO.EA-089-071105 OUTLINE The R5323x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage

Contextual Info: Si8424CDB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a, e RDS(on) () Max. 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 Qg (Typ.) 25 nC

Contextual Info: Si8439DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. (A)a, e ID 0.025 at VGS = - 4.5 V - 9.2 0.030 at VGS = - 2.5 V - 8.4 0.037 at VGS = - 1.8 V - 7.6 0.061 at VGS = - 1.5 V - 5.9 0.125 at VGS = - 1.2 V

E 8439

Abstract: smd diode 74a 8439
Contextual Info: Si8439DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. (A)a, e ID 0.025 at VGS = - 4.5 V - 9.2 0.030 at VGS = - 2.5 V - 8.4 0.037 at VGS = - 1.8 V - 7.6 0.061 at VGS = - 1.5 V - 5.9 0.125 at VGS = - 1.2 V

st micro electronics top marking

Abstract: WLCSP stencil design st smd diode marking code smd diode order marking code stmicroelectronics VIA Technology st micro marking
Contextual Info: ESDAXLC4-1BF3 Single line extra low capacitance TVS Features • Stand-off voltage 3 V ■ Ultra low capacitance 0.3 pF on a wide frequency spectrum, 200 to 3000 MHz ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.36 mm max

R5326XXXXA

Abstract: r5326n001a R5326N R5326N006A grm219b31a SOT-23-6 marking 633 SOT-23-6 marking .633
Contextual Info: R5326x SERIES Automatic Mode Shift 2ch 150mA LDO NO.EA-138-070409 OUTLINE The R5326x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, Typ. 5.5µA low supply current, and remarkably improved transient response compared with the conventional low supply current

AEC-Q100

Abstract: PCF8576D TQFP64 TSSOP56 smd diode marking s30
Contextual Info: PCF8576D Universal LCD driver for low multiplex rates Rev. 08 — 19 March 2009 Product data sheet 1. General description The PCF8576D is a peripheral device which interfaces to almost any Liquid Crystal Display LCD with low multiplex rates. It generates the drive signals for any static or

Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21

Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET

Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET

Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21

Contextual Info: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance

Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier