SMD BR 17 Search Results

SMD15N05

Abstract: SMU15N05
Contextual Info: SMD/SMU15N05 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TOĆ251 D TOĆ252 G Drain connected to Tab G D S Top View Order Number: G SMD15N05 D S S Top View

SMD15N

Contextual Info: Tem ic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) Id3 (A) 50 0.10 15 TO-251 TO-252 o —im o FT] G D D rain connected to Tab S Ô Top View O rder Number: G SMD15N05

GSIB-5S

Abstract: E54214 EDF1yM EDF1yS TO-269AA GBPC12-35W MBXM g2sb
Contextual Info: Bridge Rectifiers Vishay Semiconductors IF AV (A) 0.5 0.9 1.0 1.5 2.0 3.0 4.0 TYPE V(BR) RANGE (V) PACKAGE DEVICE(1) (7) SOURCE (3) FAMILY MAX VF(5) @ IF (V) (A) MBxM G Mini-bridge MBM 200 - 600 1.0 0.4 MBxS G Mini-bridge (SMD) MBS (TO-269AA) 200 - 600 1.0

SMD15N05

Abstract: SMU15N05
Contextual Info: Tem ic SMD/SMU15N05 Semiconductors N-Channel Enhancement-Mode Transistors Product Summary V BR DSS 50 (V) IDa (A) r DS(on) ( ^ ) 0.10 15 TO-251 D O TO-252 o o TT Drain connected to Tab G D S Top View Order Number: SMD15N05 Ô s G D S Top View Order Number:

SMD15N05

Abstract: SMU15n05
Contextual Info: SMD/SMU15N05 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TO-251 D TO-252 G Drain connected to Tab G D S Top View S Order Number: G SMD15N05 D S N-Channel MOSFET Top View Order Number: SMU15N05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: Transistors IC SMD Type Product specification FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance. RCE sat 57mÙ at 3A.

npn smd 3a

Abstract: power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3

npn smd 3a

Abstract: SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance.

Contextual Info: SMD Type Product specification FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 20 Amp pulse current. 4 Low saturation voltage.

2n08l07

Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN04L03

Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN08L07

Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
Contextual Info: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

smd suppressor marking mx

Abstract: TV06B330K marking code smd ky smd marking KE tv06b100j smd marking KD S 1040 smd smd marking code je 84 marking code EY SMD smd marking KH
Contextual Info: COAICHII» SMD Transient Voltage Suppressor S M O D io d e s S p o c la lls t TV06B5V0-G Thru TV06B171-G Working Peak Reverse Voltage: 5.0 -170 Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA Ideal fo r surface m ount applications Easy pick and place

smd code YL 69

Abstract: yd 803 rohs smd marking Yd SMD CODE AQ wk 3 94v-0 zy 406 marking code SMD zg RX -2 -G smd AP 1510 A SMD CODE MARKING XG
Contextual Info: COAICHII» SMD Transient Voltage Suppressor S M O D io d e s S p o c la lls t TV04A5V0-G Thru TV04A171-G Working Peak Reverse Voltage: 5.0 -170 Volts Power Dissipation: 400 Watts RoHS Device Features DO-214AC SMA Ideal for surface mount applications Easy pick and place

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

PN06L05

Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated

capacitor 10uF/63V

Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Contextual Info: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated

PN08L07

Abstract: SMD MARKING "68A" ANPS071E SPB100N08S2L-07 SPP100N08S2L-07
Contextual Info: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 75 V 6.5 mΩ 100 A P- TO220 -3-1 • Avalanche rated

RGK 20/1

Abstract: sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic
Contextual Info: DISCRETE DEVICES AMS-174 INTERIM ISSUE Subject to change without notice May 9, 1997 DISCRETE TRANSISTORS, DIODES, and ARRAYS Index to Sanken Electronic Components . page 2 NPN Power Transistors . 4

ANPS071E

Abstract: IEC61249-2-21 SPB100N03S2-03 SPP100N03S2-03
Contextual Info: SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ 100 ID • Excellent Gate Charge x RDS(on) product (FOM) A P-TO263 -3 • Superior thermal resistance • 175°C operating temperature

110N06L

Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature

IEC61249-2-21

Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
Contextual Info: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature

IEC61249-2-21

Abstract: PG-TO220-3 070N06L
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature