JMSH0606AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 95A N-channel Power MOSFET in TO-252-3L package with 4.4 mΩ RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSL0606AUQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN3x3-8L package with 5.0 mΩ typical RDS(ON) at VGS = 10V, 6.0 mΩ at VGS = 4.5V, 59A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSL0606AG
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET in PDFN5x6-8L package with 4.0 mΩ RDS(ON) at 10V VGS, 97 A continuous drain current, low gate charge, and 100% UIS tested for power management and motor driving applications. |
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JMSL0606AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET with 4.0 mΩ RDS(ON) at VGS = 10V, 5.2 mΩ at VGS = 4.5V, 103 A continuous drain current, in PDFN5x6-8L package, AEC-Q101 qualified for automotive applications. |
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JMSL0606AU
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET with 52A continuous drain current, 5.0mΩ typical RDS(ON) at VGS = 10V, 31nC gate charge, in a PDFN3x3-8L package, suitable for power management and switching applications. |
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JMSH0606AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN5x6-8L package with 3.7 mΩ RDS(ON) at 10V VGS, 103A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0606AK
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Jiangsu JieJie Microelectronics Co Ltd
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60V 90A N-channel Power MOSFET with 4.4 mΩ RDS(ON) at 10V VGS, TO-252-3L package, suitable for power management, motor driving, and switching applications. |
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JMSH0606AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET with 3.7 mΩ RDS(ON) at 10V VGS, 98A continuous drain current, PDFN5x6-8L package, suitable for power management, motor driving, and switching applications in industrial and consumer systems. |
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JMSL0606AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET in TO-252-3L package with 4.6 mΩ typical RDS(ON) at 10 V VGS, 93 A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSL0606AP
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in SOP-8L package with 5.3 mΩ typical RDS(ON) at 10V VGS, 15A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSL0606AK
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in TO-252-3L package with 4.6 mΩ RDS(ON) at 10V VGS, 90A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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JMSL0606AGD
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel power MOSFET with 55A continuous drain current, 6.4mΩ RDS(ON) at VGS=10V, 32nC total gate charge, and 1.8Ω gate resistance in a PDFN5x6-8L package. |
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JMSH0606AU
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Jiangsu JieJie Microelectronics Co Ltd
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60 V, 62 A N-channel Power MOSFET in PDFN3x3-8L package with 4.6 mΩ typical RDS(ON) at 10 V VGS, featuring low gate charge and high avalanche energy rating for power management and motor driving applications. |
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JMSH0606AKQ
