SMD 752 TRANSISTOR Search Results

siemens sda

Contextual Info: SIEMENS ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases:

SDA 30C162

Abstract: 30C162 smd code A9 3 pin transistor transistor 313 smd gpl05 smd code book a7 transistor P-LCC-68-1 30C16 megatext P-SDIP-52-1
Contextual Info: ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases: 11.96

smd transistor marking A10

Abstract: smd transistor marking A6 SDA 30C162 smd transistor wc 30C162 TRANSISTOR SMD MARKING CODE 5b smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a6 SMD transistor MARKING CODE 312 diode smd marking BUF
Contextual Info: ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases: 11.96

30C162

Abstract: 12x10 character TRANSISTOR SMD MARKING CODE kh "character rom" siemens S43 SMD marking code AE SMD Transistor siemens flash smd marking KH 235L P-LCC-68-1
Contextual Info: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update

siemens sda

Abstract: SDA 30C162
Contextual Info: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update

ad 161 transistor

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

752 J 1600 V CAPACITOR

Abstract: 16N170 BiMOSFET
Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

transistor buz 104

Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package

transistor smd qh

Abstract: transistor book SDA 30C162
Contextual Info: SIEMENS ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases:

16N170

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

42N170

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

16N170A

Abstract: diode 22 161 smd
Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

transistor SMD t70

Abstract: BUZ104
Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V

PSMN004-25B

Abstract: PSMN004-25P
Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

PSMN004-25

Abstract: SOT404 channel p PSMN004-25B PSMN004-25P
Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

PSMN005-55B

Abstract: PSMN005-55P
Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

SMD marking code 55B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

SCR gate drive circuit

Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
Contextual Info: App. Notes Design Tips Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors

Contextual Info: BUZ 173 Infineon technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds to flDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 £2 TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current

smd transistor l32

Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
Contextual Info: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter

DT94-15

Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
Contextual Info: App. Notes Design Tips Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Revised Application Notes and Design Tips INT-936 Title (and topic, if necessary) Document# Pages Date The Do's and Don'ts of Using MOS-Gated Transistors