SMA428A Search Results

Contextual Info: SMA428A High Gain, Low Noise Amplifier PRELIMINARY DATA • HIGH GAIN Gp = 21 dB at 1.85 GHz • LOW NOISE FIGURE NF = 1.3 dB at 1.85 GHz • LOW CURRENT CONSUMPTION 5.9 mA • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 2.4-3 V • GAIN-STEP-MODE 36dB

IrL 1540 N

Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784
Contextual Info: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure

DCS1800

Abstract: GSM900 PCS1900 SMA428A SMA428ATR
Contextual Info: SMA428A High Gain, Low Noise Amplifier PRELIMINARY DATA • HIGH GAIN Gp = 21 dB at 1.85 GHz • LOW NOISE FIGURE NF = 1.3 dB at 1.85 GHz • LOW CURRENT CONSUMPTION 5.9 mA • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 2.4-3 V • GAIN-STEP-MODE 36dB

SOT323-6

Abstract: SOT323-6L
Contextual Info: SMA428A High Gain, Low Noise Amplifier PRELIMINARY DATA • HIGH GAIN Gp = 21 dB at 1.85 GHz • LOW NOISE FIGURE NF = 1.3 dB at 1.85 GHz • LOW CURRENT CONSUMPTION 5.9 mA • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 2.4-3 V • GAIN-STEP-MODE 36dB

an1721

Abstract: SMA428A SOT323-6 gp 940
Contextual Info: AN1721 APPLICATION NOTE AN LNA OPTIMIZED AT 900 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GSM Application f = 900 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.4 dB Gain 25 dB RLin 8.5 dB RLout

DCS1800

Abstract: GSM900 PCS1900 SMA428A SMA428ATR K1118
Contextual Info: SMA428A High Gain, Low Noise Amplifier PRELIMINARY DATA • HIGH GAIN Gp = 21 dB at 1.85 GHz • LOW NOISE FIGURE NF = 1.3 dB at 1.85 GHz • LOW CURRENT CONSUMPTION 5.9 mA • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 2.4-3 V • GAIN-STEP-MODE 36dB

SMA428A

Abstract: AN-1619
Contextual Info: AN1619 APPLICATION NOTE AN LNA OPTIMIZED FOR INPUT/OUTPUT RETURN LOSS AT 1.85GHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for DCS Application f = 1.85 GHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.55

Contextual Info: SMA428A High Gain, Low Noise Amplifier PRELIMINARY DATA • HIGH GAIN Gp = 21 dB at 1.85 GHz • LOW NOISE FIGURE NF = 1.3 dB at 1.85 GHz • LOW CURRENT CONSUMPTION 5.9 mA • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 2.4-3 V • GAIN-STEP-MODE 36dB

AN1674

Abstract: SMA428A
Contextual Info: AN1674 APPLICATION NOTE AN LNA OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.96GHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for PCS Application f = 1.96 GHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.38 dB Noise Figure

AN1614

Abstract: SMA428A
Contextual Info: AN1614 APPLICATION NOTE AN LNA OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.85GHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for DCS Application f = 1.85 GHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.4 dB

AN1614

Abstract: SMA428A T3236 SOT323-6
Contextual Info: AN1614 APPLICATION NOTE AN LNA OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.85GHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for DCS Application f = 1.85 GHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.4 dB

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi