SM704 Search Results

TB216

Contextual Info: Polyfet RF Devices TB216 Vds=28Vdc Idq=1.2A Efficiency at 50W=50% min SC202, SM704 Frequency=118-140 MHz Gain/Efficiency vs Frequency: VDS=28Vdc, Idq=1.2A 70% 32 30 60% 28 26 40% Gain 24 Efficiency 30% Pout fixed at 50W 22 20% 20 18 118 120 122 124 126 128

Contextual Info: polyfet rf devices SM704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SM704

Contextual Info: polyfet rf devices SM704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices SM704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

SM4023

Abstract: SM7022 sm2256 tansitor SM4043 SM3252 sm70-22 SM2103 sm0353 SM2-25-105MS
Contextual Info: TANSITOR T ype “S IT Conformai Coat Tantalum Chip Capacitors PRODUCT FEATURES • 0.22 to 330 uF • 2 to 50 Volts • -55 ° C t o +125° C Operation * . d vq — "i J ^ High Resistance to Moisture * Solder or Gold plated Terminations * Bulk or Tape & Reel Packaging

blf578

Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
Contextual Info: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月 ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこ れまでになく簡単に 『NXPの RF マニュアル 』 は、今日RF設計者向けに市場に出回っているレファレンス・ツー

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

sot-89 BV SMD TRANSISTOR MARKING CODE

Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ

SM704

Abstract: 01UF 22NH 33PF 470PF TB-152 TB152
Contextual Info: Tb-152 TB-152 Pin vs Pout Freq=140MHz Vds=28Vdc Idq=.8A 15.0 120 P1dB=90W 14.0 100 Pout 80 13.0 Gain 60 12.0 Gain in dB Pout in Watts Linear @30W 40 Efficiency @30W = 40% 11.0 20 10.0 1 2 3 4 5 Pin in Watts 6 7 8 9 10 TB-152 Freq vs Gain/Efficiency; VDS=28Vdc Idq=.8A

SM4043

Abstract: sm4023 SM0026 SM7022 R/buzzer sm4 tansitor
Contextual Info: TANSITOR ELECTRONICS, INC. TYPE “SM” Conformai Coated Tantalum Chip Capacitors • 0.1 to 330 uF • 2 to 50 Volts • -55°C to +125°C Operation • 2 Termination Styles • Bulk or Tape & Reel Packaging k - H —*l ELECTRICAL CHARACTERISTICS: Capacitance:

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by