SM 4C DIODE Search Results

SC26P

Abstract: SC12P sm 04 IPA75 sm 4500 SC19P
Contextual Info: 'Al'ACITOKS ELKCTROM« S fo r p o w er Snubber Capacitors & Modules SM series (Module for IGBT * Low-inductance & high-Q * Easy connecting eq u iva le n t circuit SM04 Type IG B T Diode rv c E S ] [V R R M ftoftrr] 600/150 600/10/0.05 Cap F] 1.5 V R /V P

SXG300G

Abstract: 40101B
Contextual Info: SXG80G BRIDGE RECTIFIER DATA b Three-Phase Diode Bridges UNIT TYPE Ipc amp» A .N T. T. w 1DC amps A .F Sm/s • FS M T. amps I* t A 2s 25 C 4 5°C T. 25°C 80 68 16 3 85 190 170 SXG120G 100 120 105 205 S X G 1 80G 180 160 205 205 205 SXG21OG 210 1 85 370

SM 4c diode

Contextual Info: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE U nit in mm V H F -U H F MIXER APPLICATION. • • • + 0 .3 4 5 - 0 -2 Small Package. Sm all Delta Forward Voltage : ¿V p = 20mV Sm all Delta Total Capacitance : ¿sCx = 0.15pF ÖÖ +I MCO M A X IM U M RATINGS Ta = 25°C

SM 4c diode

Abstract: diode RA 225 R Am tuning DIODE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilico n Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides sotid-state reliability in replacement of mechanical

Contextual Info: bSE D • bM27525 GG37S23 4Ö5 HNECE N E C ELECTRONICS INC LASER DIODE / NDL5071 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION ND L5071 is a 1 550 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O TD R . The DC-PBH

Contextual Info: Us-r? □ — Surface Mounting Device —K U type Super Fast Recovery Diode • M B - H im O U T L IN E D IM E N S IO N S DF10LC20U 200V 10A Jo • /// ■ ypwv-i1 R A TIN G S $ Ê Î!Î Î I ^ 5 e !Î& A b s o lu te Maxim um R a tin g s 15# @ ji Item Symbol

M/ST-10-

Contextual Info: DOUGLAS RANDALL, INC Reed Relays- Contact Data Common Specification, Series SG, SM, HP, HPG, HPCG OPERATING DATA Must Operate — 70% Nominal Must Release — 10% Nominal Maximum Voltage Form A & C — 200% Nominal Form B & Latch — 130% Nominal ENVIRONMENTAL DATA

DS75-08B

Contextual Info: |B B j J Rectifier Diodes Avalanche Diodes DS75 DSI75 DSA75 DSAI75 ^FRMS ^FAVM v¥ 1 .Anode vR R U . B R , r f n v’ R S M V on stud V V V 1 ^ •f- on stud - DS75-08B DS75-12B DSI75-08B DSI 75-12B 1300 1760 1950 1200 1600 1800* DSA75-12B DSA75-16B DSA75-18B

Contextual Info: MOTOROLA O rder this docum ent by M M VL3102T1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tlining Diode M M VL3102T1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

S60SC3ML

Abstract: SHINDENGEN DIODE
Contextual Info: v a 7 •y -o m Schottky Barrier Diode_ Twin Diode o u t l in e d im e n s io n s S60SC3ML Case : MTO-3P 30V 60A ÏS s • T j 15CTC • 1 6 V f = 0 .4 8 V •PnnsM ffl V v i à ï i* • S R B S •D C /D C z i y n - 9 mmm. f/ - u , o a « ü m •a«.

Diode Marking z3 SOT-23

Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
Contextual Info: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.

diodes ru 4c

Abstract: GH3F RU4A k 300 ru RU4AM gh-3f 4z marking MARKING 2AM diodes ru 1h
Contextual Info: l à ai m is LI M l l l l t k i c U S A H E r Fast Recovery Diodes D I ? ? 4 1 DDDD131 b | •Vrm:100~ 2000v bio:0.i~ 4.0A T - £> I ~ £? RU/GH/GU/RP/RS/RH R a t in g / Characteristics V r sm (V V rm (V ) lo (A ) RU 2M 450 400 RU 2A M 650 600 RU 2YX

Contextual Info: MARKTECH INT ERN AT IO NAL ~fl7 dF | 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R

74C86N

Contextual Info: February 1988 Semiconductor MM54C86/MM74C86 Quad 2-Input EXCLUSIVE-OR Gate General Description Features Em ploying co m plem entary M OS CMOS tra n sisto rs to achieve w ide pow e r supply operating range, low pow e r c o n ­ sum ption and high noise m argin th e se gates provide basic

TP801

Contextual Info: TP801 C 0 4 5 a ^ a ’y h + — : Outline Drawings K SCHOTTKY BARRIER DIODE 4^“ 132 -5 JL , g CD S Î !» 1-Z. 4 11* 0.4 0 2.7 2.54 .¿ s t : Features JEDEC Low V P EIAJ Super high speed sw itchin g. • I M t t « C « * « ftt t f t i l Connection Diagram

ht6026 decoder

Abstract: t60-26 t6026
Contextual Info: HOLTEK r r HT6026 Remote Control Encoder Features • • • • • • • O perating voltage: 4V~18V Low stan db y current Low power and high noise im m unity CM OS technology 39 difference codes • Two tran sm issio n w ords m inim um Built-in oscillator needs only 5% resistor

BC327

Abstract: BC328 BC337 BC338 C338 BC327-25
Contextual Info: Rating Symbol BC327 BC328 -2 5 Vdc -3 0 Vdc VcEO -4 5 Collector-Base Voltage v CBO -5 0 Emitter-Base Voltage Collector-Emitter Voltage Unit V ë BO -5 .0 Vdc Collector Current — Continuous 'c -8 0 0 mAdc Total Device Dissipation @ Ta = 25”C Derate above 25°C

Contextual Info: LM 63 LM63 +/-1C/+/-3C Accurate Remote Diode Digital Temperature Sensor withlntegrated Fan Control Texas In s t r u m e n t s Literature Number: SNAS190D t í December 2, 2010 LM 63 Sem iconductor 3 3D/33D A c cu ra te R em ote D iode Digital T e m p e ra tu re

AN-90

Abstract: MM54C86 MM74C86 74L10
Contextual Info: February 1988 MM54C86/MM74C86 Quad 2-Input EXCLUSIVE-OR Gate General Description Features Em ploying co m plem entary M OS CMOS tra n sisto rs to achieve w ide pow e r supply operating range, low pow e r c o n ­ sum ption and high noise m argin th e se gates provide basic

STTA106U

Contextual Info: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 1A V rrm 600V (typ) 20ns V f (max) 1.5V trr FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODEOPERATIONS : FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY

SMD marking code B21 diode

Abstract: SMD MARKING CODE b21 SMD diode W03 SMD W05 smd diode Coloured band marking code S 4.2B diode smd diode smd marking BBB SMD W05 77 DIODE smd marking Ak DT80
Contextual Info: rZ J £ SGS-THOM SON iM M i[L Œ « Q M (ê § T P U x x /S M T H D T x x TRISIL DISCRETE SOLUTION FOR ISDN PROTECTION FEATURES . UNDIRECTIONAL CROWBAR PROTECTION. • PEAK PULSE CURRENT : Ipp = 7 5 A , 1 0 /1 0 0 0 jis . ■ HOLDING CURRENT = 150mA. ■ BREAKDOWN VOLTAGE:

ZC825 SOT-23

Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

MSM5839GS

Abstract: 382O z80 9 digit 7 segment display code LCD module 80X2
Contextual Info: O K I Semiconductor MSM6262-01_ DOT MATRIX LCD CONTROLLER WITH 48-DOT COMMON DRIVER GENERAL DESCRIPTION The MSM6262GS is a dot matrix LCD controller which is fabricated by OKI's low power consumption CMOS silicon gate technology. In combination with 8 -bit microcontroller, the