SM 4C DIODE Search Results

SC26P

Abstract: SC12P sm 04 IPA75 sm 4500 SC19P
Contextual Info: 'Al'ACITOKS ELKCTROM« S fo r p o w er Snubber Capacitors & Modules SM series (Module for IGBT * Low-inductance & high-Q * Easy connecting eq u iva le n t circuit SM04 Type IG B T Diode rv c E S ] [V R R M ftoftrr] 600/150 600/10/0.05 Cap F] 1.5 V R /V P

SXG300G

Abstract: 40101B
Contextual Info: SXG80G BRIDGE RECTIFIER DATA b Three-Phase Diode Bridges UNIT TYPE Ipc amp» A .N T. T. w 1DC amps A .F Sm/s • FS M T. amps I* t A 2s 25 C 4 5°C T. 25°C 80 68 16 3 85 190 170 SXG120G 100 120 105 205 S X G 1 80G 180 160 205 205 205 SXG21OG 210 1 85 370

SM 4c diode

Contextual Info: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE U nit in mm V H F -U H F MIXER APPLICATION. • • • + 0 .3 4 5 - 0 -2 Small Package. Sm all Delta Forward Voltage : ¿V p = 20mV Sm all Delta Total Capacitance : ¿sCx = 0.15pF ÖÖ +I MCO M A X IM U M RATINGS Ta = 25°C

Contextual Info: bSE D • bM27525 GG37S23 4Ö5 HNECE N E C ELECTRONICS INC LASER DIODE / NDL5071 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION ND L5071 is a 1 550 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O TD R . The DC-PBH

DS75-08B

Contextual Info: |B B j J Rectifier Diodes Avalanche Diodes DS75 DSI75 DSA75 DSAI75 ^FRMS ^FAVM v¥ 1 .Anode vR R U . B R , r f n v’ R S M V on stud V V V 1 ^ •f- on stud - DS75-08B DS75-12B DSI75-08B DSI 75-12B 1300 1760 1950 1200 1600 1800* DSA75-12B DSA75-16B DSA75-18B

Contextual Info: MOTOROLA O rder this docum ent by M M VL3102T1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tlining Diode M M VL3102T1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical

Diode Marking z3 SOT-23

Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
Contextual Info: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.

Contextual Info: MARKTECH INT ERN AT IO NAL ~fl7 dF | 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R

CD4C1690

Abstract: CD48 powerex nd ASE grinding
Contextual Info: 1SE D POWEREX INC • 72=14^21 DDQ34fci3 T ■ T~X5-ZS m m am x CD4B C D 4C Powerex, Inc., HHIIs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode POW-R-BLOK Modules

TP801

Contextual Info: TP801 C 0 4 5 a ^ a ’y h + — : Outline Drawings K SCHOTTKY BARRIER DIODE 4^“ 132 -5 JL , g CD S Î !» 1-Z. 4 11* 0.4 0 2.7 2.54 .¿ s t : Features JEDEC Low V P EIAJ Super high speed sw itchin g. • I M t t « C « * « ftt t f t i l Connection Diagram

ht6026 decoder

Abstract: t60-26 t6026
Contextual Info: HOLTEK r r HT6026 Remote Control Encoder Features • • • • • • • O perating voltage: 4V~18V Low stan db y current Low power and high noise im m unity CM OS technology 39 difference codes • Two tran sm issio n w ords m inim um Built-in oscillator needs only 5% resistor

Contextual Info: LM 63 LM63 +/-1C/+/-3C Accurate Remote Diode Digital Temperature Sensor withlntegrated Fan Control Texas In s t r u m e n t s Literature Number: SNAS190D t í December 2, 2010 LM 63 Sem iconductor 3 3D/33D A c cu ra te R em ote D iode Digital T e m p e ra tu re

STTA106U

Contextual Info: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 1A V rrm 600V (typ) 20ns V f (max) 1.5V trr FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODEOPERATIONS : FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY

ZC825 SOT-23

Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C08 Quad 2-Input AND Gate protected from dam age due to static discharge by diode clam ps to V Cq and GND. General Description The M M 74C 08 em ploys co m plem entary M OS CMOS transistors to achieve w ide pow er supply operating range,

diode SKN molybdenum

Contextual Info: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3

E173874

Abstract: HFCT-5710LP 1300nm 1000BASE-LX AT24C01A HDMP-1646A HDMP-1687 HFBR-5710L HFCT-5710L HFCT-5710LP
Contextual Info: Agilent HFCT-5710L/LP Small Form Factor Pluggable LC Optical Transceivers Data Sheet Description The HFCT-5710L/LP Small Form Factor Pluggable LC optical transceiver is compliant with both the IEEE 802.3Z 1000BASE-LX and Small Form Factor Pluggable (SFP) MultiSource Agreement (MSA)

CDFP2-F14

Abstract: MARKING CODE 3Y 54LS125A GDFP1-F14 whs 73 3704C
Contextual Info: INCH-POUND MIL-M-38510/323D 14 July 2003 _ SUPERSEDING MIL-M-38510/323C 7 August 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, QUADRUPLE BUS BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON Inactive for new design after 18 April 1997.

Contextual Info: APT8030B2VR A dvanced P o w er Tec h n o lo g y* 800V 27A 0.300Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

MICROWAVE ASSOCIATES

Abstract: Signal Path Designer
Contextual Info: Overview PIN Diode RF Switches Shunt M ultithrow switches are difficult to realize using only shunt diodes. A band-limited shunt m ulti­ throw as shown in Figure 2c uses quarter-wave transm ission lines to give the “o ff’ arm a high input impedance at the common port to prevent

ZC821

Abstract: NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC820 ZC822
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICO N ION IM PLAN TED H YPERABRUPT TUNER D IO D ES Designed for use in HF, V H F and U HF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a sem iconductor doping technique enabling close control of doping and profile. Its

Contextual Info: QuickSwitch Products q s 34X383Q3 High Speed CMOS I« ,* 32 -P'* Pus Exchange Switches in MillipaQ™ FEATURES/BENEFITS DESCRIPTION • The QS34X383 provides four sets of eight high­ speed CMOS TTL-compatible bus switches. The low ON resistance 5Q . of the QS34X383 allows inputs

Contextual Info: TC74HC4316AP/AF PRELIMINARY Q UA D B I L A T E R A L SWITCH The TC74HC4316A is a high speed CMOS QUAD B IL A T E R A L SWITCH fabribcated with silicon gate C^MOS technology. It consists of four independant high speed switches capable of controlling either digital or analog sign als

header 3x2 sm

Abstract: MMBT2222A/SOT CY7C64603-52NC LM64 LM64EVAL MMBT3904 GPD-120
Contextual Info: 1 LM64 Evaluation Board User’s Guide Copyright 2003 National Semiconductor Corporation 1 2 Table of Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3, 4 2.0 Getting Started . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4